本研究目的為UV光點陣列掃描來取代傳統光罩的微影技術，傳統微影製程製作光罩的花費與時間為負擔，變更微影圖形須重新製作光罩，UV光點陣列掃描不需要製作成本，且擁有極大靈活性。
本文開發了以UV光點陣列斜拖拉式演算法，系統架構使用波長405nm之紫外光(H-Line)，透過數位微鏡面裝置(Digital Micro-mirror Device, DMD)控制每個光點開關，光線通過第一鏡組成像於微透鏡陣列，微透鏡陣列重新聚光後通過空間濾波器，透過空間濾波的方式濾除雜散光，再由第二鏡組成像為一光點陣列，本文使用的陣列大小為204 153，實際大小為13.89 10.4 mm2，並由XYZ平台控制試片移動。本文使用斜掃描法提高光點陣列掃描精度，利用多套圖檔(*.bmp)輸入控制板控制DMD，透過自己撰寫模擬軟體，檢查圖案是否正確，且可模擬曝光實驗，預測曝光速度與線寬間的關係。光阻選用高感光度光阻S1813，厚度1 μm，光點大小16.2 μm(FWHM)，由直線測試最小線寬，並測試直角、斜線、圓弧等代表性圖形，最終成功於4吋基板曝光大面積5.1 x 3.7 cm2之電路圖形之製作，可達到最小線寬9.2 μm、線增量1.5 μm之任意不規則圖形的曝光。

This study develops a maskless lithography system using arrayed ultraviolet (UV) light spots with an obliquely scanning method. A 405 nm UV light emitting diode (LED) is used as the illumination source. A digital micromirror device (DMD) acts as the switches of the UV spots. UV Light reflected by DMD is projected to an microlens array and focused into a pinhole array which acts as a spatial filter array. After the pinhole array, the DMD-switched UV light is projected onto a photo-resist layer deposited on a substrate. The substrate is moving by an XYZ stage for carrying out maskless lithography. The size of arrayed UV spots points is 204 by 153 with an actual area size of 13.89 10.4 mm2. A software is developed for controlling the oblique scanning movement and synchronizing with transmitting image files to DMD controller to reach high pattern resolution. High sensitivity positive photoresist (S1813) with a thickness of 1 μm is used. The UV spot size is 16.2 μm (FWHM). Finally this study successfully exposure arbitrary graphics with large area on a 4 inch substrate. The minimum line width is 9.2 μm and the minimum increasing of line width is 1.5 μm.

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