| 研究生: |
邱英峰 Chiu, Ying-Feng |
|---|---|
| 論文名稱: |
絕緣層覆矽超絕熱方向耦合器之設計與模擬 Design and Simulation of a Counterdiabatic Directional Coupler based on SOI |
| 指導教授: |
曾碩彥
Tseng, Shuo-Yen |
| 學位類別: |
碩士 Master |
| 系所名稱: |
理學院 - 光電科學與工程學系 Department of Photonics |
| 論文出版年: | 2014 |
| 畢業學年度: | 102 |
| 語文別: | 英文 |
| 論文頁數: | 66 |
| 中文關鍵詞: | 絕緣層覆矽 、波導 、耦合器 |
| 外文關鍵詞: | silicon-on-insulator, waveguides, coupler |
| 相關次數: | 點閱:142 下載:14 |
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本論文致力於研究絕緣層覆矽(silicon-on-insulator, SOI)超絕熱方向耦合器之理論分析與數值模擬。首先,我們介紹耦合波導系統之基本理論,並比較弱耦合波導系統與近共振電磁場下兩能階系統之量子–光學相似性,藉此將量子系統中之超絕熱協定(counterdiabatic protocol)應用到耦合波導系統中,以抵銷絕熱模態間之非絕熱耦合以避免其干擾模態轉換,如此,即使裝置長度短至無法滿足絕熱條件,也能使耦合器達到良好的功率轉換效率,亦即我們能藉由此協定設計長度更為縮減的耦合器。此外,我們著重於利用絕緣層覆矽材料以具體實現超絕熱協定之設計,因為絕緣層覆矽材料所具有的高折射率對比(high-index-contrast)特性,耦合器的長度可望更為縮減。我們藉由實際模擬的結果,驗證了超絕熱協定在絕緣層覆矽材料上之適用性。模擬結果與理論預測相符合,並顯示了絕緣層覆矽超絕熱方向耦合器在極短裝置長度下依然具有良好的寬頻特性。
This thesis is devoted to the theoretical investigation and numerical simulations of a counterdiabatic directional coupler based on silicon-on-insulator (SOI). We begin by introducing the theory of coupled-waveguide system and the quantum‐optical analogies between weakly-coupled waveguide structure and two-level system driven by near-resonant laser light. By means of the analogies, the counterdiabatic protocol is introduced into coupled-waveguide system to cancel the nonadiabatic coupling between adiabatic modes and achieve high-fidelity power coupling even when the device length is too short to satisfy the adiabatic condition. The device length can hence be shorten. We emphasize the applicability of the counterdiabatic protocol to the SOI material system, the high-index contrast of SOI also allows devices to be more compact. The simulation results agree with the theoretical predictions, and show that the counterdiabatic coupler has the desired broadband characteristics at a short device length.
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