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研究生： 洪惠全
HUNG, HUI-CHUAN
論文名稱： 互補式金氧半導體積體電路故障分析技術比較
The Comparison of Failure Analysis Technologies in Complementary Metal Oxide Semiconductor Integrated Circuit
指導教授： 張守進
Chang, Shoou-Jinn
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 電機工程學系碩士在職專班
Department of Electrical Engineering (on the job class)
論文出版年： 2006
畢業學年度： 94
語文別： 英文
論文頁數： 82
中文關鍵詞： 被動式電壓對比 、微光偵測術 、熱束產生電流變化術 、互補式金氧半導體 、積體電路 、液晶偵熱術 、故障分析 、螢光微熱偵測術
外文關鍵詞： Failure Analysis, Passive voltage contrast, Fluorescent micro-thermal microscopy, Integrated Circuit, Thermal beam induced current variation, Liquid crystal microscopy, Emission microscopy, Complementary Metal Oxide Semiconductor
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    • 　　半導體工業開始於 20 世紀下半, 並迅速成長. 整個業界的產能很快在 20 世紀末超過市場的消耗量. 產品的生命週期也變得更短壓縮到獲利. 特別是產業垂直分工, 更降低半導體工業界的進入門檻, 導致上市時程成為關鍵. 目前在電腦的輔助下可以很精準的控制設計和生產時程, 但是第一批的良率常常非常低. 導致上市時程延長, 減低獲利, 甚至於賠錢. 低良率可能肇因於設計, 製造或兩者的相互作用並且形成高阻值或漏電. 故障分析成找尋高阻值或漏電的成因在良率提升上扮演相當重要的角色.

    　　故障分析的技術如液晶偵熱術 (liquid crystal microscopy), 螢光微熱偵測術 (fluorescent micro-thermal microscopy), 微光偵測術 (emission microscopy), 熱束產生電流變化術 (thermal beam induced current variation), 和被動式電壓對比 (passive voltage contrast) 被用來定位故障位置, 本論文探討數個真實案例的故障機制和找到的缺陷, 以比較各故障分析術的優缺點.

    　　The industry of integrated circuit (IC) semiconductor started at the middle of twenty century and grows fast at the second half century. The capacity of the IC industry exceeds the consumption of the market at the end of twenty century. The cycle time of a product getting shorter compresses the profile. Especially the vertical division of semiconductor industry decreases the barrier of entry. The time-to-market becomes critical to the profit. The design and manufacturing period with computer-aided automation are well controlled and very precisely, but yield rate of the first cut always get low yield. This violently extends the time-to-market, reduces profit or even losses money. The low yield may comes from design, manufacturing or interaction of both and almost induced by high resistance or leakage circuit. Failure analysis to identify the cause of high resistance and leakage plays a significant role to improve the yield.

    　　The failure analysis technologies, liquid crystal microscopy, fluorescent micro-thermal microscopy, emission microscopy, thermal beam induced current variation, and passive voltage contrast are used to locate the failure site. Several real cases are demonstrated in this thesis to discuss the possible failure mechanism and find out the defect, in order to compare these failure analysis technologies.

    Abstract 1 1. Introduction 2 History of IC Industry and Failure Analysis 2 2. Behavior Of Failure: 5 2.1. Heat Generation 5 2.2. Light Emission 7 3. Failure Site Localization 8 3.1. Liquid Crystal Microscopy 8 i. Theory 8 ii. System 10 iii. Operating Procedure 11 Case1, Power Short 11 Case2, Functional Test Failure 13 iv. Advantage 15 v. Limitation 15 3.2. Fluorescent Micro-thermal Microscopy 16 i. Theory 16 ii. System 17 iii. Operating Procedure 18 Case1, Metal Test Key Short 19 Case2, Memory Functional Test Failure 21 vi. Advantage 22 vii. Limitation 23 3.3. Thermal Beam Induced Current Variation 23 i. Theory 23 ii. Seebeck Effect 25 iii. Application 27 iv. System 29 v. Case1, Test Structure Leakage 31 vi. Case2, Metal Inter-connector VIA High Resistance 33 vii. Case3, Seebeck Effect on N-doped, P-doped Contact 34 viii. Case4, Functional Failure 36 ix. Case5, Gate Floating CMOS 37 x. Case6, Scan Function Failure 39 xi. Case7, Normal Functional Failure 40 viii. Advantage 41 ix. Limitation 41 3.4. Emission Microscopy 41 i. Theory 41 ii. Hot carrier emission 41 iii. Combination Emission 44 iv. Blackbody Radiation 45 v. System 48 vi. Operating Procedure 50 vii. Case1, Functional Failure 50 viii. Case2, Self-functional Test Failure 53 ix. Case3, JEDEC Functional Test Failure 57 x. Advantage 59 xi. Limitation 60 3.5. Passive Voltage Contrast: 60 i. Basic Structure of SEM 60 ii. Theory 62 iii. Secondary Electron Yield 64 iv. Passive Voltage Contrast 67 v. Passive Voltage Contrast in CMOS IC 69 vi. Case1, Embedded Memory Failure 71 vii. Case2, Functional Failure 72 viii. Case3, Continuity Failure 73 xii. Advantage 74 xiii. Limitation 74 4. Summary and future work 75 Reference 76

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