本研究使用新型的商用in-line PECVD低溫(< 300oC)沉積SiNx:H抗反射層，並且以網板印刷方式製作高效率太陽電池。
　　主要討論不同製程氣體比例(NH3/SiH4)與基板溫度之下所沉積SiNx薄膜的品質。依序利用AFM討論SiNx表面粗糙度，FTIR光譜分析元素鍵結強度，SIMS縱深分布圖討論元素的移動。也分析SiNx折射率反射率等光學特性。最後應用於商業型結晶矽太陽電池。
　　研究結果顯示氣體比例(NH3/SiH4)對SiNx的光學特性有著很重要的影響。而基板溫度不同也會影響SiNx薄膜元素的組成。這也影響了對矽基板鈍化的效果。
　　在太陽電池抗反射層應用上，我們分析以不同氣體比例，在不同溫度下製作出的太陽電池的效率。最後我們找出最佳沉基溫度，以減少支出的熱預算。

　　In this thesis, we use the newest commercial in-line PECVD to deposit SiNx:H antireflective coating layer in low temperature (< 300oC). And finish the contacts of solar cells by high throughput screen printing.
　　The main discussion is the quality of SiNx which is grown in different gas ratio (NH3/SiH4) and substrate temperature. We use AFM to obtain the roughness of the SiNx surface, FTIR spectrum to analysis the bonding of elements, SIMS to achieve the depth distribution of the film. Then, we measure optical characteristic of the SiNx film, for example, the refractive index and the reflectance. Finally, we make the application for commercial crystalline silicon solar cell.
　　From the results, gas ratio (NH3/SiH4) influences the optical characteristics of SiNx seriously. The compositions of SiNx films are not the same in the different substrate temperature. It also affects the passivation for silicon wafer.
　　We deposit SiNx antireflective coating layer in different gas ratio (NH3/SiH4) and substrate temperature for solar cells. After compiling efficiency data, we find the optimum substrate temperature to reduce the thermal budget.

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