本論文主要在於研究改善三五族化合物半導體太陽能電池效率之方法，其中三五族太陽能電池之轉換效率於2011年已創下超過40%之紀錄，將其互相串接結合的特性，以及優越的抗輻射能力，使得三五族太陽能電池不論是應用在日常生活中亦或是在外太空的酬載都有很大的發展性。首先利用有機金屬化學氣相沉積法成長較簡易之三五族單接面砷化鎵太陽能電池結構，以此作為太陽能電池之基本結構基底。至於如何再進一步地提高太陽能電池轉換效率，亦有許多方案被提出。一般來說，在不改變太陽能電池結構之下，會在太陽能電池表面製備一層抗反射層以增加入射光之光子量，進而使得照光產生之電子電洞對增加以提升光電流，亦提高太陽能電池轉換效率。有鑑於此本研究著重於在砷化鎵太陽能電池表面製備氧化鋅奈米結構抗反射層以改善入射光之反射率與利用氧化鋅系列摻雜鋁之透明導電膜改善載子傳輸特性。
首先根據等效介質理論計算與分析出最適當的奈米結構抗反射層型貌與折射率條件再使用成本較低之水溶液法成長氧化鋅奈米線、奈米柱與奈米尖錐狀之抗反射層於單接面與多接面砷化鎵太陽能電池結構上並探討其效應。本技術創作之目的為在太陽能電池元件之表面上，利用一低溫、低成本水溶液成長方式，成長具週期性之氧化鋅奈米結構圖案陣列，此奈米圖案包括奈米線、奈米柱與奈米尖錐狀;以高折射率之奈米結構陣列型貌呈現於太陽能電池元件表面，可以有效匹配元件表面與空氣的折射率差異，並有助於入射光對於元件的進入與取出，尤其奈米尖錐狀陣列，產生折射率漸變的特性較為明顯，藉以提升太陽能電池的光電轉換效率。將之用於太陽能電池元件上，因元件表面折射率問題，會有部分反射而降低太陽光進入元件的光通量，而此奈米陣列結構可有效作為抗反射層之功用，將入射光藉由二次折射而入射到元件結構中之吸收層，使得太陽能電池元件之光轉換效率得以大幅提升，並藉以提高元件之外部量子效率。其中奈米尖錐狀結構抗反射能力可將平均加權反射率降低至12 %同時提升總轉換效率為67%。比較三種不同之奈米結構抗反射層於砷化鎵太陽能電池效率提升之多寡，使其將來可應用在多種太陽能電池上面。另一方面利用氧化鋅系列透明導電膜製備於砷化鎵太陽能電池上達到光入射抗反射功能及減少金屬光柵與元件之遮蔽率。氧化鋅材料除了高透光性、高折射率外，還可經由摻雜金屬提高導電特性，增加入射光產生載子的收集效率。
本研究成功成長氧化鋅奈米結構於砷化鎵系列太陽能電池上作為抗反射層功用，且本研究技術不需真空設備與複雜製程，即可製作出高折射率奈米尖錐狀結構，可輕易地提升太陽能電池之轉換效率，使太陽能電池在生活上的實用價值顯著提升，有助於拓展太陽能電池的應用領域與普及率。

The III-V compound semiconductor solar cell is being discussed since it has achieved a world record of 40% conversion efficiency in 2011. Considering the unlimited development of series connection and excellent resistance to radiation, III-V compound solar cell is granted with great expandability among daily life and out-space applications. Metal organic chemical vapor deposition is first employed to fabricate the simple structure of III-V single junction gallium arsenide (GaAs) solar cell, which is used as the basic structure for solar cells. As for further enhancement of solar cell efficiency, many methods were proposed. In general, without altering the structure of solar cells, an antireflection layer is fabricated on the surface to increase the absorption rate of incident light, thus raises the number of electron-hole pairs for light current and the solar cell efficiency is then increased. Therefore, we focus our studies on the fabrication of zinc oxide (ZnO) nanostructure as antireflection layer for decreasing the reflectance of incident light and the growth of ZnO nanostructures on GaAs based solar cells. Obviously, it could increase the conversion efficiency and short current density of solar devices by adding the ZnO nanostructure antireflection layer; on the other hand, due to the light blocking behavior of metal finger contacts, the area of metal contacts should be minimized. Thus we utilize the transparent conductive zinc oxide film doped with aluminum to deposit on the GaAs solar device as current spreading layer for increasing the photocurrent to transmit to the metal contact and compensating the increased series resistance of solar devices.
Firstly, related literature that uses calculation of effective medium theory was consulted to find out the most appropriate nanostructure for antireflection layer and effective refractive index. Then, a cheaper method of solution method was used to grow antireflection layers made from ZnO nanowire, nanorod, and nanocone at single- junction and multi-junction GaAs solar cell structure, discussing its properties. The purpose of the technique is to supply a cheaper and simpler method to fabricate antireflection layer on solar device surface. By the solution grow method, we could generate uniform ZnO nano-pattern including nanowire, nanorod, and nanocone. With the higher refractive nanostructure array on device surface, it would overcome the refractive index difference between air and device surface. However, the amount of incident light would be larger so that the conversion efficiency of solar devices would be increase by applying ZnO nanostructure antireflection layer. In particular, the tapered nanostructure arrays possess the better property of graded refractive index and it could enhance the conversion efficiency of solar devices as well. Besides, the reflection of nanocone structure could lower the average solar weighted reflectance to 12% while raising the total efficiency to 67%. The effect of increasing GaAs solar cell efficiency is compared among these three types of nanostructures to apply them in various types of solar cells. Also, ZnO-based transparent conductive oxide film was used to fabricate GaAs solar cell to achieve antireflection ability, the incident of light metal grating, and components shielding rate. ZnO material provides high light transmission, high refraction index, and high conductivity with metal doping to increase collection rate of light carrier.
By utilizing surface antireflection layer could effortlessly increase the efficiency of solar cells, which improve its practical values in daily lives and expand the applications and popularity of solar cells as well.

Chapter 1
[1] P. C. Yu, et al., "Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns," Advanced Materials, vol. 21, pp. 1618-+, Apr 27 2009.
[2] H. Sugiura, et al., "Double Heterostructure Gaas Tunnel Junction for a Algaas/Gaas Tandem Solar-Cell," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 27, pp. 269-272, Feb 1988.
[3] A. W. Bett, et al., "III-V compounds for solar cell applications," Applied Physics a-Materials Science & Processing, vol. 69, pp. 119-129, Aug 1999.
[4] M. Yamaguchi, et al., "Novel materials for high-efficiency III-V multi-junction solar cells," Solar Energy, vol. 82, pp. 173-180, 2008.
[5] M. Yamaguchi, et al., "Super high-efficiency multi-junction and concentrator solar cells," Solar Energy Materials and Solar Cells, vol. 90, pp. 3068-3077, Nov 23 2006.
[6] A. Shah, et al., "Photovoltaic technology: The case for thin-film solar cells," Science, vol. 285, pp. 692-698, Jul 30 1999.
[7] M. Z. Jacobson, "Review of solutions to global warming, air pollution, and energy security," Energy & Environmental Science, vol. 2, pp. 148-173, 2009.
[8] G. J. Bauhuis, et al., "26.1% thin-film GaAs solar cell using epitaxial lift-off," Solar Energy Materials and Solar Cells, vol. 93, pp. 1488-1491, Sep 2009.
[9] D. J. Friedman, "Progress and challenges for next-generation high-efficiency multijunction solar cells," Current Opinion in Solid State & Materials Science, vol. 14, pp. 131-138, Dec 2010.
[10] C. H. Sun, et al., "Biomimetic subwavelength antireflective gratings on GaAs," Optics Letters, vol. 33, pp. 2224-2226, Oct 1 2008.
[11] H. B. Xu, et al., "Biomimetic Antireflective Si Nanopillar Arrays," Small, vol. 4, pp. 1972-1975, Nov 2008.
[12] S. J. An, et al., "Enhanced light output of GaN-based light-emitting diodes with ZnO nanorod arrays," Applied Physics Letters, vol. 92, pp. -, Mar 24 2008.
[13] K. K. Kim, et al., "Enhanced light extraction efficiency of GaN-based light-emitting diodes with ZnO nanorod arrays grown using aqueous solution," Applied Physics Letters, vol. 94, pp. -, Feb 16 2009.
[14] S. L. Diedenhofen, et al., "Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods," Advanced Materials, vol. 21, pp. 973-+, Mar 6 2009.
[15] P. Lalanne and G. M. Morris, "Antireflection behavior of silicon subwavelength periodic structures for visible light," Nanotechnology, vol. 8, pp. 53-56, Jun 1997.
[16] C. H. Sun, et al., "Broadband moth-eye antireflection coatings on silicon," Applied Physics Letters, vol. 92, pp. -, Feb 11 2008.
[17] S. R. Kennedy and M. J. Brett, "Porous broadband antireflection coating by glancing angle deposition," Applied Optics, vol. 42, pp. 4573-4579, Aug 1 2003.
[18] J. Q. Xi, et al., "Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection," Nature Photonics, vol. 1, pp. 176-179, Mar 2007.
[19] Y. J. Lee, et al., "ZnO nanostructures as efficient antireflection layers in solar cells," Nano Letters, vol. 8, pp. 1501-1505, May 2008.
[20] Y. Ono, et al., "Antireflection Effect in Ultrahigh Spatial-Frequency Holographic Relief Gratings," Applied Optics, vol. 26, pp. 1142-1146, Mar 15 1987.
[21] A. S. Hovhannisyan, "Single-Layer Antireflection Coatings for GaAs Solar Cells," Journal of Contemporary Physics-Armenian Academy of Sciences, vol. 43, pp. 136-138, Jun 2008.

Chapter 2
[1] P. Würfel and U. Würfel, Physics of solar cells : from basic principles to advanced concepts, 2nd, updated and expanded ed. Weinheim: Wiley-VCH, 2009.
[2] J. Nelson, The physics of solar cells. London
River Edge, NJ: Imperial College Press ;
Distributed by World Scientific Pub. Co., 2003.
[3] A. S. Hovhannisyan, "Single-Layer Antireflection Coatings for GaAs Solar Cells," Journal of Contemporary Physics-Armenian Academy of Sciences, vol. 43, pp. 136-138, Jun 2008.
[4] A. Yariv and P. Yeh, Photonics : optical electronics in modern communications, 6th ed. New York: Oxford University Press, 2007.
[5] V. M. Aroutiounian, et al., "Use of Porous Silicon for Double- and Triple-Layer Antireflection Coatings in Silicon Photovoltaic Converters," Journal of Contemporary Physics-Armenian Academy of Sciences, vol. 43, pp. 72-76, Apr 2008.
[6] J. Q. Xi, et al., "Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection," Nature Photonics, vol. 1, pp. 176-179, Mar 2007.
[7] H. Sai, et al., "Wide-angle antireflection effect of subwavelength structures for solar cells," Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, vol. 46, pp. 3333-3336, Jun 2007.
[8] W. Zhou, et al., "Microstructured surface design for omnidirectional antireflection coatings on solar cells," Journal of Applied Physics, vol. 102, pp. -, Nov 15 2007.
[9] O. Y. Borkovskaya, et al., "Computer simulation of the photocurrent collection coefficient in solar cells based on the textured thin-film AlxGa1-xAs-GaAs heterostructure," Thin Solid Films, vol. 451-52, pp. 402-407, Mar 22 2004.
[10] S. Sakka, Handbook of sol-gel science and technology : processing, characterization, and applications. Boston: Kluwer Academic Publishers, 2005.
[11] S. Sakka, Sol-gel science and technology : topics in fundamental research and applications. Boston: Kluwer Academic Publishers, 2003.
[12] E. J. A. Pope, et al., Sol-gel science and technology. Westerville, Ohio: American Ceramic Society, 1995.
[13] J. H. Choi, et al., "Effect of Sintering Time at Low Temperature on the Properties of IGZO TFTs Fabricated by Using the Sol-gel Process," Journal of the Korean Physical Society, vol. 57, pp. 1836-1841, Dec 2010.
[14] L. Vayssieres, et al., "Three-dimensional array of highly oriented crystalline ZnO microtubes," Chemistry of Materials, vol. 13, pp. 4395-+, Dec 2001.
[15] Y. J. Wang, et al., "Optimization of PECVD silicon oxynitride films for anti-reflection coating," Vacuum, vol. 72, pp. 345-349, Nov 24 2003.
[16] Y. J. Lee, et al., "ZnO nanostructures as efficient antireflection layers in solar cells," Nano Letters, vol. 8, pp. 1501-1505, May 2008.
[17] M. G. Moharam and T. K. Gaylord, "Rigorous Coupled-Wave Analysis of Metallic Surface-Relief Gratings," Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 3, pp. 1780-1787, Nov 1986.
[18] H. Yoshikawa and S. Adachi, "Optical constants of ZnO," Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, vol. 36, pp. 6237-6243, Oct 1997.
[19] W. H. Southwell, "Pyramid-Array Surface-Relief Structures Producing Antireflection Index Matching on Optical-Surfaces," Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 8, pp. 549-553, Mar 1991.
[20] M. Born and E. Wolf, Principles of optics : electromagnetic theory of propagation, interference and diffraction of light, 6th ed. Oxford ; New York: Pergamon Press, 1980.
[21] M. G. Moharam, et al., "Stable Implementation of the Rigorous Coupled-Wave Analysis for Surface-Relief Gratings - Enhanced Transmittance Matrix Approach," Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 12, pp. 1077-1086, May 1995.
[22] L. F. Li, "Use of Fourier series in the analysis of discontinuous periodic structures," Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 13, pp. 1870-1876, Sep 1996.
[23] S. C. Pillai, et al., "Microstructural analysis of varistors prepared from nanosize ZnO," Materials Science and Technology, vol. 20, pp. 964-968, Aug 2004.

Chapter 3
[1] D. Kieven, et al., "ZnO nanorod arrays as an antireflective coating for Cu(In,Ga)Se(2) thin film solar cells," Progress in Photovoltaics, vol. 18, pp. 209-213, May 2010.
[2] A. Luque and S. Hegedus, Handbook of photovoltaic science and engineering. Hoboken, NJ: Wiley, 2003.
[3] O. V. Roos, "Simple Theory of Back Surface Field (Bsf) Solar-Cells," Journal of Applied Physics, vol. 49, pp. 3503-3511, 1978.
[4] J. Nelson, The physics of solar cells. London
River Edge, NJ: Imperial College Press ;
Distributed by World Scientific Pub. Co., 2003.
[5] J. Zhao, et al., "24 Percent Efficient Silicon Solar-Cells with Double-Layer Antireflection Coatings and Reduced Resistance Loss," Applied Physics Letters, vol. 66, pp. 3636-3638, Jun 26 1995.
[6] D. Poitras and J. A. Dobrowolski, "Toward perfect antireflection coatings. 2. Theory," Applied Optics, vol. 43, pp. 1286-1295, Feb 20 2004.
[7] J. A. Dobrowolski, et al., "Toward perfect antireflection coatings: numerical investigation," Applied Optics, vol. 41, pp. 3075-3083, Jun 1 2002.
[8] P. B. Clapham and M. C. Hutley, "Reduction of Lens Reflection by Moth Eye Principle," Nature, vol. 244, pp. 281-282, 1973.
[9] G. H. Li, et al., "General in situ chemical etching synthesis of ZnO nanotips array," Applied Physics Letters, vol. 93, Oct 13 2008.
[10] S. R. Kennedy and M. J. Brett, "Porous broadband antireflection coating by glancing angle deposition," Applied Optics, vol. 42, pp. 4573-4579, Aug 1 2003.
[11] G. M. Wu, et al., "Preparation of scratch-resistant nano-porous silica films derived by sol-gel process and their anti-reflective properties," Journal of Materials Science & Technology, vol. 19, pp. 299-302, Jul 2003.
[12] K. H. Bang, et al., "Comparative studies on structural and optical properties of ZnO films grown on c-plane sapphire and GaAs (001) by MOCVD," Solid State Communications, vol. 126, pp. 623-627, Jun 2003.

Chapter 4
[1] T. Lohmuller, et al., "Biomimetic interfaces for high-performance optics in the deep-UV light range," Nano Letters, vol. 8, pp. 1429-1433, May 2008.
[2] Y. J. Lee, et al., "ZnO nanostructures as efficient antireflection layers in solar cells," Nano Letters, vol. 8, pp. 1501-1505, May 2008.
[3] J. A. Dobrowolski and L. Li, "Design of Optical Coatings for 3 or More Separated Spectral Regions," Applied Optics, vol. 34, pp. 2934-2940, Jun 1 1995.
[4] S. L. Diedenhofen, et al., "Broad-band and Omnidirectional Antireflection Coatings Based on Semiconductor Nanorods," Advanced Materials, vol. 21, pp. 973-+, Mar 6 2009.
[5] D. Poitras and J. A. Dobrowolski, "Toward perfect antireflection coatings. 2. Theory," Applied Optics, vol. 43, pp. 1286-1295, Feb 20 2004.
[6] D. G. Stavenga, et al., "Light on the moth-eye corneal nipple array of butterflies," Proceedings of the Royal Society B-Biological Sciences, vol. 273, pp. 661-667, Mar 22 2006.
[7] M. G. Moharam and T. K. Gaylord, "Rigorous Coupled-Wave Analysis of Metallic Surface-Relief Gratings," Journal of the Optical Society of America a-Optics Image Science and Vision, vol. 3, pp. 1780-1787, Nov 1986.
[8] P. C. Yu, et al., "Efficiency Enhancement of GaAs Photovoltaics Employing Antireflective Indium Tin Oxide Nanocolumns," Advanced Materials, vol. 21, pp. 1618-+, Apr 27 2009.
[9] J. K. Kim, et al., "Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact," Advanced Materials, vol. 20, pp. 801-+, Feb 18 2008.
[10] A. B. Djurisic and Y. H. Leung, "Optical properties of ZnO nanostructures," Small, vol. 2, pp. 944-961, Aug 2006.
[11] W. J. Fan, et al., "Band parameters and electronic structures of wurtzite ZnO and ZnO/MgZnO quantum wells," Journal of Applied Physics, vol. 99, pp. -, Jan 1 2006.
[12] M. H. Huang, et al., "Catalytic growth of zinc oxide nanowires by vapor transport," Advanced Materials, vol. 13, pp. 113-116, Jan 16 2001.
[13] G. Z. Wang, et al., "Synthesis of ZnO hexagonal columnar pins by chemical vapor deposition," Materials Letters, vol. 59, pp. 3870-3875, Dec 2005.
[14] L. Vayssieres, "Growth of arrayed nanorods and nanowires of ZnO from aqueous solutions," Advanced Materials, vol. 15, pp. 464-466, Mar 4 2003.
[15] L. E. Greene, et al., "Low-temperature wafer-scale production of ZnO nanowire arrays," Angewandte Chemie-International Edition, vol. 42, pp. 3031-3034, 2003.
[16] J. B. Cui, et al., "Low-temperature growth and field emission of ZnO nanowire arrays," Journal of Applied Physics, vol. 97, pp. -, Feb 15 2005.
[17] H. X. Li, et al., "Sol-gel preparation of transparent zinc oxide films with highly preferential crystal orientation," Vacuum, vol. 77, pp. 57-62, Dec 17 2004.
[18] Zhongguo cai liao ke xue xue hui., "Materials chemistry and physics," ed. Lausanne, Switzerland
New York, NY: Elsevier Sequoia S.A. ;
Elsevier Science Publishers, 1983, p. v.
[19] J. S. Huang and C. F. Lin, "Influences of ZnO sol-gel thin film characteristics on ZnO nanowire arrays prepared at low temperature using all solution-based processing," Journal of Applied Physics, vol. 103, pp. -, Jan 1 2008.
[20] S. O'Brien, et al., "ZnO thin films prepared by a single step sol-gel process," Thin Solid Films, vol. 516, pp. 1391-1395, Feb 15 2008.
[21] S. Muthukumar, et al., "Selective MOCVD growth of ZnO nanotips," Ieee Transactions on Nanotechnology, vol. 2, pp. 50-54, Mar 2003.
[22] Y. Ono, et al., "Antireflection Effect in Ultrahigh Spatial-Frequency Holographic Relief Gratings," Applied Optics, vol. 26, pp. 1142-1146, Mar 15 1987.
[23] J. Y. Jung, et al., "A strong antireflective solar cell prepared by tapering silicon nanowires," Optics Express, vol. 18, pp. A286-A292, Sep 13 2010.
[24] J. Zhu, et al., "Optical Absorption Enhancement in Amorphous Silicon Nanowire and Nanocone Arrays," Nano Letters, vol. 9, pp. 279-282, Jan 2009.
[25] D. Buie, et al., "Full day simulations of anti-reflection coatings for flat plate silicon photovoltaics," Solar Energy Materials and Solar Cells, vol. 81, pp. 13-24, Jan 25 2004.
[26] J. Y. Chen and K. W. Sun, "Enhancement of the light conversion efficiency of silicon solar cells by using nanoimprint anti-reflection layer," Solar Energy Materials and Solar Cells, vol. 94, pp. 629-633, Mar 2010.
[27] A. AlBustani and M. Y. Feteha, "Triple heterojunction AlGaAs-GaAs solar cells with front V-groove surface," Renewable Energy, vol. 8, pp. 348-353, May-Aug 1996.
[28] M. F. Schubert, et al., "Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm," Optics Express, vol. 16, pp. 5290-5298, Apr 14 2008.

Chapter 5
[1] T. A. Gessert, et al., "Practical Guidelines for Grid Metallization in Photovoltaic Solar-Cell Research," Solar Cells, vol. 30, pp. 459-472, May 1991.
[2] U. Ozgur, et al., "A comprehensive review of ZnO materials and devices," Journal of Applied Physics, vol. 98, pp. -, Aug 15 2005.
[3] J. Zhou, et al., "Flexible piezotronic strain sensor," Nano Letters, vol. 8, pp. 3035-3040, Sep 2008.
[4] Y. L. Wu, et al., "Surface modifications of ZnO quantum dots for bio-imaging," Nanotechnology, vol. 18, pp. -, May 30 2007.
[5] S. D. Lee, et al., "Morphology Control and Electroluminescence of ZnO Nanorod/GaN Heterojunctions Prepared Using Aqueous Solution," Journal of Physical Chemistry C, vol. 113, pp. 8954-8958, May 21 2009.
[6] W. Beyer, et al., "Transparent conducting oxide films for thin film silicon photovoltaics," Thin Solid Films, vol. 516, pp. 147-154, Dec 3 2007.
[7] J. C. Lee, et al., "Superstrate p-i-n a-Si : H solar cells on textured ZnO : Al front transparent conduction oxide," Superlattices and Microstructures, vol. 42, pp. 369-374, Jul-Dec 2007.
[8] T. Minami, "Transparent conducting oxide semiconductors for transparent electrodes," Semiconductor Science and Technology, vol. 20, pp. S35-S44, Apr 2005.
[9] S. J. Pearton, et al., "Recent progress in processing and properties of ZnO," Progress in Materials Science, vol. 50, pp. 293-340, Mar 2005.
[10] T. J. Coutts, et al., "Search for improved transparent conducting oxides: A fundamental investigation of CdO, Cd2SnO4, and Zn2SnO4," Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films, vol. 18, pp. 2646-2660, Nov-Dec 2000.
[11] S. Fay, et al., "Rough ZnO layers by LP-CVD process and their effect in improving performances of amorphous and microcrystalline silicon solar cells," Solar Energy Materials and Solar Cells, vol. 90, pp. 2960-2967, Nov 23 2006.
[12] B. Y. Oh, et al., "Transparent conductive Al-doped ZnO films for liquid crystal displays," Journal of Applied Physics, vol. 99, pp. -, Jun 15 2006.
[13] T. Miyata, et al., "High sensitivity chlorine gas sensors using multicomponent transparent conducting oxide thin films," Sensors and Actuators B-Chemical, vol. 69, pp. 16-21, Sep 10 2000.
[14] M. A. Martinez, et al., "Deposition of transparent and conductive Al-doped ZnO thin films for photovoltaic solar cells," Solar Energy Materials and Solar Cells, vol. 45, pp. 75-86, Jan 1 1997.
[15] J. H. Hu and R. G. Gordon, "Textured Aluminum-Doped Zinc-Oxide Thin-Films from Atmospheric-Pressure Chemical-Vapor Deposition," Journal of Applied Physics, vol. 71, pp. 880-890, Jan 15 1992.
[16] R. J. Molnar, et al., "Blue-Violet Light-Emitting Gallium Nitride P-N-Junctions Grown by Electron-Cyclotron Resonance-Assisted Molecular-Beam Epitaxy," Applied Physics Letters, vol. 66, pp. 268-270, Jan 16 1995.
[17] S. P. Liu, et al., "Highly Ultraviolet-Transparent ZnO:Al Conducting Layers by Pulsed Laser Deposition," Journal of the Electrochemical Society, vol. 158, pp. K127-K130, 2011.
[18] M. A. Kaid and A. Ashour, "Preparation of ZnO-doped Al films by spray pyrolysis technique," Applied Surface Science, vol. 253, pp. 3029-3033, Jan 15 2007.
[19] M. Wang, et al., "Optical and photoluminescent properties of sol-gel Al-doped ZnO thin films," Materials Letters, vol. 61, pp. 1118-1121, Feb 2007.
[20] M. Chen, et al., "Properties of reactive magnetron sputtered ITO films without in-situ substrate heating and post-deposition annealing," Journal of Materials Science & Technology, vol. 16, pp. 281-285, May 2000.
[21] M. K. Jayaraj, et al., "Transparent conducting zinc oxide thin film prepared by off-axis rf magnetron sputtering," Bulletin of Materials Science, vol. 25, pp. 227-230, Jun 2002.
[22] T. Minami, et al., "Substrate-Temperature Dependence of Transparent Conducting Al-Doped Zno Thin-Films Prepared by Magnetron Sputtering," Japanese Journal of Applied Physics Part 2-Letters, vol. 31, pp. L257-L260, Mar 1 1992.
[23] K. H. Yoon, et al., "Characteristics of ZnO thin films deposited onto Al/Si substrates by rf magnetron sputtering," Thin Solid Films, vol. 302, pp. 116-121, Jun 20 1997.
[24] H. Yan, et al., "Characterizations of SnO2 thin films deposited on Si substrates," Thin Solid Films, vol. 326, pp. 88-91, Aug 4 1998.