當材料尺寸降至奈米尺度時，原子級的缺陷效應則不可忽視；以差排為例，其插入規則排列的晶格時所誘發之彈性應變場，將改變鄰近晶體的局部結構與材料性質，而該缺陷可透過繞射圖譜之變化觀測。故本研究旨在探討差排所造成之晶格變形與 EBSD 菊池圖譜變化之關聯性，以差排理論作為出發點，分析差排周圍原子的位移行為以建立變形晶體結構，並進一步生成對應的變形菊池圖譜，再系統性比較原始圖譜與變形圖譜的菊池帶寬度、菊池帶位移與區域軸位移等差異。建立一套由「原子位移晶格變形－菊池圖譜變化」之分析架構。
結果顯示，菊池帶寬度可透過晶面間距變化進行預測，而菊池帶位移則與晶面法向量旋轉密切相關。此外，區域軸位移則可透過晶軸方向結合球面投影(gnomonic projection)進行預測，且其位移量與相對於 Pattern Center 之位置高度相關。整體結果顯示，利用晶體結構變化能有效預測繞射圖譜之改變，有助於未來利用繞射圖譜快速判別晶體缺陷與結構變形行為，並可作為建立缺陷圖譜資料庫與自動化辨識方法之基礎。

The study investigates the relationship between strain-induced dislocation and changes in electron backscatter diffraction (EBSD) Kikuchi patterns. Based on classical dislocation theory and Molecular dynamics (MD), atomic displacements around a dislocation were analyzed to construct deformed crystal structures and simulate the corresponding Kikuchi patterns. The results show that Kikuchi band width and displacement can be predicted from changes in interplanar spacing and plane normal directions, respectively. Zone axis displacement can also be predicted from crystallographic direction changes combined with gnomonic projection and is strongly dependent on its position relative to the Pattern Center. These results establish a framework linking atomic displacement, lattice deformation, and Kikuchi pattern variation.

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