在本論文中，我們利用低壓有機金屬化學氣相沉積法成長及研製三種新穎砷化鎵材料系列之異質結構場效電晶體。實驗上，我們所研製的元件皆具有良好的直流、交流及高溫操作特性。而這些優點則是元件在無線微波通訊領域應用上所必須具備的基本要求。
首先，我們將反向平面原子摻雜供應層、量子井通道及n+型砷化鎵/p+型磷化銦鎵/n-型砷化鎵駝峰式閘極結構應用在一異質結構場效電晶體中，由於高的閘極位障及良好的載子侷限能力，元件具有低的漏電流及高的崩潰電壓。在室溫下，閘極長度為1微米時，元件兩端閘-汲極崩潰電壓為52 V，三端開路狀態汲-源極崩潰電壓為39.7 V，三端汲-源極操作電壓大於20 V而無大的漏電流產生，另一方面，元件在微波頻率領域及高溫環境下也顯示出良好的操作特性。
接著，在n+型砷化銦鎵/n型砷化鎵複合式摻雜通道異質結構場效電晶體中，我們利用縮減砷化銦鎵層的厚度以形成通道量子化效應，這可以增加砷化銦鎵通道層的有效能隙，而砷化鎵層則可以增進元件在高電場下之操作能力，因此可避免撞擊游離現象產生，包括漏電流、崩潰電壓、輸出電導、電壓增益及元件特性隨溫度上升而呈現劣化之缺點皆可有效的改善。
最後，我們研製一種磷化銦鎵/砷化銦鎵/砷化鎵雙層通道結構之擬晶性高電子移動率電晶體。使用雙層通道結構，可以分散因材料晶格不匹配所產生的應力，因此可以利用較厚且具有高銦含量的砷化銦鎵材料做為通道層，提昇閘極工作電壓擺幅及增加載子傳輸特性。此外，我們也利用上、中、下三層平面摻雜層做為載子供應層，這可以使在雙層通道結構內的載子更均勻分佈，增加元件的直流及交流線性度。

In this dissertation, three novel GaAs-based heterostructure field-effect transistors (HFETs), grown by a low-pressure metal organic chemical vapor deposition (LP-MOCVD), have been fabricated and investigated. Experimentally, all proposed devices show high performances in direct-current (dc), alternating-current (ac), and high-temperature operation. These advantages are the essential requirements for the microwave circuits applications.
First, an inverted δ-doped sheet as carrier supplier layer, quantum well channel, and n+-GaAs/p+-InGaP/n-GaAs camel-like gate structure are introduced to fabricate a novel HFET. Due to the high-barrier and good carrier confinement, the studied device shows low leakage current and high breakdown voltage. For a 1 μm gate length device, two-terminal gate-drain breakdown voltage of 52 V, three-terminal off-state drain-source breakdown voltage of 39.7 V, and drain-source operation voltage over 20 V with low leakage current are obtained at room temperature. Furthermore, the studied device also shows good microwave characteristics and high breakdown behaviors at high temperature environment.
Second, the n+-InGaAs/n-GaAs composite doped chanel HFET is fabricated. In the n+-InGaAs/n-GaAs composite doped chanel atructure, the narrow InGaAs layer is used to introduce the channel quantization effect. Thus, the effective energy-gap of InGaAs channel can be increased. In addition, the n-GaAs channel can improve the operation capability under higher electric field. Therefore, the impact ionization effect can be avoided. Also, device characteristics including leakage current, breakdown voltage, output conductance, and voltage gain are improved and show low degradations with increasing the temperature.
Finally, we fabricate an InGaP/InGaAs/GaAs double channel pseodomorphic high electron mobility transistor (PHEMT). Based on the use of double channel structure, the stress force induced by the lattice mismatch can be reduced. Therefore, the thicker and higher In mole fraction of InGaAs layer can be used. Good carrier transport properties and wide voltage swing are obtained. Besides, the employed top, middle, and bottom triple δ-doped sheets, as carrier supplier layers, cause the uniform distribution of carriers in double channel layers. Experimentally, good dc and ac linearity are obtained.

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