在本論文中，我們針對高性能與低功耗應用提出適用的方法。在高性能部分，我們提出具有高介面品質的鍺作為通道材料來增強驅動電流。隨著鰭狀通道高度越來越高，側壁上的傷害及缺陷影響變得更明顯，因此研究模仿蝕刻過的鰭狀通道側壁表面之影響，並且也討論表面處理條件、不同的閘極層與金屬後退火之影響。在低功耗部分，我們提出以鐵電材料作為閘極介電層，負電容效應已經被證實可以克服金氧半場效電晶體在室溫下次臨界擺幅60 mV/dec的限制，然而對於鍺金氧半電容器之鐵電特性相關研究仍十分缺乏，因此有系統地研究在鍺金氧半電容器與金屬-絕緣層-金屬結構上不同比例的鉿鋯氧化物之鐵電特性，此外也探討不同介面層與不同退火處理對鍺金氧半電容器之影響。

In this thesis, we proposed some applicable approaches for both high performance and low power applications. For high performance applications, we have demonstrated germanium with high interface quality as channel materials to enhance the drive current. As the fin-height is higher, the effects of the damage and defects on the sidewall become more significant. The impacts of etched surface by mimicking the sidewalls of the etched fins are studied. The effects of surface treatment conditions, different gate stacks and post metal annealing are also discussed. For low power applications, ferroelectric materials as the gate dielectric are proposed. NC effects have been demonstrated to overcome the fundamental limit of subthreshold slope (SS) of 60 mV/dec at room temperature for MOSFETs. However, there is still lack of study on the ferroelectric properties of Ge metal-oxide-semiconductor capacitors (MOSCAPs). The ferroelectric characteristics of different Hf/Zr ratio of Hf1-xZrxO on Ge MOSCAPs and metal-insulator-metal (MIM) structures have been systematically studied. Besides, the impacts of different interfacial layers with different annealing treatment on Ge MOSCAPs have been also discussed.

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