我們研究了(TixZr80-x)Ni20準晶和非晶的形成與電傳輸特性研究。準晶樣品是用銅模吸鑄法(Copper mould suction casting)而非晶樣品是用銅滾輪淬熄法(Melt-spun method)所製成。我們發現這兩種樣品在室溫的電阻率皆在150 µΩ-cm以上，而且隨著溫度下降有上升的趨勢。他們的電阻溫度係數皆為負值，這樣的現象都能以弱局域化和電子-電子交互作用來解釋。

(TixZr80-x)Ni20準晶樣品在4.2 K 的電阻率大約是在228〜298µΩ-cm，比非晶樣品在4.2 K的電阻率156〜207 µΩ-cm稍大些。準晶樣品的電阻率比較大的原因可能是因為準晶存有一個膺位能(pseudo gap)，且準晶的特殊結構使電子有局域化的傾向。

我們也發現當(TixZr80-x)Ni20準晶樣品在常溫下經過兩年老化(aging)，在低溫的電阻率會下降。透過X光繞射分析，顯示老化的樣品有α-Ti(Zr)雜相的產生，推測(TixZr80-x)Ni20準晶不是一個穩定的狀態。

In this work we study the formation and electrical transport properties of quasicrystalline and amorphous (TixZr80-x)Ni20 alloys. The former were prepared by means of copper mould suction casting, while the latter prepared by melt-spun method. We found the resistivity of both series of alloys at room temperature is above 150 µΩ-cm and rises with decreasing temperature. And the negative temperature coefficient of the resistivity could be explained by both effects of the weak localization and electron and electron interactions.

The resistivity of the studied (TixZr80-x)Ni20 at 4.2 K in quasicrystalline state is around 228〜298 µΩ-cm, which is larger than 156〜207 µΩ-cm observed in amorphous state. The larger value of resistivity in quasicrystals is possibly mainly due to the existence of the pseudogap and the tendency of the localization of the electrons resulting from the quasicrystalline structure.

We also found the resistivity of (TixZr80-x)Ni20 quasicrystals aged for two years at room temperature drops at low temperature. The x-ray diffraction reveals that the aged samples include the precipitate of α-Ti(Zr) impurity phase. This suggests that (TixZr80-x)Ni20 quasicrystals are not stable ones.

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