本論文是以有機金屬氣相磊晶法成長出氮化銦鎵摻雜錳的材料，並且針對其材料特性進行分析以及元件特性的探討。在材料分析方面，我們利用X光繞射、穿透、低溫光致螢光、電傳輸特性對氮化銦鎵摻雜錳進行材料結晶品質以及光電特性分析，並且推測出於氮化銦鎵材料中摻雜過鍍金屬錳之後，造成材料品質降低，使原本預期形成的中間能帶並沒有形成，而是形成雜質能帶。元件應用上，將其材料製作成太陽能電池，配合穿透頻譜、量測外部量子效應以及雙光源外部量子效應證實出錳雜質能帶具有中間能帶的吸收特性，是可以增加長波長的吸收，但是在太陽能參數的量測上並沒有展現出中間能帶高短路電流增幅的特性，反而短路電流下降以及光電轉換效率降低，其推測原因為於氮化銦鎵材料中摻雜錳之後造成材料品質降低以及提高了串聯電阻。實驗結果與分析將於本論文中詳加探討。

InGaN alloys has been predicted that a full-solar-spectrum material system could be achieved by the confirmation of InN with its energy band gap around 0.7 eV. With the combination of InXGa1-XN alloy systems, one may theoretically design tandem photovoltaic devices with optimum band gaps to absorb photon energy between 0.7 eV of infrared and 3.4 eV of ultraviolet regions. In this study, Mn-doped InGaN materials were grown by metalorganic vapor phase epitaxy, and their characterization and properties studied. By using X-ray, transmittance, photoluminescence and electrical properties, the Mn-doped InGaN-based materials and devices were studied.
We conjecture that the poor quality of Mn-doped InGaN-based materials were attributed to Mn-relative impurity states in the materials. We fabricated the Mn-doped InGaN-based solar cells device in this research. The measurements of transmittance spectrum, relative external quantum efficiency and two photons external quantum efficiency showed the presence of an Mn-relative impurity states that appeared to be intermediate band absorption property, but the efficiency, Voc, Jsc, FF decreased due to the poor quality of Mn-doped InGaN material and high series resistance. Further details of the finding will be discussed in the dissection.

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