近年來，隨著網際網路頻寬日益增加的需求下，電信科技以迅速的腳步發展高速光纖通訊系統。而半導體雷射發1.3與1.55微米的訊號源，有著零色散與最低耗損的優點，為長距離傳輸最適合的波段，促使它成為光纖通訊最重要的元件。傳統的磷化銦系列雷射元件可達到上述發光波段的需求，由於其價格昂貴且溫度特性不佳，同時也不適用於面射型雷射的製作，使它的發展有待商榷。
本論文中，我們嘗試以有機金屬化學氣相沉積法成長長波長砷化鎵系列的量子井雷射以取代傳統的磷化銦系列雷射。在調整最佳化長晶參數後，我們在砷化鎵基板上成長了高應力的銻砷化鎵／砷化鎵量子井雷射；接著我們進一步運用應力補償的結構於高應力的銻砷化鎵量子井以改善磊晶品質，在經過邊射型雷射的製程並加以量測後，220每平方公分分之安培之非常低起振電流密度1235奈米波段的雷射元件為我們所實現。另外，我們亦研製了加入應力補償概念之磷砷化鎵／砷化鎵多重量子位障，在元件加入了此結構後，室溫下的起振電流密度為65每平方公分分之安培，特性溫度102凱氏溫度，較未使用此結構的雷射元件其光電與溫度特性都有所提升。
在未來，我們可以嘗試成長銻砷化鎵／砷化銦鎵雙層量子井雷射，我們認為這樣的雷射元件有更好的優勢發光波長超越1.3微米,甚至到達1.55微米。另外，利用有機金屬化學氣相沉積法成長銻砷化鎵量子井面射型共振腔雷射，亦是未來的挑戰之一。

In recent years, the development in the telecommunication business has increased and these applications include long-distance, short distance, and high-speed optical fiber communications systems, has increased the for significantly higher internet bandwidth used in these applications day by day. Semiconductor laser diode emitting at the wavelength of 1.3-1.55μm is one of the most important optoelectronic devices in optical-fiber communication due to their advantages of zero dispersion and lowest loss respectively. They are the most suitable transmission wavelength regions of long haul fiber communication. The long wavelength can be achieved by growing conventional InP-based lasers. Not only it is very expensive and the temperature characteristics are not good enough, but also not suitable to make VCSELs.
In this thesis, we try to grow GaAs-based QW lasers by MOVPE to replace InP-based long wavelength lasers. After optimization of the growth condition, highly strain GaAsSb/GaAs QWs can be grown on GaAs substrates by MOVPE successfully; we design various laser structures with strain compensation layer to improve the crystal quality of highly strained GaAsSb QW. Lasing wavelength of 1235nm with very low threshold current density of 220A/cm2 edge emitting lasers were demonstrated successfully. In addition, we also study GaAsP/GaAs MQB with strain-compensated effects. Device with this structure get the better opto-electronic and thermal characteristic, room temperature threshold current density is 65A/cm2 and the characteristic temperature is 102K.
In the future, we will try to grow GaAsSb/InGaAs bi-layer QW lasers. We believe the bi-layer QW laser has an advantage in lasing peak wavelength above 1.3-μm, even achieving 1.55-μm. Besides, GaAsSb QW VCSELs all grow by MOVPE is another challenge.

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