本研究利用陽極氧化鋁模板(AAO)輔助製備一維單晶二硒化銅銦(CIS)奈米柱陣列並搭配氧化銦錫(ITO)漿料形成核殼結構，應用於太陽能電池元件的吸收層，和以往平面結構的吸收層相比，奈米柱擁有更加突出的光電特性，期望可以有效提升元件整體的光電轉換效率。
本研究利用鋁片經陽極氧化製備AAO模板，再將CIS藉由電鍍沉積形成奈米柱結構。透過模板移除得到完整CIS奈米柱，並疊上ITO漿料，形成ITO/CIS核殼結構。本研究利用退火處理來改善CIS奈米柱結晶品質，使CIS晶相轉為理想CIS(112)晶相。由XRD量測得到CIS(112)之FWHM為0.3307，晶粒大小為24.72 nm，得到CIS之當量比≈ 1 : 1 : 2。吾人以氧化銦錫與DMSO有機溶劑混合後，氧化銦錫與奈米柱之間的接觸角由原本的15.31°降低至6.08°，消除ITO疏水性問題，亦有蕭特基二極體之特性。

CuInSe2 nanowire photovoltaic has been the subject of research with a view to enhancing the photo absorption efficiency and reducing the material consumption compared with bulkand thin-film PV. However, its surface recombination is a problem. Therefore, we use the core-shell structure to solve the problem. In this study, we successfully fabricated ternary CuInSe2 nanowire arrays in a high temperature electrolyte using pulse electrodeposition techniques with the assistance of an anodized aluminum oxide (AAO) template. We tune the concentration of InCl3 and the pH value of solution to improve the crystallization of CIS nanowire. In I-V measurement, we obtained leakage current Io near 16.3 nA. Then, we fabricated core-shell structure with ITO/CIS material to reduce the defects near the surface of nanowire.

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