本研究以數值方法探討以六個加熱燈環快速熱處理機台內的快速熱化學氣相沉積製程,機台的直徑300厘米之晶圓快速加熱設定的製程溫度在進行薄膜沉積, 當加熱燈使用功率調整可將晶圓的最大溫差降至3K.整個分析以不同腔體條件對晶圓表面溫度和沉積厚度均勻性的影響,如製程溫度範圍下、腔體壓力、晶圓轉速以及晶圓表面性質。
　　發現沉積厚度受到晶圓的溫度均勻性所影響,當製程溫度高於1200K會造成晶圓表面溫度及薄膜厚度的均勻性變差。腔體壓力5torr的對流效應最弱及轉速從0rpm調到240rpm,在晶圓快速旋轉下,改善晶圓表面溫差,所以薄膜厚度也更均勻。晶圓表面覆蓋一層二氧化矽可以有效降低加熱燈功率。

　In this thesis the Rapid Thermal Chemical Vapor Deposition of silicon in a RTP furnance with six heating rings is studied numerically. The 300 mm silicon wafer is heated rapidly to the designated process temperature and then maintains at that temperature until the desired deposition thickness is achieved. When adaptive heating powers are employed, the maximum temperature difference of the wafer can be reduced to within 3K. The effects of the following parameters such as: the process temperature, process pressure, rotational speed of the wafer, wafer surface properties, and convection of the reactngn gas flow,
on the deposition thickness are investigated.

It is found that the deposition thickness is strongly influenced by the wafer temperature distribution and
the thickness uniformity is strongly related to the wafer temperature uniformity. Since the decompostion rate of silane increases exponentially when temperature is higher than 1200K which makes the deposition thickness extremely sensitive to the wafer temperature and leads to poor uniformity. In addition, the lower chamber pressure and the rotating wafer results in better temperature uniformity and thus deposition thickness uniformity. The Coating with a thin film of silicon dioxide on the silicon wafer can reduc the power of heating lamp which is needed to deposit more
silicon.

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