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研究生： 張介斌
Chang, Chieh-Ping
論文名稱： 低雜訊砷化鋁鎵/砷化銦鎵/砷化鎵與磷化銦鎵/砷化銦鎵/砷化鎵假形高速電子移動電晶體在直流加速應力下受熱電子影響之研究
The Study of Hot Electron Effects under Accelerated DC Stresses on Low-Noise AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs PHEMTs
指導教授： 王永和
Wang, Yeong-Her
洪茂峰
Houng, Man-Phon
學位類別： 碩士
Master
系所名稱： 電機資訊學院 - 微電子工程研究所
Institute of Microelectronics
論文出版年： 2004
畢業學年度： 92
語文別： 中文
論文頁數： 74
中文關鍵詞： 假形高速電子移動電晶體
外文關鍵詞： Pseudomorphic High Electron Mobility Transistor
相關次數： 點閱：59  下載：2 
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    • 　　在本文中，我們分別描述了在經過熱電子應力測試前後閘極尺寸0.25µm x 160µm的砷化鋁鎵和磷化銦鎵假形高速電子移動電晶體的直流和雜訊特性，我們發現元件之閘極漏電流和最小雜訊指數皆有改善(變好)之情況，進而發現InGaP PHEMT元件的變化比AlGaAs PHEMT元件小，因此InGaP PHEMT元件有較好之可靠度。

    　　我們也對此兩種元件做了不同條件的熱電子應力測試，從實驗結果發現，利用大的汲極到閘極間電場和適當的通道電流當應力測試條件，可更明顯地觀察到因撞擊游離現象所造成之影響，如閘極漏電流降低、閘極與汲極間之蕭特基接面漏電流降低和最小雜訊指數變好(降低)，同時相較於AlGaAs PHEMT元件，InGaP PHEMT元件並無造成更明顯的變化，因此InGaP PHEMT元件的穩定性相當好，並且可靠度較高。

    　　Under accelerated DC stresses, the DC characteristics and noise performance of AlGaAs/InGaAs/GaAs and InGaP/InGaAs/GaAs low noise PHEMTs with the gate dimension 0.25 x 160 µm2 are investigated, It is found that the gate-leakage current and minimum noise figure can be effectively improved. The variations of InGaP PHEMTs are less than AlGaAs PHEMTs. Therefore, the higher reliability is found on InGaP PHEMTs.

    　　Compared with different hot-electron stress conditions, we can find that the high electric field from drain to gate and the suitable channel current can be evidently observed by the effects of impact ionization phenomenon, such as the gate-leakage current decreases and the minimum noise figure improvement. As compared for the AlGaAs PHEMTs, the less variation in the InGaP PHEMTs can be observed for better reliability in low noise application.

    英文摘要................................................................i 中文摘要................................................................vi 圖目錄..................................................................viii 第一章 緒論.........................................................1 1.1 研究動機........................................................1 1.2 章節概要........................................................1 第二章 原理及實驗步驟...............................................3 2.1 PHEMT元件基本操作原理...............................................3 2.2 PHEMT磊晶結構.......................................................5 2.3 雜訊指數基本原理....................................................9 2.4 實驗步驟............................................................11 2.4.1 雜訊指數校正...............................................12 2.4.2 雜訊指數量測...............................................13 2.4.3 量測步驟...................................................13 2.4.4 儀器穩定度測試.............................................14 第三章 直流加速應力下低雜訊砷化鋁鎵PHEMT受熱電子之影響及測試........23 3.1 低雜訊砷化鋁鎵/砷化銦鎵/砷化鎵PHEMT之結構...........................23 3.2 熱電子對低雜訊砷化鋁鎵PHEMT影響之測試...............................24 3.2.1 由熱電子與撞擊游離所造成之退化現象................................24 3.2.2 Kink效應..........................................................25 3.2.3閘極與汲極間之崩潰偏移.............................................26 3.2.4在飽和區時之汲極到源極電流(IDS)的增加..............................27 3.2.5 鐘形閘極漏電流特性曲線..........................................27 3.2.6 閘極與汲極間之蕭特基接面........................................30 3.3 不同條件下的熱電子測試對低雜訊砷化鋁鎵PHEMT影響之比較...............31 3.3.1 閘極漏電流比較....................................................32 3.3.2 閘極與汲極間之蕭特基接面漏電流比較................................33 3.3.3 最小雜訊指數比較..................................................34 3.4 總結.............................................................35 第四章 直流加速應力測試下低雜訊磷化銦鎵PHEMT受熱電子之影響及測試....52 4.1 低雜訊磷化銦鎵/砷化銦鎵/砷化鎵PHEMT之結構...........................53 4.2 熱電子對低雜訊磷化銦鎵PHEMT影響之測試...............................53 4.2.1 在飽和區時之汲極到源極電流(IDS)的增加.............................53 4.2.2 鐘形閘極漏電流特性曲線............................................54 4.2.3 閘極與汲極間之蕭特基接面..........................................55 4.3 不同條件下的熱電子測試對低雜訊磷化銦鎵PHEMT影響之比較...............56 4.3.1 閘極漏電流比較....................................................56 4.3.2 閘極與汲極間之蕭特基接面漏電流比較................................57 4.4 總結................................................................58 第五章 結論.........................................................70 參考文獻................................................................71

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