| 研究生: |
黃偉傑 Huang, Wei-Chieh |
|---|---|
| 論文名稱: |
利用共電鍍與硒化形成銅銦鎵硒薄膜太陽能電池於具有鉻阻障層的可撓式不鏽鋼基板上 A study of fabricating Cu(In,Ga)Se2 solar cells on stainless steel flexible substrate with Cr diffusion barrier layer by selenization of co-plated Cu-In-Ga precursors |
| 指導教授: |
彭洞清
Perng, Dung-Ching |
| 學位類別: |
碩士 Master |
| 系所名稱: |
電機資訊學院 - 微電子工程研究所 Institute of Microelectronics |
| 論文出版年: | 2012 |
| 畢業學年度: | 100 |
| 語文別: | 中文 |
| 論文頁數: | 74 |
| 中文關鍵詞: | 二硒化銅銦鎵 、電鍍 、薄膜太陽能電池 、可撓式 、不鏽鋼 |
| 外文關鍵詞: | Cu(In,Ga)Se2, Electrodeposition, thin film solar cell, flexible, stainless steel substrate |
| 相關次數: | 點閱:87 下載:1 |
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電鍍具有低成本、製程簡單、製造大面積材料的潛力,且可撓式太陽能電池可使產品多樣化,使其普及到民生用途上並擴大太陽能電池的需求,對於產業界之發展上有相當大的助益。本論文利用共電鍍方式製備Cu-In-Ga先驅層於具有鉻阻障層與Mo背電極的可撓式不鏽鋼基板上,再經由硒化的方式,形成二硒化銅銦鎵﹛Cu(In,Ga)Se2 ﹜吸收層,並製作成Cu(In,Ga)Se2薄膜太陽能電池。
在實驗中電鍍之電位與電流、電解液之Cu-In-Ga相對濃度、硒化溫度與時間等實驗參數皆會影響最終Cu(In,Ga) Se_2吸收層的薄膜品質,本論文透過X光繞射儀(XRD)、掃描式電子顯微鏡(SEM)、能量分散光譜儀(EDS)及薄膜測厚儀(Alpha step)與太陽光模擬與IV量測系統對製備的Cu(In,Ga)Se2薄膜進行晶體結構、表面形貌、元素組成成份、薄膜厚度與太陽能電池之電性進行分析。
最後成功地作出CIGS薄膜太陽能電池,由電流-電壓特性曲線顯示,此元件具有顯著之二極體特性,目前最佳元件之數據為:Voc=119.97 mV、Jsc = 33.24 mA /cm2、F.F. = 25.86 %、η = 1.03 %。
Electrodeposition (ED) is a simple and low cost process and has the potential for large scale production.Solar cells using flexible substrate can apply to portable devices and have the potential to boost the demand of photovoltaic module.It has considerable benefits to the photovoltaic industry. In this thesis,I used electrodeposition(ED) process to co-plat Cu-In-Ga precursors on a Mo/Cr coated flexible stainless steel substrate .In which,Cr served as a diffusion barrier layer and Mo was the back electrode of the solar cell. After selenization process, the Cu(In,Ga)Se2 absorber layer was formed and Cu(In,Ga)Se2 solar cells were successfully fabricated after CdS/i-ZnO/AZO and metal grids were deposited.
Several process parameters were studied in this thesis.The co- plating voltage,plating current,relative Cu-In-Ga concentrations in the plating solution,and selenization temperature and duration have significant influence on the properties and quality of the Cu(In,Ga)Se2 absorber layer. The study used a X-ray diffractometer for phase identification,a SEM to observe morphology of the thin films,a energy dispersive spectroscopy to analyze the absorber layer,a α-step to measure the thickness of the films and a current-voltage measurement system to analyze electrical characteristics.
Cu(In,Ga)Se2 thin film solar cells have been successfully fabricated on stainless steel flexible substrates. From the current-voltage characteristic plots,the device has remarkable diode characteristic. Currently, the best solar cell yields following photovoltaic parameters: Voc=119.97 mV、Jsc = 33.24 mA/cm2、F.F. = 25.86 %、η = 1.03 %
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