在本論文中，主要目的是利用MOCVD 成長雙級多重量子井結構。為了降低異質結構的應力，我們成長雙級多重量子井結構的LED，並改變該結構的週期數和量子井厚度，來觀察其光電特性及抗靜電特性。首先，我們調整 HT-QW 的週期數，亮度可提升約32％，且於20mA 的工作電流下，工作電壓由3.7V 降低至3.3V，同時也提升了抗靜電特性；接著，當增加 HT-QW 位障層的厚度，我們發現當厚度超過18.5nm 時，在人體模式下的抗靜電能力，可以有效地提升至-8KV，在此有高達61％的亮度提升，而其主要原因為使用雙級多重量子井結構來改善結晶品質所致。而在矽摻雜量子位障層的實驗中，由晶格常數的結果可以得知當Si-doping QB 週期數增加時,結構中的應力是跟隨著增加的。我們可以發現降低位障層厚度的實驗可以輕微的降低工作電壓和提升亮度，這應該是由於多重量子井結構中的穿隧效應所產生的影響。我們將探討矽摻雜量子位障層的週期數對LED 光電特性的影響。

In this thesis, the growth of the dual-stage multiple-quantum well (MQW) LEDs has been studied by metal organic chemical vapor phase deposition (MOCVD) technique. In order to improve the strain of the heterostructure, we grew dual-stage MQW LEDs with various period and barrier thickness to enhance the electrical characteristics and ESD reliability. Firstly, we changed the period of the dual-stage MQW structure. It was found that the output power of the LEDs increased by 32％, and the forward voltage decreased from 3.7 V to 3.3 V. Besides, the ESD reliability of the LEDs also enhanced. As the barrier thickness of the dual-stage MQW structure increases, we found that the ESD reliability of the LEDs at the human body mode was up to -8KV when the barrier thickness exceeded 18.5 nm. Also, the output power of the LEDs enhanced by 61%. This enhancement can be attributed to the improved crystal quality by using dual-stage MQW structure. The Si-doped barrier layers of MQW LEDs has also been performed here. Compared with three Si-doped samples, lattice constant indicates that Si-doping in the barrier layers increases the strain of the InGaN–GaN MQW LEDs. It was found that the forward voltage decreased slightly and higher output power from the thiner barrier sample. This result attributed to the electron tunneling effect, because thinner barrier of InGaN/GaN QWs. We have systematically investigated the characteristics of InGaN/GaN multiple quantum well LED structures with different numbers of doped QBs.

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