在[鐵磁/反鐵磁]多層膜中的交換耦合現象目前正逐漸引起許多研究團隊的興趣[43,44,77~79]。本實驗利用離子束濺鍍成長[IrMn/CoFe]單層、雙層、三層、四層及多層之交換耦合界面(EBIF)。在單層及雙層交換耦合界面中(同時成長)，我們証明了在第二層的CoFe有較大的交換場而第一層CoFe的交換場則較小。在三層及四層的交換耦合界面中(同時成長)，我們証明了交換場在第二層CoFe最大、第一層CoFe次之而第三層CoFe最小，如Fig.1(a)所示。另外，我們也觀察到對於交換耦合界面數目(N)大於4的多層膜而言，交換場隨著N的增加而遞減，如Fig.1(b)所示。藉由一個考慮在IrMn及CoFe層中之磁疇及結構因素的模型，我們對於交換場在[IrMn/CoFe]多層膜中的結果提出解釋。

There is a growing interest in study of exchange biasing (EB) in antiferromagnetic(AF)/ ferromagnetic(F) multilayers (MLs).[43,44,77~79] By ion beam sputtering, we have prepared and studied single-,dual-,tri-, quadri-, and multi- EB interface (EBIF) of [IrMn/CoFe]. In the (simultaneously prepared) single- and dual- EBIF,we have identi-fied a large EB in the second CoFe layer and a small EB in the first CoFe layer. In the (simultaneously prepared) tri- and Quadri-EBIF,we have identified a large EB in the second CoFe layer, a medium EB in
the first CoFe layer and a small EB in the third CoFe layer, as shown in Fig. 1(a). We have also observed that EB tends to decrease with the increase of the number of EBIF (N) for N>4 in the multi-EBIF, as shown for example in Fig. 1(b). The results of EB in IrMn/CoFe MLs are explained by a simple model considering factors of magnetic domain and structure in IrMn and CoFe layers.

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