本論文研究方向著重在三個部分。第一部分為鈉摻雜於異質接面有機太陽能電池的製作。採用CuPc (cooper phthalocyanine)、C60 (Fullerene) 當作主動層材料，BCP (Bathocuproine) 做為激子阻擋層，並使用鈉摻雜於CuPc/C60接面。元件結構為ITO/CuPc/Na/C60/BCP/Al，藉著調整鈉的摻雜量以及利用後退火方式來提升元件特性參數，在2.6 A，1 sec條件下的摻雜量達到元件的最佳效率。
第二部分開始探討接面摻雜的影響機制，利用XPS分析以及載子遷移率的量測，來了解摻雜於CuPc與C60接面可能發生的電荷轉移或化學反應。
第三部分藉由電容的量測分析，探討退火過程可能造成的濃度變化。
此外，藉由電容的量測來得知元件的空乏寬度變化，來探討摻雜對接面電場強度的影響。

Alkali metal doped CuPc has been reported to have marked energy level shifts. When the C60 is deposited on the CuPc that is doped with alkaline metal, interfacial dipoles form; the Fermi level shifts toward the lowest unoccupied molecular orbital (LUMO) of CuPc; the potential difference between highest occupied molecular orbital (HOMO)-CuPc and LUMO-C60 increased upon dop¬ing with potassium, indicating a possible increase in the open-voltage of OPVs. Moreover, the alkali metal forms n-type dopant in C60 films, enhancing the electrical conductivity. These facts make the studies of the alkali doped CuPc/C60 became potential for the application in photovoltaics.
This study reports on the photovoltaic behaviors of CuPc/C60-based solar cells by incorporating Na at the donor–acceptor (D–A) interface. The research is novel and important because the PCE was doubled when little Na was doped at the D–A interface and the device was post-annealed (75 °C, 40 min). The effects of thermal annealing of the Na-doped devices were systematically studied. The transport behaviors of electron/hole only devices were measured, indicating that the ratio of electron/hole mobility became unity when thermal annealing was performed. Capacitance-voltage relation of the device with and without Na doping was measured, revealing that the Na doping reduced the depletion depth because of the formation of the interfacial dipoles.

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