本篇研究利用低熔點鎵金屬實現高可靠度之銅對銅接合結構，以解決傳統接合手法所面 臨的高溫接合晶圓翹取以及介金屬化合物所造成的可靠度問題。利用聲化學手法將液態鎵金 屬製備成次微米粒子，搭配介面活性劑五氟苯硫酚進行粒子殼層改質，提升粒子抗氧化能力， 減薄氧化鎵殼層厚度以提升接合面金屬擴散效能，並透過漿料轉移系統找出最佳參數，達成 精準定量鎵粒子的轉移總量，應用於銅對銅接合系統。此研究搭配工業級鍍鎳系統，利用電 鍍、無電鍍、濺鍍三種手法，製備 50 到 800 奈米厚的鎳度層，解析不同鎳製程及鎳厚度對於 接合系統的影響。化鍍鎳系統接合成功率低，歸因於非晶結構與表面雜質影響。濺鍍鎳呈現 柱結構，熱壓接合過程中液態鎵滲透進柱狀鎳之間的孔隙，達底層與銅基板相互擴散，然而 由於銅鎵之間的高擴散速率使得銅基板在界面處產生巨大孔洞，影響剪切強度與可靠度。電 鍍鎳系統與鎵粒子的搭配經過 10MPA 300 度的熱壓接合展示出最優異的剪切強度達 3.89MPa， 高溫保存以及 TCT 的可靠度測試則呈現剪切強度上升的趨勢，印證鎵粒子應用於銅對銅電子 構裝系統的的巨大潛力。

This research utilizes low melting point gallium metal to achieve high reliability copper-tocopper bonding structure to solve the reliability problems caused by high temperature bonding wafer warpage and intermetallic compounds faced by traditional bonding methods. The liquid gallium metal is prepared into submicron particles by sonochemical method, and the particle shell is modified with the surfactant pentafluorothiophenol to improve the anti-oxidation ability of the particles. The material transfer system using spin coating method finds the best parameters to achieve accurate quantification of the total amount of gallium particles transferred, which is applied to the copper-tocopper bonding system. This study is equipped with an industrial-grade nickel plating system, using three methods of electroplating, electroless plating, and sputtering to prepare a nickel layer with a thickness of 50 to 800 nm, and analyze the influence of different nickel processes and nickel thickness on the bonding system. The low bonding success rate of electroless nickel plating system is attributed to the influence of amorphous structure and surface impurities. The sputtered nickel exhibits a column structure. During the thermocompression bonding process, liquid gallium penetratesthe gaps between the columnar nickels, reaching the bottom layer and diffuse in copper substrate. However, due to the high diffusion rate between copper and gallium, forming holes affect shear strength and reliability. The electroplating nickel system showed the most excellent shear strength of 3.89MPa after thermocompression at pressure 10 MPa and 300°C. Thermal aging test and thermal cycling test showed increasing shear strength, confirming the great potential of gallium particles applied to copper-to-copper electronic packaging systems.

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