本研究以矽奈米為結構製作出太陽能電池元件。奈米線的優點為表面積大，可增加光的吸收效率且生產成本低。根據文獻，奈米線的作法可大約為蝕刻基板及VLS機制成長兩種。就程序來說，用蝕刻的方法形成奈米線較為簡便，但以奈米線作為元件有大半是原因為基板可回收再利用以降低生產成本，故本研究以VLS成長機制成長出的奈米線為元件基礎。
本研究比較太陽能電池之三種結構:基板型太陽能電池、n型奈米線太陽能電池、具有p-n結構之奈米線太陽能電池。n型奈米線元件之p-n junction接面在奈米線與基板之間，希望利用奈米線的光吸收效果提升轉換效率。之後進一步在奈米線上做出p-n junction以增加發電面積，期望元件表現能比n型奈米線太陽能電池好。

In this study,we fabricate solar cell device by using nanowires as the structure. The advantages of nanowire are the large surface area which can increase the absorption efficiency of sun light and low cost.
There two main method to fabricate nanowires. One way is by etching Si wafer and the other way is by VLS growth mechanism. The process to etch wafer is more simple,but the wafer can not be reused. So we use the VLS growth method to fabricate nanowires in order to reuse the wafer in the future.
In this study,we compare three structure of solar cell:wafer based solar cell,n-type nanowires solar cell,nanowires with p-n junction solar cell. The p-n junction of the n-type nanowires solar cell is between wafer and nanowires. We hope the high light absorption efficiency can increase the efficiency of the device.Futher,we create p-n structure in the nanowires to increase working area hoping it can perform better than n-type nanowires solar cell.

[1]E. Garnett and P. Yang. ,Nano Lett.,10,1082-1087,2010

[2]J.-S. Hwang,M.-C. Kao,J.-M. Shiu,C.-N. Fan,S.-C. Ye,W.-S.Yu,H.-M. Lin,T.-Y. Lin,S. Chattopadhyay,L.-C. Chen,and K.-H. Chen,J.Phys.Chem. C,
115,21981-21986,2011

[3]B. M. Kayes,M. A. Filler,M. D. Henry,J. R. Maiolo III,M. D. Kelzenberg,M. C. Putnam, J. M. Spurgeon, K. E. Plass,A. Scherer,N. S. Lewis,H. A. Atwater ,IEEE,Photovoltaic Specialists Conference, 2008. PVSC '08. 33rd IEEE,1-5,2008

[4]F. Falk,G. Jia,G. Andr,I. Sill,N. Petkov ,Proc.of SPIE,8111,81110Q-1,2011

[5]JJ. Loferski,Theoretical Considerations Governing the Choice of the Optimum Semiconductor for Photovoltaic Solar Energy Conversion,Journal of Applied Physics,27,777,1956

[6] C. Ji,E. A. Guliants,W. A. Anderson, IEEE,the 29th IEEE Photovoltaic Specialists Conference,1314-1316,2002

[7]B. M. Kayes and H. A. Atwater ,Journal of Applied Physics,97,114302,2005

[8]K. Peng,Y. Xu,Y. Wu,Y. Yan,S. T. Lee and J. Zhu,Small,1,1062-1067,2005.

[9]B. Tian,X. Zheng,T. J. Kempa,Y. Fang,N. Yu,G. Yu,J. Huang and C. M. Lieber, Nuture,449,885-890,2007

[10]T. J. Kemp,B. Tian,D. R. Kim,J. Hu,X. Zheng and C. M. Lieber, Nano Letters,8,456-3460,2008.

[11]http://spectrum.ieee.org/semiconductors/design/nanowire-silicon-solar-cell-for-powering-small-circuits

[12]Z. Pei,S.-T. Chang,C.-W. Liu,and Y.-C. Chen, Ieee Electron Device Letters,30, 12,2009

[13] IBM T. J. Watson Research Center, 93,1388–1393,2009

[14] L. Hu and G. Chen, Nano Lett.,7,11,2007

[15] L. Tsakalakos,J. Balch,J. Fronheiser,B. A. Korevaar,O. Sulima J. Rand, Applied Physics Letters,91,233117,2007

[16]J. Neison, The Physics of Solar Cells, Imperial College Press,1-2,2003

[17]http://org.ntnu.no/solarcells/pages/introduction.php

[18]J. Neison, The Physics of Solar Cells, Imperial College Press,9-12,2003

[19]www.docdiamond.com/articles/what-is-diamond.php

[20]Kittel, Introductions to Solid State Physics 8/e, John Wiley&Sons, Inc.,18,2005

[21]http://www.el-cat.com/silicon-properties.htm#w1

[22]http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/Figs/122.gif

[23]http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/Figs/135.gif

[24]http://www.ioffe.rssi.ru/SVA/NSM/Semicond/Si/bandstr.html