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研究生： 戴覺非
Dai, Chueh-Fei
論文名稱： 使用金/F4-TCNQ/五環素結構提升有機薄膜電晶體的載子注入效率
Using Au/F4-TCNQ/Pentacene for Ohmic Contacts to Enhance Carrier Injection in Pentacene-Based OTFTs
指導教授： 王永和
Wang, Yeong-Her
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2010
畢業學年度： 98
語文別： 中文
論文頁數： 73
中文關鍵詞： 有機薄膜電晶體 、五環素 、F4-TCNQ 、通道電阻 、摻入層
外文關鍵詞： organic thin film transistors, pentacene, F4-TCNQ, contact resistance, insert layer
相關次數： 點閱：93  下載：1 
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    • 本論文將探討五環素有機薄膜電晶體主動層與源極/汲極電極之間導入F4-TCNQ緩衝層並以退火製程來最佳化元件特性。實驗結果顯示，當F4-TCNQ厚度為1 nm時，飽和電流、臨界電壓、載子遷移率和接觸電阻都能夠有最明顯的改善程度。經過退火製程的元件特性，與未經退火製程的元件比較，載子移動率從0.42 cm2/Vs 提升至1.08 cm2/Vs，最大飽和汲極電流從12 μA提升至30 μA，接觸電阻也從0.25 MΩ降低至0.11 MΩ。元件特性的提升可歸因於五環素薄膜與金之間的高注入能障得以排除，導致接觸電阻下降和有機薄膜電晶體通道電阻的減少，分別藉由接觸電阻量測與四點探針量測證實。

    In this study, the F4-TCNQ film inserted between pentacene and gold to improve the transistor performance has been presented.
    From the experimental results, the performance of the transistors in terms of the saturation current, mobility, threshold voltage, and contact resistance could be improved by inserting optimal 1nm-thick F4-TCNQ films. Through the post-annealing process, the mobility of device with pentacene/F4-TCNQ/Au contact could be further improved from 0.42 cm2/Vs to 1.08 cm2/Vs, the maximum saturation current also increased from 12 μA to 30 μA, while the contact resistance decreased from 0.25 MΩ to 0.11 MΩ, as compared to those without post-annealing. The enhancement in device performance could be ascribed the reduction of contact resistance resulting from the elimination of large injection barrier height at pentacene/Au interface and lowering of the channel resistance, as confirmed by the transmission line method (TLM) and four point probe measurement, respectively.

    目錄 第一章 緒論 1 1.1 背景與發展 1 1.2有機半導體材料 2 1.3研究動機 4 1.4論文架構 5 第二章 有機薄膜電晶體的操作 6 2.1有機材料的電荷傳輸 6 2.1.1 Hopping 6 2.1.2 Multiple Trapping and Release 8 2.2 元件結構與操作模式 9 2.2.1 元件結構 9 2.2.2 操作原理 10 2.3 有機薄膜電晶體的重要參數 12 2.3.1 載子移動率 12 2.3.2 臨界電壓 13 2.3.3 次臨限擺幅 14 2.3.4 開關電流比 14 2.3.5 接觸電阻 15 第三章 實驗設備與流程 16 3.1儀器設備 16 3.1.1 實驗設備 16 3.1.2 實驗材料 16 3.2 實驗流程 19 3.2.1 玻璃基板清潔程序 19 3.2.2 金屬鋁的製作 19 3.2.4 主動層的製作 20 3.2.5 緩衝層的製作 20 第四章 結果與討論 22 4.1 以不同厚度的F4-TCNQ薄膜層對元件效應的影響 22 4.1.1 元件電性分析 22 4.1.2 四點探針量測 24 4.1.3 接觸電阻量測 25 4.1.4 原子力顯微鏡(Atomic force microscope) 25 4.2 F4-TCNQ薄膜在不同厚度之下經過退火製程對元件電性之效應 26 4.2.1 元件電性分析 26 4.2.2 四點探針量測 27 4.2.3 接觸電阻量測 28 4.2.4 原子力顯微鏡(Atomic force microscope) 28 4.2.5 總結 29 第五章 結論 30 表目錄 Table 3.1 the structure parameters of the device. 36 Table 4.1 Comparisons of the device performance with different F4-TCNQ thickness. 36 Table 4.2 Comparisons of the device performance (with and without annealing) with different F4-TCNQ thickness. 37 圖目錄 Figure1.1 Chemical structures of polythiophene, poly(3-hexythiophene), phthalocyanine (M=metal), C60, and hexadecafluorocopperphthalocyanine (F16CuPc). 38 Figure 1.2 Chemical structures of (a) pentacene, (b) PDPA, (c) PDDA, and (d) naphthalene tetracarboxylic dianhydride. 39 Figure 2.1 Bottom gate structure OTFTs. 40 Figure 2.2 Top gate structure OTFTs. 41 Figure 2.3(a) P-type OTFTs energy level diagram. 42 Figure 2.3(b) N-type OTFTs energy level diagram. 43 (b) Poly melamine-co-formaldehhyde, methylated (PMF) 44 Figure 3.1 Chemical structures of PVP, PMF and PGMEA. 45 Figure 3.2 Chemical structures of pentacene and F4-TCNQ. 45 Figure 3.3 Gate electrode pattern mask. 46 Figure 3.4 Active layer pattern mask. 46 Figure 3.5 Source and Drain electrodes pattern mask. 47 Figure 3.6 The flow chart of device formation 48 Figure 4.12 ID-VDS characteristic of device with 1 nm F4-TCNQ layer. 49 Figure 4.13 ID-VDS characteristic of device with 2 nm F4-TCNQ layer. 50 Figure 4.14 ID-VDS characteristic of device with 3 nm F4-TCNQ layer. 50 Figure 4.15 ID-VDS characteristic of device with 4 nm F4-TCNQ layer. 51 Figure 4.16 characteristic of device without F4-TCNQ layer. 51 Figure 4.17 characteristic of device with 1 nm F4-TCNQ layer. 52 Figure 4.18 characteristic of device with 2 nm F4-TCNQ layer. 52 Figure 4.19 characteristic of device with 3 nm F4-TCNQ layer. 53 Figure 4.20 characteristic of device with 4 nm F4-TCNQ layer. 53 Figure 4.21 Field effect mobility of device with F4-TCNQ thickness. 54 Figure 4.22 ID and VTH of device varying with F4-TCNQ thickness. 55 Figure 4.24 Sheet resistance of varying with F4-TCNQ thickness. 56 Figure 4.25 Total resistances versus channel length of device without F4-TCNQ. 56 Figure 4.26 Total resistances versus channel length of device with F4-TCNQ 1nm. 57 Figure 4.28 3D AFM image (1 nm F4-TCNQ coated Pentacene). 58 Figure 4.29 2D AFM image (2 nm F4-TCNQ coated Pentacene). 58 Figure 4.30 3D AFM image (2 nm F4-TCNQ coated Pentacene). 59 Figure 4.31 2D AFM image (3 nm F4-TCNQ coated Pentacene). 59 Figure 4.32 3D AFM image (3 nm F4-TCNQ coated Pentacene). 60 Figure 4.33 2D AFM image (4 nm F4-TCNQ coated Pentacene). 60 Figure 4.34 3D AFM image (4 nm F4-TCNQ coated Pentacene). 61 Figure 4.37 ID-VDS characteristic of device with annealing 2 nm F4-TCNQ layer. 62 Figure 4.39 ID-VDS characteristic of device with annealing 4 nm F4-TCNQ layer. 63 Figure 4.45 Field effect mobility of device varying with annealing F4-TCNQ thickness. 66 Figure 4.46 Total resistances versus channel length of device without annealing. 67 Figure 4.47 Total resistances versus channel length of device with annealing. 67 Figure 4.48 Sheet resistance of varying with annealing F4-TCNQ thickness. 68 Figure 4.49 2D AFM image (1 nm annealed F4-TCNQ coated Pentacene). 69 Figure 4.50 3D AFM image (1 nm annealed F4-TCNQ coated Pentacene). 69 Figure 4.51 2D AFM image (2 nm annealed F4-TCNQ coated Pentacene). 70 Figure 4.52 3D AFM image (2 nm annealed F4-TCNQ coated Pentacene). 70 Figure 4.53 2D AFM image (3 nm annealed F4-TCNQ coated Pentacene). 71 Figure 4.54 3D AFM image (3 nm annealed F4-TCNQ coated Pentacene). 71 Figure 4.55 2D AFM image (4 nm F4-TCNQ coated Pentacene). 72 Figure 4.56 3D AFM image (4 nm annealed F4-TCNQ coated Pentacene). 72 Figure 4.57 Comparisons of the device mobility (with and without annealing) different F4-TCNQ thickness. 73 Figure 4.58 Comparisons of the device threshold voltage (with and without annealing) different F4-TCNQ thickness. 73

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