本研究主要討論，在MOCVD(有機化學氣像沉澱)反應器中各種流速對流動特性的影響。目前兩個最被廣泛使用的反應器將會在本研究中介紹，而其中之一的反應器，可被視為平行MOCVD反應器的集合體。因此，我們將會模擬一個以平行反應器為基礎的模型，作為對MOCVD反應器之特性研究的依據。而在我們模擬的過程中，兩個不同的非線性求解器將被使用，也將會討論此兩求解器的特性以及效率。在本文最後，速度固定但不同壓力下的反應器之模擬結果，以及固定壓力但不同速度下之模擬結果將被比較以及討論。

Presented is an investigation into the influence of various flow rates on flow features within a MOCVD (Metal-Organic Chemical Vapor Deposition) reactor. Two most commonly used reactors designs are introduced, with one of these generally regarded as an aggregate of a horizontal reactor. Based on this, we employ a simple test reactor geometry commonly used for MOCVD research and develop simulation models for the modelling of the flow and chemical reaction process within. A variety of solvers are investigated for the given governing equations, including two different non-linear solvers, with the methods and efficiency of these solvers discussed in brief detail. The outcome of the simulations demonstrate that the flowrate of type III and type V gas flows through the reactor plays a key role in the location of the production of the target molecule for deposition (based on TMGA-type MOCVD) and where flow speeds are too high, the rate of reaction is low enough that the uniformity on the wafer is impacted.

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