氧化鋅是一種具有直接寬能隙(3.37eV)的二六族化合物半導體，有相對較大的束縛能(60meV)，因此在室溫下相對穩定；此外，藉由間接借由摻雜相異元素，產生各異的光電以及結構上的特性。這些因素促使氧化鋅被廣泛應用於光電元件，表面聲波元件等方面。
本實驗中利用磁控射頻濺鍍法成長氧化鋅和銅的夾層結構，再施快速熱處理，使之彼此擴散，以成長為一摻銅之氧化鋅薄膜。之後，使用各種量測儀器去探討其特性。在本實驗中可發現，隨著不同的退火溫度參數，在晶體結構上以及鍵結型態上均有改變。光學性質和電性上有著顯著改變伴隨著能隙的增減。再藉由光激發光光譜儀的量測，來推論摻銅造成氧化鋅性質改變的原因。

ZnO is group II-IV compound semiconductor with wide direct bandgap for 3.37eV. A relative stable under room temperature is attributed to larger binding energy 60meV. In addition, different electrical, optical, and structural properties could be manufactured by doping various elements, contributing to a wide application on optoelectronic devices and surface acoustic devices, and so on.
A multilayer structure consists of ZnO and Cu by RF magnetron sputtering technique in this experiment. Both materials were inter-diffused by rapid thermal annealing. Afterwards, characteristics of films fabricated in this experiment were investigated. Crystalline as well as bonding state changes with different thermal parameters of post-annealing. Transformations on both optical and electrical were of a considerable magnitude along wth variation of bandgap. PL was also applied to infer the mechanism that doping of Cu in ZnO.

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