本論文將探討原子序對穿透式背向散射電子繞射之X軸、Y軸與Z軸空間解析度的影響。以銀與鋁雙晶(bicrystal)試片，結合數位影像相關係數法進行空間解析度的量測。最後將兩者之空間解析度的結果與本實驗室的先前研究成果進行比較，包含與銅的穿透式EBSD空間解析度的比較以及銀、銅與鋁的穿透式與傳統式EBSD之空間解析度的比較。
由實驗所得對於銀在工作距離12 mm、試片傾斜50°、加速電壓30 kV以及試片厚度100 nm時，可得到最佳的X軸、Y軸與Z軸空間解析度，分別為18.9 nm、33.7 nm與22.7 nm；對於鋁則是在工作距離12 mm、試片傾斜60°、加速電壓15 kV以及試片厚度100 nm時，可得到最佳的X軸、Y軸與Z軸空間解析度，分別為22.8nm、36.6 nm與34.7 nm。
與純銅的穿透式EBSD空間解析度比較結果顯示，對於三種材料空間解析度皆隨著試片厚度減少而提升。對於較輕原子量的元素(如:鋁)，空間解析度隨著電壓由30kV下降至15kV而提升；較重原子(如:銅與銀)，空間解析度則是隨著電壓由15kV增加至30kV而提升。穿透式與傳統式EBSD空間解析度比較結果顯示，對於銅與銀在較高加速電壓20 kV ~ 30 kV下，穿透式EBSD空間解析度會優於傳統式EBSD；對於鋁則是在加速電壓10 kV ~ 30 kV範圍內，穿透式EBSD空間解析度皆會優於傳統式EBSD。

Bicrystals of silver and aluminum, combined with the digital image correlation (DIC) technique were investigated the effect of atomic number on spatial resolution of transmission Electron Backscatter Diffraction, also known as t-EBSD. The experimental factors included atomic number, working distance, tilt angle, accelerating voltage, and specimen thickness. For silver, the optimized spatial resolution of X (lateral), Y (longitudinal), and Z (depth) axes was 18.9, 33.7, and 22.7 nm respectively, with the accelerating voltage of 30 kV and the specimen thickness of 100 nm. For aluminum the optimized spatial resolution of X (lateral), Y (longitudinal), and Z (depth) axes was 22.8, 36.6, and 34.7 nm respectively under the voltage of 15 kV and the same thickness of 100 nm. The results showed that elements as light as aluminum would obtain higher spatial resolution along with the accelerating voltage decreasing from 30 kV down to 15 kV; on the contrary, heavier elements such as copper and silver, their resolution went lower with the voltage increasing from 15 kV up to 30 kV. The X spatial resolution of t-EBSD was higher than that of standard-EBSD for copper and silver above the accelerating voltage of 20 kV and 25 kV, respectively. The Y spatial resolution of t-EBSD was higher than that of standard-EBSD above the accelerating voltage between 20 kV and 25 kV for copper and silver. However, for aluminum, the X and Y spatial resolutions of t-EBSD was higher than that of standard-EBSD in range of 10 kV to 30 kV.

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