本論文探討鍺基板上形成不同的介面層(氧化鍺及三氧化二鋁)使用不同的退火條件，對氧化層鐵電材料二氧化鋯鉿的影響。再結晶退火方面，比起一般的快速熱退火，微波退火不僅可以在較低溫的條件下就顯現較佳的鐵電特性，也能夠抑制閘極漏電流的產生。在不同的介面層上，當介面為三氧化二鋁，二氧化鋯鉿表現為順電極化特性，而在氧化鍺上表現為鐵電特性。在氧化鍺上的鐵電電容經微波退火後，剩餘極化為25.2 (μC/cm2), 矯頑力為1.52 (V). 在n型鰭式電晶體中，次臨界擺幅為75 (mV/dec),開關電流比為 3.8ⅹ105。在p型鰭式電晶體中，次臨界擺幅為83mV/dec,開關電流比為 1.3ⅹ105。

In the thesis, we investigate of Germanium ferroelectric HfZrOx FinFETs on two interfacial layers (GeOx and Al2O3) by various annealing conditions. In the annealing conditions, microwave not only shows better ferroelectric effect but also suppresses gate leakage. When HZO on Al2O3 shows paraelectric behavior, HZO on GeOx depicts ferroelectric behavior. For HZO on GeOx MOS with microwave annealing, remanent polarization is 25.2 (μC/cm2), coercive force is 1.52 (V).For Ge n-FinFETs, the S.S. is could be suppressed to 75 (mV/dec), Ion/Ioff for 3.8ⅹ105. In the Ge p-FinFETs, S.S. is 83 mV/dec and Ion/Ioff is 1.3ⅹ105.

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