在本論文中，圖形化之基板是以黃光微影與乾蝕刻方式來製作，根據高解析度X光繞射光譜之半高寬與穿透式電子顯微鏡之結果顯示，以圖形化藍寶石基板製作之氮化鎵磊晶層，其穿透差排密度可明顯的降低，室溫下20 mA之輸出功率與外部量子效率，對於有/無圖形化基板分別為11.24/8.89 mW與20.85/ 16.49%。此外，可發現有圖形化基板之接面溫度與熱阻均比較小。
對於發光二極體的應用，有一些情況將影響到元件的可靠度，例如靜電放電。在本論文中，利用一個金屬-氧化物-半導體(金氧半)電容器並聯到氮化銦鎵發光二極體，藉以達到較高的靜電放電保護，藉由此法，靜電保護電壓可由200 V提升到1900 V左右其靜電防護平均大約增加了6至7倍左右。
在增加元件發光效率方面，分別利用增加光取出效率與內部量子效率等方式。就光取出效率方式而言，當在成長p型氮化鋁鎵電子阻障層時，改變三甲基鎵的流量由10增加到60 sccm，此時其對應的V/III比將由2600降低到433，其縱向成長速率將大於側向成長速率，即可得到粗糙的氮化鋁鎵表面，進而增加p型氮化鎵層表面的粗糙度，藉由此方法，其輸出功率對流量分別為10、20、40與60 sccm的三甲基鎵是15.4、15.9、17.5與18.9 mW，其60 sccm的外部量子效率大約比10 sccm增加34.8%。
此外對於內部量子效率的提升，利用一個應力釋放層同時搭配在其間摻雜適量的矽。這個超晶格結構的氮化銦鎵/氮化鎵應力釋放層被加入在n型氮化鎵與多重量子井層之間，波長的藍移可以從10減少到2.5 nm，同時發現電激發光之強度也增加了，為了改善光特性，一個適當的矽摻雜被加入到應力釋放層中的阻障層，此阻障層能隙被往下拉，形成一個電洞阻障層，將電洞侷限在多重量子井層內，以增加電子電洞對的複合機率，藉由此方法，可以發現輸出功率增加了25%達到18.7 mW。
另外，爲改善因基板本身絕緣特性所造成的電流擁擠效應，一個電子阻障層被引入在n型氮化鎵層與多重量子井層之間，藉由電子阻障層的使用，可以發現到因為有均勻的側向電流分散效果，其內部量子效率明顯被增加。使用電子阻障層，其輸出功率約可增加13%，此外在可靠度方面，有使用與沒使用電子阻障層，其輸出功率衰減的趨勢是一樣的，這說明採用電子阻障層的方式，不但沒因此而減低元件的可靠度，反而有助於輸出功率的增加。
在白光元件製作方面，一個製作完成的氮化銦鎵發光二極體結合兩種混合物質，也就是混合DBPPV與硒化鎘/硫化鋅量子點而發出白光。利用此法，當DBPPV與量子點的膜厚達到0.61 μm時，其白光色度座標為(0.33, 0.36)，當厚度進一步增加時，其白光色度座標變化到(0.43, 0.46)。使用混合DBPPV與硒化鎘/硫化鋅量子點的方式，其發光光譜顯示有超過90%的藍光有效轉化成綠光及紅光。

In this dissertation, patterned sapphire substrates (PSS) are fabricated using photolithography and dry etching. The crystalline quality of GaN epilayer was estimated via high-resolution X-ray diffraction and transmission electron microscopy. According to the results, the dislocation densities of GaN epilayer grown on the PSS were lower than that of on the conventional sapphire substrates (CSS). When the LEDs were operated at an injection current of 20 mA at room temperature, the output power and external quantum efficiency were estimated to be 11.2/8.9 mW and 20.9/16.5% for PSS and CSS, respectively. In addition, the PSS owns smaller junction temperature and thermal resistance compare with the CSS.
Sometimes, the reliability will suffer a few problems in the actual application such as electrostatic discharge (ESD). In this study, an InGaN-based LED combined with a metal-oxide semiconductor (MOS) capacitor has been fabricated for high ESD protection. Using this method, a level of defense against the ESD is significantly strengthened from 200 to 1900 V of human body model, which corresponds to 6- to 7-fold enhancement in the ESD robustness of LEDs.
High light extraction efficiency and high internal quantum efficiency are adopted in order to enhance the luminous efficiency. For the high light extraction efficiency, different trimethylgallium flow rates (RTMGa) are using during the growth of p-AlGaN epilayer to facilitate a rougher p-GaN surface. The V/III ratio is decreased from 2600 to 433 with increasing RTMGa from 10 to 60 sccm to enhance vertical growth rate, resulting in the rough p-AlGaN surface. The output power of devices biased at 20 mA is 15.4, 15.9, 17.5, and 18.9 mW for RTMGa of 10, 20, 40, and 60 sccm, respectively. The external quantum efficiency of 60 sccm is 34.8 %, which corresponds to 23 % enhancement in the light output power compare to that with RTMGa of 10 sccm.
A strain relief layer (SRL) with proper Si doping is introduced in terms of the enhancement in the internal quantum efficiency. A superlattice structure of In0.08Ga0.92N/GaN SRL is grown between n-GaN and multiple quantum wells (MQWs). The blue-shift is reduced from 10 to 2.5 nm. Moreover, the electroluminescence intensity of LEDs with SRL is higher than that of LEDs without SRL. A proper Si-doped layer is simultaneously introduced in the SRL as a hole blocking layer in order to enhance the recombination probability of electron-hole pairs. It can be found that the output power is increased more than 25% for Si doping in the SRL.
In order to improve the current crowding effect doe to the insulating nature of the substrate, electron barrier layer (EBL) is introduced between n-GaN and MQWs. By means of EBL, it was found that the internal quantum efficiency can be increased due to the uniform lateral current spreading. It was found that the output power could be increased over 13% for LED with EBL. In addition, the trends in the reduction in the output power of LEDs with and without EBL were almost the same for the reliability test. It indicates that the employment of EBL is not only without reducing the reliability but also enhancing the output power.
For achieving white light emission, synthesized red-emitting CdSe/ZnS QDs in combination with the green-emitting DBPPV were dually hybridized on the blue InGaN LEDs. With a polymer/QD composite film thickness of 0.61 μm, the Commission Internationale de l’Eclairage chromaticity coordinates of the emitting light from the device attain (0.33, 0.36), and the correlated color temperature is about 5300 K. The coordinates are shifted to (0.43, 0.46) as the thickness is further increased to 0.87μm. Meanwhile, the luminescence spectrum shows that more than 90% of the blue light is effectively energy transferred to green and red lights.

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