隨著晶片3D堆疊 (3D-Stacked Die)技術的蓬勃發展，為了在有限的空間裡，讓系統功能極大化，晶圓(Wafer)的薄化面臨更大的挑戰。由於晶圓尺寸從8吋(8 inch)提升到12吋(12 inch) ，故在封裝製程的研磨中，晶圓(Wafer)的平坦度(Flatness)及表面應力分佈將面臨更嚴苛的挑戰。若製程上控制不當則易造成破片(Breaking)，導致IC元件損壞及嚴重的成本損失。本次研究主要是針對現有的設備，在第一站研磨站就提升Die Strength ，以降低後製程所產生的Die Crack 。藉由研磨機工作台轉速與主軸轉速及進給速率，三者關係互相組合，找出對Die Strength 最大化的組合。此次利用的工具為田口實驗，藉由田口找出最佳化的組合。

With the 3D stacking packages (3D-Stacked Die) rapidly progressed and the need to utilize the limited space, maximize the system function, the wafer thinning will face even greater challenges. As wafer sizes increase from 8 inches to 12 inches , in grinding process, the wafer flatness and surface stress distribution will face more severe challenges . If inadequate control of the manufacturing process occurs, it is easy to cause fragmentation, IC component damage and lead to serious cost losses. This study focuses on existing factory equipment, the first station grinding station to enhance die strength, and to reduce post process resulted from die crack. Die strength is maximized by examining the grinding machine table speed ,the spindle speed the feed rate, and the relationship among each combination. Through the Taguchi experiment, the optimal combination of process condition is obtained.

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