本研究的目標是將有機場效電晶體應用於不同的有機元件中，並著重研究和增強每個有機元件於長期使用或適應不同環境條件下進行穩定性分析。
在第二章中，我們以PI作為軟性有機反相器的基板，並在基板上旋轉塗佈C-PVP/氧化鋁形成雙層介電層。這些軟性有機反相器能夠在低電壓2V下操作，且電流增益超過50。經過104次撓曲測試後，這些軟性有機反相器仍然表現出優異的機械性和電性。這種穩定性歸因於有機半導體具有優越的微結構，這一點通過in-situ的2維低掠角X射線繞射（GIXRD）得到證明。GIXRD光譜分析顯示，經過不同的彎曲次數後，軟性有機反相器的繞射峰寬度變化不到1.5％。而且在104次彎曲後，軟性有機反相器仍然保持穩定的增益，且在彎曲過程中最大的轉換電壓偏移量為0.31V。這些結果表明，我們的反相器在低電壓柔性電子商業應用中具有潛在的潛力。
在第三章中，我們研究了低電壓驅動的有機場效電晶體，以p型半導體PBTTT-C14作為主動層材料。本章的重點在於聚合物半導體晶化過程，並通過探討聚合物半導體微結構的變化來了解其光電特性。我們利用熱梯度系統從六甲基苯（HMB）/ PBTTT-C14混合溶液中形成了寬度為0.8 µm的纖維狀晶體。利用這些晶體製造了具有結晶化PBTTT-C14的有機場效電晶體。在熱梯度系統中，HMB從HMB/PBTTT-C14混合溶液中分離出來，並且在樣品移動方向上結晶。通過原子力顯微鏡和拉曼光譜在不同溫度下對晶體進行物理性質分析，實驗結果顯示透過HMB處理的PBTTT-C14薄膜可改善半導體微結構，實現了具方向性的晶體結構。這些結果與理論計算相結合，顯示了結晶化的PBTTT-C14晶體中的π堆疊程度很高。結晶化的PBTTT-C14晶體展現出良好的結晶性，增強了分子內和分子間的載子傳輸。值得注意的是，與旋轉塗佈的PBTTT-C14有機場效電晶體相比，不論是在氮氣填充的手套箱中或者在大氣環境條件下進行測量，具有結晶化的PBTTT-C14有機場效電晶體的電性能均顯著改善。這種現象在使用相同熱梯度系統製造的結晶化P3HT的有機場效電晶體中也可以觀察到。
在第四章中，本研究專注於利用氧化鋁作為高K值介電材料，在有機場效電晶體中實現高電特性的穩定性和記憶保持。為了增強穩定性，我們使用不同PI固體的含量來改變有機場效電晶體的閘極介電層，並降低閘極介電層中的陷阱態密度，以控制n型半導體有機場效電晶體的穩定性。透過添加PI層，我們增強了偶極矩，從而使得載子生成增多，進而改善有機場效電晶體的特性和穩定性。與僅使用氧化鋁作為介電層相比，使用不同PI固體含量的有機場效電晶體在固定閘極偏壓應力下隨著時間的增加能夠更穩定地運行。此外，使用PI薄膜的有機記憶元件表現出優異的記憶保持性和耐用性。總結來說，本研究成功製造了低電壓、穩定的有機場效電晶體，並應用於具有高記憶窗口的有機記憶元件，未來在記憶體元件方面具有相當大的潛力。
在第五章中，我們成功地在室溫下將P3HT與Fe3O4奈米粒子結合，製造了聚合物磁性半導體薄膜。當P3HT薄膜中嵌有Fe3O4奈米粒子的材料施加磁場時，我們使用磁力顯微鏡觀察到強磁訊號。在室溫下，聚合物磁性半導體展示出明顯的鐵磁遲滯曲線，其順磁力為300 Oe。這表明P3HT分子和Fe3O4奈米粒子之間存在強烈的自旋耦合。

The development of organic electronics has garnered significant attention, emphasizing the necessity to investigate the stability characteristics of organic electronic devices, particularly for long-term usage and adaptability to different environmental conditions. The objective of this research is to apply organic field-effect transistors (OFETs) in various organic devices and investigate and enhance the stability of each devices. Through these efforts, this study aims to contribute to the advancement of stable and reliable organic electronics.
In Chapter 2, polyimide (PI) was used as the substrate for flexible organic inverters. A bilayer dielectric consisting of cross-linked poly(4-vinylphenol)/ aluminum oxide (Al2O3) was employed. These flexible organic inverters were capable of operating at a low voltage of 2V. The achieved gain at 2V was over 50. The organic inverters demonstrated excellent mechanical and electrical stability even after undergoing 104 bending times. This stability was attributed to the superior microstructural stability of the organic semiconductors, as evidenced by in situ 2D grazing incidence X-ray diffraction (GIXRD). Analysis of GIXRD spectra revealed that the width of the diffraction peak varied by less than 1.5% after different bending times. The proposed inverters maintained stable gains of over 50 even after 104 bending times, with a maximum transition voltage shift of 0.31V during bending. These results suggest that our inverters have promising potential for commercial applications in low-voltage flexible electronics.
In Chapter 3, we investigated low-voltage driven OFETs utilizing the p-type semiconductor poly(2,5-bis(3-alkylthiophen-2-yl) thieno[3,2-b] thiophene) (PBTTT-C14) as the active layer. The focus was on the processing and crystallization of polymer semiconductors, as their opto-electronic properties heavily rely on microstructure. We present the results of polymer crystallization from hexamethylbenzene (HMB)/PBTTT-C14 mixtures, employing a thermal gradient system that resulted in the formation of fiber-like crystals measuring up to 0.8 μm in width. Crystalline PBTTT-C14-based OFETs were fabricated using these crystals. In the thermal gradient system, HMB separated from the HMB/PBTTT-C14 mixtures and crystallized in the direction of sample movement. Characterization of the crystals' physical properties through in situ atomic force microscopy and Raman spectroscopy at different temperatures revealed that the PBTTT-C14 thin film processed with HMB exhibited improved microstructure and achieved a directionally crystalline structure. The combination of these results with theoretical calculations indicated a high degree of π-stacking within the crystalline PBTTT-C14 (c-PBTTT-C14) crystal. c-PBTTT-C14 exhibited good crystallinity, enhancing the intra- and inter-molecular transmission of electrons. Notably, the electrical performance of c-PBTTT-C14-based OFETs showed significant improvement compared to spin-coated PBTTT-C14-based OFETs, regardless of whether the measurements were conducted in a nitrogen-filled glove box or in atmospheric conditions. This phenomenon was also observed in the crystalline P3HT-based OFETs fabricated using the same thermal gradient system.
In Chapter 4, this study focused on achieving high electrical stability in OFETs and retention in OFET-based memory devices by utilizing Al2O3 as a high-K dielectric material. The objective was to reduce threshold and operating voltages. To enhance stability, we modified the gate dielectric of OFETs using PI with varying solid contents. This adjustment allowed us to control stability in N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C13)-based OFETs by reducing trap state density within the gate dielectric. By incorporating the PI layer, carriers accumulated due to the dipole field created by electric dipoles compensated for gate field-induced stress, resulting in improved performance and stability of the OFETs. Compared to using Al2O3 alone as the dielectric layer, modifying the OFET with different solid contents of PI enabled more stable operation under fixed gate bias stress over time. Additionally, the OFET-based memory devices with the PI film exhibited excellent memory retention and durability. In conclusion, this study successfully fabricated a low-voltage, stable OFET and demonstrated the potential for industrial production of organic memory devices with a significant memory window.
In Chapter 5, we successfully fabricated polymer magnetic semiconductor thin films at ambient temperature by combining poly(3-hexylthiophene-2,5-diyl) (P3HT) with Fe3O4 nanoparticles. When a magnetic field was applied to the P3HT film embedded with Fe3O4 nanoparticles, a strong magnetic signal was observed using a magnetic force microscope. The polymer magnetic semiconductor exhibited a clear ferrimagnetic hysteresis curve at room temperature, with a coercivity of 300 Oe. This indicates the presence of strong spin coupling between P3HT molecules and Fe3O4 nanoparticles.

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