本研究製備多重通道氮化鋁鎵/氮化鎵高電子遷移率場效電晶體，藉由雷射干涉微影曝光搭配光電化學濕式蝕刻法完成多重通道結構的製作。透過光電化學濕式蝕刻法完成多重通道的蝕刻與閘極掘入結構以降低由反應式離子蝕刻機進行離子轟擊所造成的缺陷。
氧化鎵材料本身具有寬能隙、高介電係數、高崩潰電場與高化學穩定度等優異的特性。在低溫環境下成長的氧化鎵薄膜經驗證具有較低的缺陷足以提供高品質的表現，故本研究使用低溫氣相冷凝系統成長的氧化鎵薄膜作為元件的閘極絕緣層與表面鈍化層以提供良好的特性。
將平面式結構與500 nm多重通道結構比較可發現，在汲源極電壓(VDS)為10 V和閘源極電壓(VGS)為5 V下，平面式元件的汲源極飽和電流(IDSS)為506.7 mA/mm，而500 nm多重通道結構的汲源極飽和電流為802.1 mA/mm。平面式結構與多重通道結構之轉導特性在汲源極電壓為10 V時，最大轉移電導值(gm(max))分別為85.8 mS/mm與168.5 mS/mm，臨界電壓(Vth)從-2.8 V往正偏移至-2.2 V，次臨界擺幅(subthreshold swing, S.S.)也從380.2 mV/dec降低至175.9 mV/dec，閘極電壓為-100 V時之漏電流自7.7×10-7 A降至2.0×10-8 A。在高頻特性上，截止頻率(cutoff frequency, fT)與最大震盪頻率(maximum oscillation frequency, fMax)均有所提升，分別從5.7 GHz與11.0 GHz提升至6.0 GHz與13.2 GHz。
再進一步比較線寬為500 nm與300 nm的多重通道架構，當通道寬度持續減小，汲源極飽和電流為1000.1 mA/mm，最大轉移電導為243.3 mS/mm，臨界電壓將往正偏移至-1.1 V，次臨界擺幅則下降至113.1 mV/dec，閘極電壓為-100 V時之漏電流更下降至7.2×10-10 A，截止頻率與最大震盪頻率亦隨通道寬度遞減持續提升，分別從6.0 GHz與13.2 GHz提升至6.4 GHz與14.8 GHz。
在多重通道結構下的通道由於具有三面閘極結構，相較於平面式結構多了兩側橫向電場於二維電子氣之邊緣，故能夠有效利用通道內的環繞電場提升閘極控制能力並有較低的膝點電壓並促使臨界電壓往正偏移。當通道寬度縮減時，環繞電場效應更加明顯，更有效地控制二維電子氣密度，可進一步提升閘極控制力，並使漏電流減少，加快元件切換速度。

In this research, the AlGaN/GaN heterostructure was used to planar structure and multiple channel structure metal-oxide-semiconductor high-electron-mobility transis-tors with different channel width. The multiple channel structure was fabricated by laser interference photolithography system and photoelectrochemical etching method. It was convenient to adjust the incident angle of the laser system to define different channel width. The photoelectrochemical etching method can prevent the surface damage to the plasma.
Gallium oxide has the advantage of high dielectric constant, high breakdown field, and high thermal and chemical stability. The gate dielectric layer of the devices was gal-lium oxide (Ga2O3) thin film deposited by vapor cooling condensation system in low temperature owing to its low defect and high quality performance.
Combining the advantages mentioned above, we successfully fabricated the multi-ple channel structure of different channel width metal-oxide-semiconductor high-electron-mobility transistors. The electrical characteristics of the devices were an-alyzed in order to verify the advantages of multiple channel structured devices.

第一章
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第四章
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