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研究生：	李凱璿 Lee, Kai-Hsuan
論文名稱：	缺陷抑制與表面披覆效應提升氮化鎵系列異質接面高電子移動率電晶體與感光元件性能之研究 Dislocation Reduction and Surface Passivation on the Performance Improvement of GaN Based Heterostructure High Electron Mobility Transistors and Photodetectors
指導教授：	張守進 Chang, Shoou-Jinn 張品全 Chang, Ping-Chuan
學位類別：	博士 Doctor
系所名稱：	電機資訊學院 - 微電子工程研究所 Institute of Microelectronics
論文出版年：	2010
畢業學年度：	98
語文別：	英文
論文頁數：	271
中文關鍵詞：	氮化鎵、差排缺陷、表面披覆、電晶體、感光元件
外文關鍵詞：	GaN, Dislocation, Surface Passivation, Transistor, Photodetectors
相關次數：	點閱：74 下載：4
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三五族氮化物半導體材料擁有直接可調式寬能隙與特殊的極化性質，使之具有應用於先進固態電子與光電技術的獨特潛力。近幾年來，使用藍寶石基板成長氮化鎵系列材料於半導體元件上之應用已取得重大進展。然而，藍寶石基板與氮化鎵薄膜間存在的晶格不匹配與熱膨脹係數之差異，導致產生過大的差排缺陷密度(約1E9-1E11 cm-2)，嚴重限制了氮化鎵系列元件的發展。差排缺陷於元件性能及可靠度方面，均會造成不良的影響。

本研究中，我們以有機金屬化學氣相磊晶法成長氮化鎵系列電子與光電元件，並分析及探討缺陷抑制與表面披覆效應對於異質接面高電子移動率電晶體與紫外光感光元件造成之作用。首先，我們討論以多重氮化鎂/氮化鎵緩衝層或以低溫氮化鋁鎵置入高溫氮化鎵磊晶層之間，其對於降低元件內部差排缺陷密度之效能。使用這種結構設計能大幅降低差排缺陷密度至1E8 cm-2，使得晶體品質獲得有效改善，連帶地提升元件之性能。此外，採用光激發氣相沉積法成長低介電常數之二氧化矽薄膜或使用電子束蒸鍍之方式成長高介電常數之五氧化二鉭薄膜同時作為金氧半高電子移動率電晶體之閘極絕緣層與披覆層，亦被提出與探討。

隨後，我們討論同次成長覆蓋層結構(包括未活化鎂摻雜氮化鎵與未摻雜氮化鋁覆蓋層)對於元件性能提升的影響。這種結構已被證實可提供有效的表面披覆作用於氮化鎵材料。於成長氮化銦鎵材料時，使用三乙基鎵取代三甲基鎵作為烷基源可使其表面平坦並降低碳雜質之污染，卻會遭受氮空缺之影響。再者，使用同次成長覆蓋層結構且以三乙基鎵成長之氮化銦鎵感光元件亦能表現比傳統元件更佳之性能，利如較低的漏電流，較高的檢測效率與消除與陷阱捕捉有關之光電導增益現象。於-5 V 偏壓下，具有未活化鎂摻雜氮化鎵與未摻雜氮化鋁覆蓋層之氮化銦鎵感光元件，其拒斥比分別為7.11E3與1.38E3。而於相同偏壓下，其檢測效率分別為1.00E13與2.56E11 cmHz0.5W-1。

其次，我們首次嘗試以傳統用於發光元件之氮化銦鎵/氮化鎵多重量子井結構應用於氮化鋁鎵/氮化鎵電子移動率電晶體及感光元件上。此舉可結合光元件與電元件，進而實現光電積體電路化的目標。使用多重量子井結構於感光元件可增加偵測波長調變的彈性且可提高光響應；而使用多重量子井結構於多通道電晶體元件可增強主通道之載子侷限能力，進而提升主通道之轉導值；並由於副通道的有效導通，而能提供一較寬的閘極工作電壓擺幅與較高的電流驅動能力。

最後，我們提出以氮化銦鋁取代傳統氮化鋁鎵能障層，製作與氮化鎵晶格常數匹配之異質接面電晶體。此舉可於低應力情況下仍然維持高極化引致電荷，因而降低應力與缺陷造成的元件退化與可靠度問題。此外，我們也探討了使用電漿輔助化學氣相沉積方式異次成長或直接以有機金屬化學氣相磊晶方式同次成長之氮化矽對於元件表面披覆能力之優劣。研究指出使用同次成長之氮化矽能有效提升汲極電流，而使用異次成長之氮化矽則具較佳之高頻操作電流坍塌現象抵抗能力。因此，我們結合兩者之優點，提出氮化矽雙重披覆結構應用於氮化銦鋁/氮化鋁/氮化鎵高電子移動率電晶體。此元件於1 μm 的閘極線寬下，最大汲極電流與最大轉導分別為1188 mA/mm 與414 mS/mm，而電流增益截止頻率及最高振盪頻率分別為29.4 與 35.3 GHz，顯示其對於低雜訊、高溫度、高頻率與高功率操作，皆具有極大之應用價值與潛力。

III-nitride semiconductors, with wide direct tunable band gap and unique polarization property, demonstrate outstanding potential to significantly advance solid-state electronic and optoelectronic technologies. In recent years, various devices have been developed using GaN-based materials grown on sapphire substrates. However, the large mismatches in lattice constant and thermal expansion coefficient limit the development of these devices by generating a significant amount of threading dislocations in a density of 1E9-1E11 cm-2. Dislocations have a deleterious effect on device performance and reliability of parasitic issue.

In this work, GaN-based electronic and optoelectronic devices were grown by metal-organic vapor phase epitaxy(MOVPE). The impact of the dislocation reduction and surface passivation on the performance of heterostructure high electron mobility transistors (HEMTs) and ultraviolet photodetectors (PDs) have been characterized and investigated. Initially, unique techniques to grow multi-MgxNy/GaN buffer or insert a low-temperature Al-containing intermediate layer between high-temperature GaN, as dislocation-reduction structure design in applications to electronic and optoelectronic devices, have been developed. By our methods, the dislocation density in GaN epitaxial layer can be dramatically reduced to the order of 1E8 cm-2 and the device performance can be consequently improved owing to the ameliorative crystalline quality. Additionally, low-dielectric-constant SiO2 film grown by photo-chemical vapor deposition or high-dielectric-constant Ta2O5 film grown by electron beam deposition have been attempted simultaneously as gate insulator and passivation layer for metal-oxide-semiconductor (MOS-)HEMT.

Subsequently, the in-situ grown cap layer, such as un-activated Mg-doped GaN and un-doped AlN, was applied to the fabrication of GaN-based optoelectronics. This unique approach has been proved to provide an effective surface passivation to GaN material. In terms of InGaN material, using triethylgallium (TEGa) instead of trimethylgallium(TMGa) alkyl sources can achieve smoother surface morphology and reduce carbon contamination, but being affected by nitrogen vacancies. Furthermore, TEGa-grown InGaN-based PDs with in-situ passivation have shown that outperformed the regular ones in device characteristics, such as lower dark current, higher detectivity and alleviated photoconductive gain associated with trapping effect. Under a -5 V bias, it was found that the UV to visible rejection ratio was 7.11E3 and 1.38E3 for InGaN-based PDs with un-activated Mg-doped GaN and un-doped AlN layer, respectively. Under the same bias, it was also found that the normalized detectivity (D*) was correspondingly determined as 1.00E13 and 2.56E11 cmHz0.5W-1, respectively.

Next, InGaN/GaN multiple quantum well (MQW) structure has been used in AlGaN/GaN HEMTs and PDs for the first time. The new idea to develop such devices to a reasonable level of optoelectronic integrated circuit application is to be in connection with fundamental light-emitting MQW structure. The use of MQW in the active region of PD offers a flexibility to tune the detection edge and the possibility of increasing photo-response. On the other hand, it results in a very sharp rise of the conduction band after inserting MQW between two AlGaN/GaN hetero-junctions, which is able to obtain a larger main peak transconductance due to better carrier confinement and provides an efficient access to the satellite peak transconductance. It exhibits broader gate voltage swing and higher current-carrying capability as a result of incorporating MQW into multi-channel transistor.

Finally, GaN-based transistors on lattice-matched heterostructure have been accomplished. A promising new approach to improve the performance is to replace the AlGaN with InAlN as barrier layer. It can provide superior polarization-induced charges together with lower strain in InAlN/GaN HEMT, specifically for InAlN lattice matched to GaN, which is achieved by spontaneous polarization only. Consequently, degradation and reliability problems that relate to strain induced defects and strain relaxation could be eliminated. In addition, the effectiveness of SiN surface passivation, with ex-situ grown by plasma-enhanced chemical-vapor deposition or in-situ grown by MOVPE on such devices, has been investigated as well. It was found that the formation of in-situ SiN enhanced the drain current in larger extent while it reveals a better immunity against current collapse by using ex-situ SiN passivation. Therefore, InAlN/AlN/GaN HEMT by dual SiN passivation was introduced to take advantage of combining ex-situ and in-situ SiN passivation and the characteristics of a maximum drain current of 1188 mA/mm and a peak transconductance of 414 mS/mm with a 1 μm gate length were obtained. The current-gain cut-off frequency (fT) and maximum frequency of oscillation (fmax) was 29.4 and 35.3 GHz, respectively. It demonstrates a great potential of our devices to low-noise, high-temperature, high-frequency, and high-power applications.

Abstract (In English) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ i
Abstract (In Chinese) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ v
Acknowledgement ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ viii
Contents ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ ix
Table Captions ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ xiii
Figure Captions ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ xv

CHAPTER 1 Introduction

1 Why III-nitrides? ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅2
2 Statement of the problem ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 3
3 Metalorganic vapor phase epitaxy (MOVPE) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 4
3.1 General conception ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 4
3.2 The main reactions for GaN growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 6
4 Organization for this work ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 8

CHAPTER 2 GaN-based HEMT and photodetector with multiple MgxNy/GaN buffer

1 GaN Schottky barrier photodetector with multiple MgxNy/GaN buffer ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 14
1.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 14
1.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 15
1.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 22
1.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 23
1.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 31
2 AlGaN/GaN HEMT with multiple MgxNy/GaN buffer ⋅⋅⋅⋅⋅⋅⋅⋅ 32
2.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 32
2.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 37
2.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 38
2.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 38
2.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 44
3 High- or low-dielectric-constant gate dielectrics and their applications to AlGaN/GaN MOS-HEMTs ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 44
3.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 44
3.2 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 48
3.3 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 49
3.4 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 59

CHAPTER 3 InGaN-based photodetector with in-situ cap layer
1 InGaN photodetector with triethylgallium source and 
in-situ cap layer ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 104

1.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 104
1.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 105
1.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 111
1.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 112
1.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 119

CHAPTER 4 GaN-based HEMT and photodetector with Al-containing intermediate layer

1 AlGaN/GaN HEMT with Al-containing intermediate layer ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 136
1.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 136
1.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 137
1.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 140
1.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 141
1.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 144
2 AlGaN/GaN-HEMT-based integrable photodetector with Al-containing intermediate layer⋅⋅⋅⋅⋅ 145
2.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 145
2.2 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 146
2.3 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 146
2.4 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 150

CHAPTER 5 GaN-based HEMT and photodetectors based on MQW structure

1 AlGaN/GaN HEMT based on InGaN/GaN MQW structure ⋅⋅⋅⋅ 167
1.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 167
1.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 167
1.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 169
1.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 169
1.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 170
2 AlGaN/GaN MOS-HEMT based on InGaN/GaN MQW structure ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 171
2.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 171
2.2 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 172
2.3 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 177
3 Integrable MSM photodetectors based on InGaN/GaN MQW with in-situ cap layer ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 178
3.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 178
3.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 178
3.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 179
3.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 180
3.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 182

CHAPTER 6 GaN-based HEMT based on lattice-matched heterostructure

1 InAlN/AlN/GaN HEMT with ex-situ or in-situ SiN passivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 200
1.1 Introduction and motivation ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 200
1.2 Structure design and crystal growth ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 202
1.3 Process flow and device fabrication ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 206
1.4 Characterization and discussion ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 208
1.5 Summary ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 214

CHAPTER 7 GaN-based HEMT and photodetectors based on MQW structure

1 Conclusions ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 237
2 Future Work ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 240

References ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 243
Publication List ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 266
Vita (In English) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 270
Vita (In Chinese) ⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅⋅ 271
                                    

Chapter 1

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Chapter 2

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Chapter 3

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Chapter 4

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Chapter 5

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Chapter 6

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