本研究主要分為兩部分，在第一個部分主要針對類鑽碳應用上的瓶頸加以改質，而第二部分則是發展新型的蒸鍍技術沉積不含氫之類鑽碳膜。類鑽碳（Diamond-like Carbon, DLC）膜有許多優良的性質，硬度高、絕緣、耐磨耗、熱導性佳、抗氧化、耐化學侵蝕等特性，因此已被廣泛應用在工業界上。然而，類鑽碳膜的應力過大及熱穩定性不佳，卻限制了其在高溫環境上的應用，因此本研究使用濺射輔助電漿化學氣相沉積法，以乙炔為碳源，並通入氬氣濺鍍矽靶材，且於低溫下沈積矽摻雜之類鑽碳膜，得到熱穩定性較佳且應力較低的膜。不過隨著矽添加的量越多，其硬度亦相對越低；在矽含量超過50﹪以上時，其應力僅0.48GPa且熱穩定性在空氣下可耐到600℃，此結果相較未摻雜矽之類鑽碳膜之應力為2.13GPa而熱穩定性在400℃以下來的更佳，不過硬度卻從18.6GPa下降到10.9GPa。本研究輔以SEM、TEM、IR、ESCA及拉曼光譜分析，探討矽含量的增加對鍵結結構改變之影響以及瞭解應力下降和熱穩定性上升之主要原因。
在第二個部分，本研究利用中空陰極電弧放電機制來製備不含氫之類鑽碳膜，探討不同陽極靶材設計對鍍膜性質的影響，發現使用改良式陽極靶材並在基板偏壓-250V時所沉基的膜有較高的sp3碳含量，而其硬度值可達到18.2GPa。此外，sp3碳含量越高其熱穩定性也越高。

The technology of modified diamond-like carbon (DLC) films by plasma enhanced chemical vapor deposition has been developed in this study. Besides, a novel technology to deposit hydrogen-free DLC films by particle-free hollow cathode arc discharge is also attempted. Diamond-like carbon films were employed for a variety of industry applications owing to their unique properties including high hardness, high dielectric constant, scratch resistance, excellent thermal conductivity, oxidation and chemical resistance, etc. However, the high compressive stress and poor thermal stability of DLC films limited their applications especially in high temperature conditions. As a result, we tried to improve thermal resistance of DLC films by incorporating a high concentration of silicon in the films. Acetylene was employed as the carbon source, and argon was used to sputter Si target for low temperature depositions. Low stress and thermally stable silicon-containing DLC films were deposited on the silicon wafer substrates. We found that the hardness decreased with increasing the concentration of silicon. When the atomic percent of silicon was higher than 50 %, the DLC films stress was only 0.48 GPa, and the films was stable up to 600℃, in comparison to the conventional undoped DLC films with a high stress of 2.13 GPa and thermal stability only below 400℃.However, the hardness was decreased from 18.6 GPa to 10.9 GPa when the atomic percent of silicon was increased from 0 % to 50 %.The nanostructures and bondings of the films were analyzed by SEM, TEM, FTIR, ESCA and Raman spectroscopy to study the structure-property relationship.
Hydrogen-free DLC films were also deposited by particle-free hollow cathode arc discharge. By employing a variety of anode target designs, we found that high sp3carbon nanostructures could be deposited at -250V substrate bias (ENI RPG50, bipolar pulse duty cycle 50% in 250 kHz), and the hardness of hydrogen-free DLC films was 18.2 GPa. High thermal stability was correlated with the high nanostructures containing a high concentration of sp3 carbon.

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