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研究生： 林正偉
Lin, Cheng-Wei
論文名稱： 氧化鋅-鋁多層膜之結構與光電特性研究
The Structure and Electro-optical Properties of ZnO/Al multilayers
指導教授： 黃榮俊
Huang, Rong-Jun
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程研究所
Institute of Electro-Optical Science and Engineering
論文出版年： 2004
畢業學年度： 92
語文別： 中文
論文頁數： 81
中文關鍵詞： 透明導電膜 、鋁 、氧化鋅
外文關鍵詞： ZnO, Al, TCO
相關次數： 點閱：57  下載：11 
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    • 　　氧化鋅是具有寬和直接能隙的半導體，其激發光的波長是屬於短波長，因此被廣泛地應用在光電材料方面。
    　　一般氧化鋅的電阻值偏高，其導電係數主要受制於氧空缺與鋅間隙原子，故氧化鋅之導電率及透光率深受製備參數所影響。
    　　本研究利用新穎奈米夾層技術製備氧化鋅透明導電膜，藉由改變少量鋁粒子摻雜方式探討AZO之透光率、導電率及結構上的變化。 第一階段以定量氧化鋅改變鋁顆粒大小來探討鋁粒子對氧化鋅光電性質及結構的影響。第二階段則固定前述試驗所得之最適鋁顆粒大小改變氧化鋅厚度，來製備同時具有最小片電阻及可見光穿透率之AZO薄膜並探討其結構變化。第三部分利用前述之實驗結果進行各不同溫度之退火處理，並探討退火所造成的效應。
    　　若摻雜Al的總量一定，以分散成多層Al膜摻雜的方式經
    200oC~400oC退火後將可有效的提升透光率及導電性。本實驗最佳樣品為總厚度720 Å之Al(0.56Å)/ZnO(40Å)多層膜，在經過400 oC退火後其片電阻可達209Ω/sq，可見光穿透率為95%。

    ZnO:Al (AZO) films were prepared by ion-beam sputtering from metallic aluminum and ZnO targets.We studied the structure and electro-optical properties of ZnO/Al multilayers(MLs) and subsequent annealing films.
    There are three major in this work.First,we study the structural and electro-optical properties of the ZnO/Al MLs by changing the Al layer thickness for a fixed ZnO layer thickness at 100Å.The best Al layer thickness(~0.56Å) is determined and used in the second part of experiments by varying the ZnO thickness for a fixed Al thickness. The electrical and optical properties as a function of ZnO and Al thickness are thus determined.For the last part of the experiments we study the annealing effect on the structural and electro-optical properties of ZnO/Al multilayers.
    The microstructure and properties of the resulting AZO thin films were examined by using X-ray diffractometry.The film resistivity,carrier mobility and concentration were examined by Hall effect measurement.
    The lowest sheet resistance obtained in this study was 209 Omega for the [Al(0.56Å)/ZnO(40Å)]18 multilayer with visible (550nm) transmittance of 95%, which was annealed at the substrate temperature of 400oC.

    第一章 序論 　§1-1前言………………………………………………………………1 　§1-2 ITO透明導電膜的主要應用……………………………………2 　§1-3 研究動機 ………………………………………………………2 第二章 文獻回顧與基礎理論 §2-1 ZnO薄膜特性簡介…………………………………………………5 　2-1-1 ZnO薄膜之製備方法……………………………………………5 　2-1-2 ZnO晶體構………………………………………………………6 　2-1-3 ZnO薄膜光學性…………………………………………………7 　2-1-4 ZnO薄膜電學性…………………………………………………8 §2-2 濺鍍理論與系統介 ……………………………………………9 　2-2-1 濺鍍理論………………………………………………………10 　2-2-2 薄膜沉積原理…………………………………………………15 §2-3 霍爾效應…………………………………………………………19 第三章 儀器介紹與實驗方法 §3-1 儀器介紹 ……………………………………………………… 27 　3-1-1 離子束濺鍍系統………………………………………………27 　3-1-2 退火系統………………………………………………………31 　3-1-3 X-ray繞射儀 …………………………………………………32 　3-1-4 電性量測………………………………………………………33 　3-1-5 光學量測………………………………………………………34 　3-1-6 膜厚測量………………………………………………………34 　3-1-7 霍爾效應量測…………………………………………………35 §3-2 實驗方法…………………………………………………………36 　3-2-1 實驗流程圖……………………………………………………36 　3-2-2 系統真空環境的準備…………………………………………37 　3-2-3 基板的準備……………………………………………………37 　3-2-4 材料準備………………………………………………………38 　3-2-5 樣品成長………………………………………………………38 　3-2-6 樣品量測………………………………………………………39 第四章 結果與討論 §4-1 改變Al厚度之Al/ZnO多層膜特性研究…………………………49 　4-1-1 結構分析………………………………………………………49 　4-1-2 光學性質………………………………………………………50 　4-1-3 電性性質………………………………………………………50 　4-1-4 熱處理對薄膜結構的影響……………………………………51 　4-1-5 熱處理對薄膜光學性質的影響………………………………51 　4-1-6 熱處理對薄膜電學性質的影響………………………………52 §4-2 改變ZnO厚度之Al/ZnO多層膜特性研究……………………… 54 　4-2-1 結構分析………………………………………………………54 　4-2-2 光學性質………………………………………………………54 　4-2-3 電性性質………………………………………………………55 　4-2-4 熱處理對薄膜結構的影響……………………………………55 　4-2-5 熱處理對薄膜光學性質的影響………………………………56 　4-2-6 熱處理對薄膜電學性質的影響………………………………56 第五章 結論 ……………………………………………………………74 參考文獻…………………………………………………………………75

    1.M.Miura,Jpn.J.Appl. Phys.,21 ,264 (1982)
    2.Yasuhiro Igasaki and Hiromi Saito , Thin Solid
    Films,199, 223-230(1991)
    3.Takashi Komaru et al.,Jpn. J. Appl.
    Phys.PartI,5796-5804,38(1999)
    4.A. V. Singh, R. M. Mehra, A. Wakahara and A.
    Yoshida, J.Appl. Phys.,396-399,93(2003)
    5.M. Joseph, H.Tabata and T.Kawai, Jpn. J. Appl. Phys.,L1205-1207, 38(1999)
    6.Hiroaki MATSUI, Hiromasa SAEKI, Hitoshi TABATA and Tomoji KAWAI,Jpn. J.Appl.Phys.,5494-5499,
    42(2003)
    7.T.Yamamoto et al.,Jpn. J.Appl. Phys.,L166-169,
    38(1999)
    8.D. C. Look, D. C. Reynolds,C. W. Litton, R. L. Jones,D. B. Eason and G.Cantwell, Appl. Phys. Lett.,1830-1832,81(2002)
    9.A.V.Singh et al., J.Appl. Phys.,396-399,93(2003)
    10.Deuk-Kyu Hwang, Kyu-Hyun Bang, Min-Chang Jeong and Jae-Min Myoung,J. Crystal Growth,449-455,
    254(2003)
    11.顧鴻壽,”光電平面面板顯示器基本概論”,p.181,
    91(2002)
    12.J. S.Kim, Thin Solid Films,133,217(1992)
    13.N.W. Emanetoglu, C.Gorla, Y. Liu, S.Liang, Y.Lu, Materials Science in Semiconductor Processing ,247.,3 (1999)
    14.F. Furusaki, J. Takahashi and K. Kodaira,J. of the Japan Ceramic Society,102,[2],200-205, (1994)
    15.F. Quaranta,A. Valentini, F.R. Rizzi, G. Gasamassima, J. Appl. Phys., 244.,74(1993)
    16.F.S.Mahmood, R.D. Gould, A.K.Hassan, H.M. Salih, Thin Solid Films ,376, 270 (1995)
    17.Mitsuyu T,Ono S, Wasa K. J Appl. Phys.,2464.,
    51(5) (1980)
    18.N. J. Janno, Thin Solid Films, 220,92,(1992)
    19.D.Jiles, Chapman & Hill,(1994)
    20.B.E.Semelius,K.F.Berggern,Z.C.Jin,I.Hamberg and
    C.G.Granqvist,Physical Review B,10244-10248,
    37[17](1998)
    21.A.Sarkar ,S.Ghosh, S.Chaudhury and A.K.Pal,Thin
    Solid Films,255-264,204(1991)
    22.E. Burstein, Phys. Rev. 93, 632 (1954)
    23.T. S. Moss, Proc. Phys. Soc. B 67,775 (1954)
    24.Y.Igasaki and H. Saito, Thin Solid Films ,223.,199 (1991)
    25.賴耿陽," IC 製程之濺射技術"，復漢出版社,(1997)
    26.E. S Shim et al., Appl. Surf. Sci., 474-476, 186(2002)
    27.H. Kashani,Journal of Material Science Letters,1043-1045,18 (1999)
    28.施敏, 半導體元件物理與製作技術,23-47,(1997)
    29.H.W. Lehmann and R. Widmer,Thin Solid Films,359-368,27(1975)
    30.E.L. Paradis and A.J. Shuskus,Thin Solid Films,131-141,38(1976)
    31.M.S. Wu, A. Azuma, T. Shiosaki, A.kawabata, IEEE Trans. Ultrasonics,442-445,36(1989)
    32.Walter Water and Sheng-Yuan Chu, Materials Letters,67-72,55(2002)
    33.Y. Yoshino, T. Makino,Y. Katayama and T.Hata, Vacuum,538-545,59(2000)
    34.Sugawara T, Shimono I, Tsujino J, Homma N, Fukuda H, JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, 111 (11): 831-836,NOV,(2003)
    35.Jeong SH, Kno S, Jung D, Lee SB, Boo JH, SURFACE & COATINGS TECHNOLOGY , 174: 187-192,SEP-OCT,(2003)
    36.Cho J, Yoon KH, Oh MS, Choi WK, JOURNAL OF THE
    ELECTROCHEMICAL SOCIETY , 150 (10): H225-H228,
    OCT,(2003)
    37.Agashe C, Kluth O, Schope G, Siekmann H, Hupkes J, Rech B,THIN SOLID FILMS,442 (1-2): 167-172 ,OCT 1 ,(2003)
    38.Kluth O, Schope G, Hupkes J, Agashe C, Muller J, Rech B,THIN SOLID FILMS ,442 (1-2): 80-85 ,OCT 1 (2003)
    39.Fang ZB, Wang YY, Peng XP, Liu XQ, Zhen CM,
    MATERIALS LETTERS ,57 (26-27): 4187-4190 ,SEP ,(2003)
    40.Das R, Ray S,JOURNAL OF PHYSICS D-APPLIED PHYSICS ,36 (2):152-155 ,JAN 21 ,(2003)
    41.Haga K, Suzuki T, Kashiwaba Y, Watanabe H, Zhang BP, Segawa Y,THIN SOLID FILMS,433 (1-2): 131-134 JUN ,2 ,(2003)
    42.Shan FK, Yu YS,THIN SOLID FILMS ,435 (1-2): 174-178 ,JUL 1, (2003)
    43.Schuler T, Aegerter MA,THIN SOLID FILMS ,351 (1-2): 125-131,AUG 30 ,(1999)
    44.Cooray NF, Kushiya K, Fujimaki A, Sugiyama I, Miura T,Okumura D, Sato M, Ooshita M, Yamase O,SOLAR ENERGY MATERIALS AND SOLAR CELLS,49
    (1-4): 291-297 ,DEC ,(1997)
    45.Jeong SH, Lee JW, Lee SB, Boo JH,THIN SOLID FILMS ,435 (1-2): 78-82 JUL 1,(2003)
    46.Kelly PJ, Zhou Y, Postill A,THIN SOLID FILMS ,426 (1-2): 111-116, FEB 24,(2003)
    47.Chang JF, Shen CC, Hon MH,CERAMICS INTERNATIONAL ,29 (3): 245-250, (2003)
    48.Du XL, Murakami M, Iwaki H, Ishitani Y, Yoshikawa A,JAPANESE JOURNAL OF APPLIED PHYSICS
    PART 2-LETTERS ,41 (10A): L1043-L1045 ,OCT 1 ,(2002)
    49.Fortunato E, Nunes P, Marques A, Costa D, Aguas H, Ferreira I, Costa MEV, Martins R,ADVANCED MATERIALS FORUM I KEY ENGINEERING MATERIALS ,230-2: 571-574 ,(2002)
    50.Fang GJJ, Li DJ, Yao BL,THIN SOLID FILMS ,418 (2): 156-162 ,OCT 15 ,(2002)
    51.G.H. Lee, Y. Yamamoto, M. Kourogi, M. Ohtsu, Thin Solid Films ,117., 386 ,(2001)
    52.D.H. Zhang, D.E. Brodie, Thin Solid Films , 95., 298 1994
    53.Ray S, Das R, Barua AK,SOLAR ENERGY MATERIALS AND SOLAR CELLS ,74 (1-4):387-392, OCT, (2002)
    53.Song DY, Aberle AG, Xia J,APPLIED SURFACE SCIENCE ,195 (1-4): 291-296 ,JUL 15,(2002)
    54.Chang JF, Kuo HH, Leu IC, Hon MH,SENSORS AND ACTUATORS B-CHEMICAL ,84 (2-3):258-264 ,MAY 15 ,(2002)
    55.Jayaraj MK, Antony A, Ramachandran M,BULLETIN OF MATERIALS SCIENCE ,25 (3):227-230, JUN,(2002)
    56.Song D, Widenborg P, Chin W, Aberle AG,SOLAR ENERGY MATERIALS AND SOLAR CELLS,73 (1): 1-20,
    MAY, (2002)
    57.Fortunato E, Nunes P, Marques A, Costa D, Aguas H, Ferreira I, Costa MEV,Godinho MH, Almeida PL,
    Borges JP, Martins R,SURFACE & COATINGS TECHNOLOGY ,151: 247-251, MAR 1 ,2002
    58.Fu EG, Zhuang DM, Zhang G, Hou YQ, Wu MS,RARE METAL MATERIALS AND ENGINEERING ,31: 523-527
    Suppl. 1 ,SEP ,(2002)
    59.Singh AV, Mehra RM, Buthrath N, Wakahara A, Yoshida A,JOURNAL OF APPLIED PHYSICS ,90 (11): 5661-5665 ,DEC 1 ,(2001)
    60.Fu EG, Zhuang DM, Zhang G, Yang WF, Zhao M,APPLIED SURFACE SCIENCE ,217 (1-4): 88-94 ,
    JUL 15 ,(2003)
    61.張榮芳,國立成功大學材料科學及工程學系博士論文,
    (2001)
    62.許伯涵,國立成功大學電機工程學系碩士論文,(2002)
    63.劉文岳,國立成功大學材料科學及工程學系碩士論文，(2000)
    64.蔡濱祥,國立成功大學材料科學及工程學系碩士論文,
    (1999 )
    65.鄭立專,國立成功大學物理系碩士論文,(1998)
    66.Nathan W. Schmidt, Thomas S. Totushek, William A. Kimes, David R. Callender,and James R. Doylea, JOURNAL OF APPLIED PHYSICS, 94,9,5514-5521,(2003)

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