本研究以Metal/Ferroelectric/Insulator/Semiconductor（MFIS）與Metal/Ferroelectric/Metal（MFM）電容結構為基礎，探討 Hf0.5Zr0.5O₂（HZO）薄膜之鐵電特性與材料特性。研究中系統性分析不同製程條件、退火順序、電容面積以及種子層結構對HZO薄膜電性表現與晶相組成之影響。電性量測方面，透過PUND、C-V與耐久度測試，評估鐵電電容之極化行為、介電響應與可靠度表現，並分析大、小面積電容的電性表現。
材料分析方面，則利用XRD、XPS、TEM以及同步輻射 XAS mapping技術，進一步探討HZO薄膜之結晶行為、化學鍵結狀態、氧相關缺陷與晶相分布。
整體而言，本研究建立了製程條件、電容尺寸微縮、材料結構與鐵電電性表現之間的關聯性，並可作為未來 HZO-based 鐵電電容製程最佳化，以及其應用於非揮發性記憶體元件之參考。

This study investigates the ferroelectric and material properties of Hf₀.₅Zr₀.₅O₂ (HZO) thin films based on Metal/Ferroelectric/Insulator/Semiconductor (MFIS) and Metal/Ferroelectric/Metal (MFM) capacitor structures. The effects of different process conditions, annealing sequences, capacitor areas, and seed layer structures on the electrical performance and phase composition of HZO thin films were systematically analyzed. For electrical characterization, PUND, C–V, and endurance measurements were performed to evaluate the polarization behavior, dielectric response, and reliability of the ferroelectric capacitors.
The electrical characteristics of capacitors with different areas were also analyzed.For material characterization, XRD, XPS, TEM and synchrotron-based XAS mapping were used to further investigate the crystallization behavior, chemical bonding states, oxygen-related defects, and phase distribution of the HZO thin films.
Overall, this study establishes the relationship among process conditions, capacitor scaling, material structure, and ferroelectric electrical performance. The results can serve as a reference for future process optimization of HZO-based ferroelectric capacitors and their applications in non-volatile memory devices.

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