摘要

本研究使用商用in-line PECVD 低溫(<300℃)沉積SiN:H 抗反射層，並且以網版印刷的方式製作商業N型太陽電池以達到高效率、低成本、高產量。
主要討論在不同製程之下所得到的結果.我們分析不同的蝕刻時間對SiNx的影響,利用AFM分析其表面粗糙度；FTIR分析元素鍵結以及穿透反射儀來分析光學特性。
最後我們用太陽能模擬器來得到我們的效率,並且分析在不同的製程參數之下所得到的結果

Abstract

In this thesis, we use commercial in-line PECVD to deposit SiNx:H antireflection coating layer in low temperature (<300℃) and finish the commercial n-type solar cells by screen printing to achieve high efficiency、low cost and high throughput.
The main discussion is the results of different process. Analyzing SiNx layer after different etching time. We use AFM to measure the roughness of surface, FTIR spectrum to analyze the bonding of elements and spectrometer to analyze optical characteristics.
　　Finally we use solar simulator to obtain efficiency and analyze results of different process.

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