高介電常數材料如鈦酸鍶鋇 ((Ba,Sr)TiO3, BST)作為薄膜電容元件運用之研究已受到廣泛的注意。氮化鋁鈦薄膜則是擴散阻障層相當好的選擇。離子束濺鍍法的優點有製程溫度低，可以減少對基板之熱影響，其離子源沒有電漿體與靶材或鍍膜反應所造成之污染問題。另外其鍍膜速率低，相對於其它鍍膜技術可以得到緻密且表面平整之鍍膜，可望藉此改善元件電性表現。本研究以離子束濺鍍法製備鈦酸鍶鋇/氮化鋁鈦薄膜，進行薄膜製程研究及評估氮化鋁鈦兼作為鈦酸鍶鋇薄膜電容之底電極和擴散阻障層的可行性。氮化鋁鈦薄膜使用鈦鋁合金靶通氮氣之反應式濺鍍，實驗探討基板溫度、離子束電壓、氮氣分壓對於氮化鋁鈦薄膜之導電性、抗氧化與擴散阻障特性之影響。鈦酸鍶鋇薄膜由(Ba0.5Sr0.5)TiO3陶瓷靶濺鍍，鍍膜過程改變基板溫度、氧氣分壓以及熱處理溫度與氣氛，最後以薄膜性質分析結果及薄膜電容之漏電特性作為評估依據。

原子堆積密度較高的結晶面以及良好的結晶性有助於氮化鋁鈦薄膜傳導電荷，薄膜之粗糙度與鋁含量則會影響抗氧化能力。實驗結果顯示隨著基板溫度、離子束電壓與氮氣分壓的變化直接或間接影嚮了吸附粒子之移動力，進而改變鍍膜之結晶性與從優取向，因此影響鍍膜之導電性。抗氧化能力方面，較低的基板溫度下，濺鍍之氮化鋁鈦薄膜粗糙度較低，且薄膜中之鋁含量較高，並因此有較佳的抗氧化能力。濺鍍粒子之動能隨離子束電壓增加而增加，過高的能量造成再濺射效應發生率提高。再濺射使得粗糙度增加，並且高能量的濺鍍粒子撞擊下可能伴隨鍍膜表面損傷，將提供氧化反應位置，粗糙度增加本身也會使得薄膜容易發生氧化現象。鈦鋁合金靶在不同的氮分壓下氮化比例不同，隨著氮分壓變化鍍膜中的鋁含量會因著靶材上不同粒子的濺鍍率而改變，在高的氮氣分壓下濺鍍得到之薄膜有較低的鋁含量，抗氧化能力因此而劣化。

氮化鋁鈦對於鈦酸鍶鋇之組成元素的阻擴散能力相當優良，氧化是由界面侵入之氧引起之側向氧化現象。氮化鈦鋁氧化生成之氮氣造成鈦酸鍶鋇/氮化鋁鈦結構的損壞，這可能是因為在多層膜的結構下，生成之氮氣累積在鈦酸鍶鋇與氮化鋁鈦之界面，從而造成鍍層剝離與水泡狀之微結構。熱處理後電容結構之破孔產生之應力來源可能有熱膨脹係數差異、側向氧化引起之體積變化以及氮氣釋出現象，鈦鋁金屬黏著層有助於強化多層膜之界面減少熱處理後電容結構之破孔產生，因此使得漏電流得到大幅度降低。氧氣氛中濺鍍之鈦酸鍶鋇呈等軸狀之奈米晶粒結構，且在鈦酸鍶鋇/氮化鋁鈦界面處得到鋁氧化物或鈦氧化物之中介層，等軸狀之奈米晶粒結構以及該中介層亦進一步減少漏電流。

Barium strontium titanate [(Ba,Sr)TiO3] (BST) has been shown to be a suitable dielectric layer in thin film capacitors, whilst TiAlN is a strong candidate for the barrier layer material. Thin films may be deposited using ion beam sputter deposition (IBSD). The advantages of this method include a relatively low processing temperature and hence fewer thermal effects on the substrate, avoidance of contamination and interaction between plasma and target or substrate, and, since the deposition rate of IBSD is low, a smooth morphology and dense structure of the deposited film, beneficial to the electrical properties of thin film capacitors. This work focus on the study of BST/TiAlN thin film process using IBSD and evaluation of the potential of TiAlN functioned as a diffusion barrier and a bottom electrode in a BST capacitor. We deposited TiAlN by a TiAl target with nitrogen as reactive gas. The effects of substrate temperature, ion beam voltage and nitrogen partial pressure on the resistivity, oxidation resistance and diffusion barrier properties of TiAlN films were studied. The BST film was deposited by a (Ba0.5Sr0.5)TiO3 target and the effects of substrate temperature, oxygen partial pressure, annealing temperature and annealing atmosphere were studied. The evaluation is based on the thin film properties and leakage of capacitor.

The performance of films was affected by the crystalline plane, density and crystallinity, which affect electrical resistivity, the roughness and Al content, which affect oxidation resistance, and these are related to the mobility of adatoms on the substrate, which is itself affected by substrate temperature, ion beam voltage and nitrogen partial pressure. TiAlN films deposited at lower temperatures were smoother and had a higher Al content, making them more stable under an oxygen atmosphere. The kinetic energy of sputtered particles increased with increasing ion beam voltage and the resputtering of film occurred when the kinetic energy of sputtered particles was too high. Resputtering caused higher film roughness and the surface damage caused by bombarding of energetic particles created sites that easily reacted with oxygen. The degree of nitridation of the TiAl target differed with the nitrogen partial pressure and hence so did the sputtered yield of different species on the target: the Al content of the films was lower at higher nitrogen partial pressure and because of this the oxidation resistance of the film was low.

TiAlN proved to be a good diffusion barrier against the components of BST films. The "lateral oxidation" of TiAlN was caused by the diffusion of oxygen from the interface. This damage to the stacking structure was caused by N2 gas generated in the oxidation reaction of the TiAlN film accumulating at the interface between BST and TiAlN, resulting in the formation and peeling off of blisters at the interface. Holes in the stacking structure of BST/TiAlN after annealing were caused by differences in coefficient of thermal expansion, volume increase from the oxidation reaction and nitrogen out-gassing. However, the adhesion layer TiAl effectively reduced the generation of holes by improving the interface strength, noticeably reducing current leakage. The BST film structure, deposited in an oxygen atmosphere, was nanocrystalline equiaxial in type. In addition, an insulating oxide interlayer, having high breakdown field strength, was formed at the BST/TiAlN interface. These structures further resulted in a lower level of current leakage.

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