本研究主要在分析掃描速度對電化學原子力顯微鏡所製作氧化線高度的影響以及在無攪拌下的非等向性濕蝕刻速率的探討。掃描速度對氧化線高度影響的方面，主要是探討氧化線高度、總氧化時間與掃描速度在電化學原子力顯微鏡氧化行為的關係。氧化線理論模型是以包含Cabrera-Mott靜態氧化理論做為基礎，並探討氧化線高度在不同掃描速度作用後的結果。至於無攪拌蝕刻部分，則是探討蝕刻液濃度、蝕刻溫度、總蝕刻時間與無攪拌下蝕刻速率的關係。蝕刻速率理論模型是以蝕刻離子的擴散行為與化學蝕刻反應機制為基礎，並分別探討蝕刻速率在蝕刻液濃度、蝕刻溫度、總蝕刻時間與有無攪拌等條件作用下的結果。接著分別針對兩個理論中影響氧化線高度與蝕刻速率的各個參數設計實驗，由實驗結果來歸納出各參數對於實驗結果的影響。
由實驗結果看來，相同直流電壓氧化的情況下，當掃描速度增加會使得氧化線的高度與寬度隨之減少，而且與理論結果較符合。無攪拌蝕刻部分，在20%KOH以及溫度50 的情況下，在初始蝕刻速率 與化學反應常數 時的蝕刻速率理論趨勢最符合實驗結果。當蝕刻液濃度與蝕刻溫度增加會使得蝕刻速率隨之增加。無攪拌的蝕刻速率隨時間的增加而遞減，但是攪拌的蝕刻速率幾乎變化不大，且維持在一範圍內。
由實驗與理論結果的比較，可得知掃描速度確實為影響氧化線尺寸的主要因素。無攪拌蝕刻速率的實驗結果也頗符合以擴散為基礎的理論。而且也證實經由攪拌的確能減少擴散對蝕刻速率的影響，不會有隨時間而遞減的現象。

Two main points of this study is to analyze how scanning velocity affects the height of oxide line fabricated by EC-AFM(Electrochemisty Atomic Force Microscope) oxidation. Another one is to analyze the anisotropic wet etching rate without stirring. We tries to find out the relation between oxide heights, total oxidation time and scanning velocity in EC-AFM oxidation. In this study, we derive the dynamic EC-AFM oxidation model basic on static EC-AFM oxidation which includes Cabrera-Mott oxidation theory and use it to discuss the height of oxide line under different scanning velocities from the EC-AFM oxidation behavior. We also tries to find out the relation between etchant concentration, etching temperature, total etching time and the anisotropic wet etching rate without stirring. In this study, the non-stirring etching rate model is basic on the diffusion of etchant ions and chemical reaction of etching. And use this model to discuss non-stirring etching rate under different etchant concentration, etching temperature and total etching time. Then we set up the experiments, and see how the experimental parameters affect the experimental results from the dynamic oxidation mechanism and anisotropic wet etch without stirring
For the same oxidation voltage the heights and widths of oxide line decrease when raising the scanning velocity. We also find out the error least under the highest scanning velocity. For wet etching without stirring the etching rate increase when raising etchant concentration or etching temperature. But the etching rate decreases accompany the etching time increasing.
Comparing the experimental and the theoretical results, it is concluded that scanning velocity does affect the size of oxide line from EC-AFM oxidation. The experimental results of non-stirring etching rate is quite fit the theory derive from diffusion.

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