本文研究了具有不同材料組成的抗性隨機存取記憶體（RRAM）元件的性能。第3章重點介紹了基於氧化鎂鎵材料的電阻式記憶體元件，首先探討氧化鎂及氧化鎵在不同濺鍍功率下的表現，可以發現不同比例有著有不同的特性，從單獨氧化鎂或氧化鎵表現出102開關比，經過共同濺鍍後獲得改善具有103的開關比與1.26 V操作電壓；接續我們探討不同限流對於記憶體元件的特性影響，發現加大限流能夠效的改善表現；最後我們探討不同上電極的傳導機制與其特性關係，發現銅具有最低電壓的表現。第4章探討了氧化鎂矽作為電阻式記憶體的新材料，在初始條件下就具有高開關比(104)，展示了其在改善元件性能方面的潛力。探討經由不同濺鍍通氧量，氧氧缺變化所造成的特性影響。以及不同主動層密度對導電絲形成的影響，進而改變電性表現，發現密度大的薄膜結構具有較大的開關比(105)與較大的操作電壓(2.72 V)。在第5章中，本研究深入探討了雙層氧化鎂矽電阻式記憶體元件的性能，並研究了密度梯度對其性能的影響。結果表明，雙層薄膜結構中，上層密度高，下層密度低的密度梯度可以達到最高的開關比(106)，最大的操作電壓(3.85 V)。

This study investigates the performance of resistive random access memory (RRAM) devices with different material compositions. Chapter 3 focuses on resistive memory devices based on magnesium gallium oxide (MgGaxOy) materials. Firstly, the performance of magnesium oxide (MgO) and gallium oxide (Ga2O3) at different sputtering powers is explored. It is observed that different ratios exhibit distinct characteristics, with MgO or Ga2O3 individually demonstrating an on/off ratio of 102. However, through co-sputtering, an improved on/off ratio of 103 and a set voltage of 3.19 V are achieved. The influence of different top electrode materials is also investigated, with copper (Cu) top electrode RRAM exhibiting good endurance for 103 cycles and a low set voltage of 1.53 V. Additionally, increasing the compliance current (Icc) from 1 mA to 5 mA enhances the on/off ratio from 102 to 104, with the set voltage ranging from 1.23 V to 1.96 V. Chapter 4 discusses MgSiO3 as a new material for resistive memory devices, showcasing its potential in improving device performance. The effects of different sputtering oxygen flow rates and resulting oxygen vacancy variations are examined. Moreover, the impact of different active layer densities on the formation of conductive filaments and electrical properties is explored. It is found that higher-density films exhibit higher on/off ratios of 105 and larger set voltages of 2.72 V. Lastly, Chapter 5 delves into the performance of bi-layer MgSiO3 RRAM devices and investigates the influence of density gradients on device performance. The results reveal that a density gradient with high top layer density and low bottom layer density achieves the highest on/off ratio of 106 and an acceptable set voltage of 3.85 V.

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