本論文主要探討利用電化學蝕刻處理，形成奈米孔洞（Nanoporous）隨機分佈於n型氮化鎵（n-GaN）模板，再成長（Regrowth）LED整體結構並與一般無結構基板（Normal substrate）Conventional LEDs比較其光電特性研究，期望可以藉由孔洞（Porous）形成類似像空氣洞 （Air void）的幫助使得出光路徑有多次機會出光，使得增加光在內部散射機率，進而提升光輸出功率。
實驗方面利用電化學技術改變偏壓（20、30、40及60 V）將n-GaN模板內部蝕刻形成不同型態的Nanoporous，推判Regrowth LEDs 使原本樹枝狀Nanoporous因n-GaN再結晶形成橢圓形狀的Porous。最後分析Conventional LEDs、n-GaN模板經過E.C. 20、30、40及60 V in Conventional LEDs 五種試片的光電特性。於電流20mA 注入下，順向導通電壓（Forward Voltage, Vf）分別為2.84 V、2.85 V、2.86 V 、2.87 V與 2.87 V，相較於Conventional LEDs 增加0.01 ~ 0.03 V；而光輸出功率分別分別 8.7 mW、12.15 mW、12.34 mW 、12.97 mW 與9.92 mW，相較於Conventional LEDs約增加14.02 ~ 49.1 %。

In this study, we discussed the formation of nanoporous randomly distributed in the n-type gallium nitride (n-GaN) template by electrochemical etching process, and then investigated the photoelectric characteristics of regrown complete LEDs. We expected to see enhanced light output power efficiency due to increase in light scattering by porous-like air void.
In this experiment, we changed the bias (20, 30, 40 and 60 V) of the electrochemical etching process to form different types of nanoporous, and conjectured original arborization nanoporous to form oval shape of the porous by recrystallization of n-GaN after regrowth. Finally, we analyzed the optoelectronic characteristics of conventional LED and the LED n-GaN template after E.C. 20, 30, 40, 60 V.
Under 20-mA current injection, the forward voltages (Vf）were 2.84 V, 2.85 V, 2.86 V, 2.87 V and 2.87 V, respectively. Compared with the conventional LED, it was found that the bias was slightly higher by 0.01 ~ 0.03 V； light output power @20mA were 8.7 mW, 12.15 mW, 12.34 mW, 12.97 mW and 9.92 mW, respectively. Compared with conventional structure, we achieved an enhancement of approximately 14.02 ~ 49.1 %.

第一章
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第二章
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