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研究生：	陳柏成 Chen, Po-Cheng
論文名稱：	氮化鎵系列摻雜錳形成中間能帶太陽能電池之研究 Characterization of Mn-doped GaN-based Intermediate Band Solar Cell
指導教授：	許進恭 Sheu, Jinn-Kong
學位類別：	博士 Doctor
系所名稱：	理學院 - 光電科學與工程學系 Department of Photonics
論文出版年：	2016
畢業學年度：	105
語文別：	英文
論文頁數：	140
中文關鍵詞：	中間能帶太陽能電池、氮化鎵、電子傳遞機制
外文關鍵詞：	intermediate band solar cell, GaN, electron transfer mechanism
相關次數：	點閱：128 下載：1
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本論文主要是探討具錳摻雜氮化鎵、氮化鋁鎵、氮化銦鎵主動層應用於太陽能電池之光電特性。
首先，在材料分析方面，我們利研究錳摻雜氮化鎵系列的表面形貌、結晶品質、光學特性、電子束縛能。在元件應用方面，我們已成功利用錳摻雜氮化鎵系列特性而設計中間能帶太陽能電池元件。
我們已成功利用錳摻雜氮化鎵製作中間能帶太陽能電池元件，進行材料品質與特性分析，並透過外部量子效應、電致發光頻譜、雙雷射照光之電壓電流特性、低溫量測系統了解中間能帶吸收特性及載子傳遞機制。
另一方面，我們亦成功利用錳摻雜氮化鋁鎵製作中間能帶太陽能電池元件，並比較分析主動層摻雜不同錳流量對於中間能帶太陽能電池之影響，預期能藉由中間能帶與價(導)電帶間的吸收而貢獻出額外的光電流，進而提升轉換效率，以及了解氮化鎵摻雜錳中間能帶太陽能電池其內部電子傳遞機制。
最後我們成長錳摻雜氮化銦鎵製作中間能帶太陽能電池元件，雖然元件透過外部量子效應具有中間能帶的吸收特性，然而元件並未展現出如預期光電流增幅的特性。另外從低溫電致螢光頻譜中可發現摻雜錳會造成銦聚集，推測原因為氮化銦鎵磊晶成長時，錳與銦有相互競爭之現象，而形成富銦區域(In-rich)，使得變溫電致螢光量測下發現有S-shape的現象，另外從變電流電致螢光也可發現隨著電流增大，其發光機制會逐漸由銦的侷限態變成價帶至導帶的載子躍遷所主導。

The dissertation was focused on the optical and electrical characteristics of GaN-based intermediate band solar cells with Mn-doped GaN, Al1−xGaxN and In1−xGaxN absorption layer. The surface morphology, crystallinity, optical, electrical electron, binding energy of Mn-doped GaN-based material and devices were studied.
As for the Mn-doped GaN and Mn-doped Al1−xGaxN intermediate band solar cell(IBSCs), we designed two kinds of experiments , which were two photo external quantum efficiency EQE、dual laser system to verify the existence of the intermediate band and analyze its electron transfer mechanism. And using high-concentrated illumination and low temperature to investigate the characteristics of Mn-doped GaN and Mn-doped Al1−xGaxN intermediate band solar cells (IBSCs) with high power light input
The IBSCs with a Mn-doped In1−xGaxN absorption layer were presented in our previous work. However, their efficiencies were not as expected. The material quality of In1−xGaxN should be improved, and the photon absorption selectivity issue should be considered. The EL spectra anomalous temperature behavior of the peak energy is S-shaped (decrease–increase–decrease). As a result of the large lattice mismatch between InN and GaN, their low miscibility led to In aggregation and phase separation. Furthermore, significant strains were formed in the In1−xGaxN host material. Previous studies showed that spinodal decomposition produced quantum-dot-like structures around the designated In1−xGaxN layers. The cluster structures formed spatial potential fluctuations and localized energy states for trapping carriers. In addition to the issues of Jsc and Voc, achieving a high FF to improve cell efficiency is also a key point.

摘要	I
Abstract	III
誌謝	V
Contents	VI
Figure Captions	IX
Table Captions	XIX
Chapter 1 Introduction	1
1.1 Introduction to Photovoltaic Progress	1
1.2 Introduction to Intermediate-band Solar Cells (IBSCs)	1
1.3 Focus and Organization of Thesis	3
Chapter 2 The Growth of Mn-doped GaN-based Materials Characteristics	7
2.1 Introduction to Mn-doped GaN-Based Structure	7
2.2 Growth and Material of Mn-doped GaN Structure	7
2.2.1 Surface morphology and crystallinity of Mn-doped GaN samples	8
2.2.2 Optical property and material crystallinity of Mn-doped GaN samples	9
2.3 Growth and Material of Mn-doped InxGa1-xN Structure	10
2.3.1 Surface morphology and crystallinity of Mn-doped InxGa1-xN samples	11
2.3.2 Optical property and material crystallinity of Mn-doped InxGa1-xN samples	12
2.4 Growth and Material of Mn-doped AlxGa1-xN Structure	13
2.4.1 Surface morphology and crystallinity of Mn-doped AlxGa1-xN Samples	14
2.4.2 Optical property and material crystallinity of Mn-doped AlxGa1-xN samples	15
Chapter 3 Studying the Photovoltaic Characteristics of Mn-doped GaN Intermediate-band Solar Cells	32
3.1 Introduction to Mn-doped GaN Structure	32
3.2 Growth and Fabrication of Mn-doped GaN IBSCs Structure	32
3.3 Optical and Electrical Characterization of Mn-doped GaN IBSCs	34
3.4 Low Temperature and Concentrated Illumination Operation of Mn-doped GaN IBSCs	41
Chapter 4 Photovoltaic Characteristics of Mn-doped AlxGa1-xN Intermediate-band Solar Cells	70
4.1 Introduction to Mn-doped AlxGa1-xN/GaN and AlxGa1-xN/GaN Epitaxial Heterostructure	70
4.2 Growth and Fabrication of Mn-doped AlxGa1-xN IBSC Structure	71
4.3 Optical and Electrical Characterization of Mn-doped AlxGa1-xN Intermediate-band Solar Cells	73
4.4 Low-temperature and Concentrated-illumination Operation of Mn-doped AlxGa1-xN Intermediate-band Solar Cells	80
Chapter 5 Photovoltaic Characterization of Mn-doped InxGa1−xN Intermediate-band Solar Cells	111
5.1 Introduction to Mn-doped InxGa1−xN Intermediate-band Solar Cells	111
5.2 Growth and Fabrication of Mn-doped InxGa1−xN Intermediate-band Solar Cell Structure	111
5.3 Optical and Electrical Characterization of Mn-doped InxGa1−xN Intermediate-band Solar Cells	112
5.4 Low-temperature Operation of the Mn-doped InxGa1−xN Intermediate-band Solar Cells	117
Chapter 6 Conclusions and Future Work	128
6.1 Conclusions	128
6.2 Future Work	129
References	130
Publication List	136
                                    

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