隨著平面顯示器產業的快速發展，薄膜電晶體的設計及改良頓成為重要課題。目前廣為應用的非晶矽薄膜電晶體雖然可以大面積且低溫均勻成長，但驅動電流較低是其最大的缺點。近來積極研究的複晶矽薄膜電晶體雖擁有大驅動電流，但其需高溫製程不利於玻璃基版上成長，而低溫複晶矽於大面積製作時其均勻度也是個考驗；雖然目前也有發展低溫成長複晶矽電晶體的技術，如金屬誘發橫向成長結晶或利用準分子雷射回火，但卻因此使製程多了一道回火的步驟。於是吾人利用PECVD疊層氫原子化學回火技術(簡稱疊層氫化技術)所成長的奈米矽鍺薄膜不但可以大幅提升其載子遷移率進而提升驅動電流，而且具有目前非晶矽薄膜技術的優點可以低溫(250℃)下大面積成長。

本論文研究利用疊層氫化技術成長奈米矽及奈米矽鍺薄膜。其中11層氫化技術成長的奈米矽薄膜霍爾遷移率為13.7 cm2/V.s及56％的結晶度，而15層氫化技術成長的奈米矽鍺薄膜不但霍爾遷移率可以達到125 cm2/V.s且結晶度更高達96.63％。此兩者的特性皆比非晶矽薄膜佳，尤其是奈米矽鍺薄膜更好。此外吾人更利用Fe-SEM，Raman spectrum，Photoluminescence spectrum，AFM來檢測奈米矽與奈米矽鍺薄膜的材料物理及光學特性。

Thin film transistors (TFTs) have been employed to drive and address each pixel in the flat panel displays. Amorphous TFTs have advantages of low temperature and simple deposition, but also possess the drawback of poor current driving ability. For the time being, poly-silicon TFTs are widely studied for their high mobility, but high fabricate temperature and non-uniformity are still the problems for production, on the other hand, the low temperature poly-silicon (LTPS) TFTs such as metal induced lateral crystallization (MILC), excimer laser annealing (ELA) even can be prepared at low temperature, however, these LTPS need extra annealing thus the process becomes more complicate.

In this thesis, we present a novel method of layer-by-layer hydrogen chemical annealing (HCA) to deposit the nc-Si and nco-SiGe thin films. This method is not only effective but also compatible to the amorphous TFTs technology. The 11 layers HCA nc-Si film reaches the mobility of 13.7cm2/V.s and crystalline volume fraction of 56％, while the 15 layers HCA nc-SiGe film has the mobility of 125 cm2/V.s and crystalline volume fraction of 96.63％. Both of the nano films have higher mobility over amorphous silicon thin films especially the nc-SiGe, and are uniformly deposited at low temperature (250℃). Additionally, we examine the physical and optical characteristics of the nano films by Fe-SEM, PL spectrum, Raman spectrum and AFM.

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