本實驗首次利用分子束磊晶系統(Molecular Beam Epitaxy)在氧化鋁(0001)基板上製備鉍碲硒三元合金薄膜，由臨場高能量電子繞射儀(RHEED)與AFM判斷膜面平坦程度，從XRD顯示出合金薄膜呈現單晶C軸取向且隨比例變化繞射峰則有偏移的趨勢並利用Vegard’s law定量出合金原子比例，隨後界定出合金特殊結構比例其Te:Se為1:2與2:1，之後本論文將配合結構模型分析其物理特性；電性方面，嘗試比較不同的原子比列對於電性傳輸的影響可由變溫電阻量測圖發現有在低溫時有電性轉換的現象，而Bi2Te2Se擁有最高的電阻率，霍爾量測結果顯示合金薄膜均為n型且載子濃度約為1019左右，合金的拉曼光譜可以直接觀察到三種震盪模式，隨比例改變震盪峰呈現偏移的趨勢，因原子摻雜位置的不同使得A11g與E2g有震盪峰分裂的現象。

It’s the first time that the BiTeSe ternary alloys thin film is prepared on Al2O3(0001) substrate in this experiment, and the roughness is judged by RHEED and AMF. The XRD reveals that the thin film presents single crystalline (00c) of which the trend of diffraction peak shifts along with changing ratio and definite quantitative the ratio of with Vegard’s law. Then we can determinate the special structural proportion of atoms Te : Se is 1:2 and 2:1,its physical property will be analyzed through analysis structure model in this research. In terms of electrically, when comparing how the different ratio effect the transmission of electrical property, we found that the phenomenon of transfer occurs in low temperature and Bi2Te2Se has the highest resistivity. The result of Hall measurement shows that the film are all n-type and the concentration of carriers show almost 1019 . Furthermore, There are three vibration mode can be observed directly from the Raman spectrum of alloys, which presents the trend of shifting along with changing peak. It is resulted from that A11g and E2g have the phenomenon of splitting peak which is led by difference of the doping position.

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