高熵氧化物（HEOs）因其優異的熱穩定性、高熵效應及遲滯擴散效應而受到廣泛關注，這些特性使得高熵氧化物在作為電介質層以實現新型電晶體方面具有極大潛力。在本研究中，我們探討高熵氧化物在金屬-氧化物-半導體場效電晶體（MOSFETs）與薄膜電晶體(TFTs)中的應用。我們首先透過組合式濺鍍法合成了 Ba(Hf,Ta,Mo,Zr,Ti)O₃ 薄膜。使用掃描式X光繞射 (XRD) 與掃描式X光螢光 (XRF) 技術，對樣品的結晶性與元素組成進行有效分析。總共製作了100個以Ba(Hf,Ta,Mo,Zr,Ti)O3介電薄膜為基礎的MOS元件，以推導出薄膜庫的介電性。性能優異的Ba(Hf,Ta,Mo,Zr,Ti)O3介電薄膜表現出高介電常數(k)，範圍為325至374，並具有低介電損耗(0.01至0.08)，等效氧化層厚度 (EOT) 約為0.8至0.94奈米(在1 kHz下測得)。此外，將Ba(Hf,Ta,Mo,Zr,Ti)O3薄膜進行900 oC的快速熱退火 (RTA) 處理，以研究其熱穩定性。經RTA處理後的樣品展現出良好的熱穩定性與相對低的漏電流密度，在1V電壓下約為2.8 ×10^-9 A/cm^2。RTA處理後的MOSFET表現出優異的電性，包括次臨界擺幅(SS)為0.062 V/dec、閾值電壓(VT)為0.03 V、飽和場效遷移率為138.4 cm^2/V·s，以及開關電流比為8×10^6。這些結果顯示出 Ba(Hf,Ta,Mo,Zr,Ti)O₃ 在次世代電子元件中具有極大的應用潛力。其次，將氮摻雜至 Ba(Hf,Ta,Mo,Zr,Ti)O₃ 薄膜中，以進一步提升元件的電介質與電性表現。氮摻雜之 Ba(Hf,Ta,Mo,Zr,Ti)O₃ 電介質係透過組合式濺鍍法，製備於氧化銦錫(ITO)基板上。製作了基於氮摻雜Ba(Hf,Ta,Mo,Zr,Ti)O3介電薄膜的 MIM 裝置，以推導薄膜的介電性能。該N-Ba(Hf,Ta,Mo,Zr,Ti)O3 薄膜庫在 1 kHz 時表現出 262至322 範圍內的高 k 值和 0.01至0.3 的低介電損耗。所製得的TFT元件展現出優異的電性表現，包括次臨界擺幅為0.062 V/dec、閾值電壓 (VT) 為0.02 V、飽和場效遷移率為60 cm^2/V·s，以及開關電流比達到108。該TFT元件在各種閘極偏壓應力條件下皆展現出穩定性，並於放置五個月後仍維持良好的長期穩定性。此外，以此TFT為基礎的紫外光 (UV) 偵測器也展現出優異的感測表現，包含約2 × 10^6的靈敏度與約1171.9 A/W的響應度。

High entropy oxides (HEOs) have attracted considerable interest because of their excellent thermal stability, high entropy and sluggish diffusion effects, which make HEOs highly promising for dielectric layer to realize novel transistors. In this study, we explore the high entropy oxides for applications in metal-oxide-semiconductor field-effect transistors (MOSFETs) and thin-film transistors (TFTs). We first synthesize the Ba(Hf,Ta,Mo,Zr,Ti)O3 thin films through combinatorial sputtering. Scanning X-ray micro diffractometry (XRD) and scanning X-ray fluorescence (XRF) were used to efficiently analyze the crystallinity and elemental composition in the samples. A total of 100 Ba(Hf,Ta,Mo,Zr,Ti)O3 dielectric films-based MOS devices were fabricated to deduce the dielectric properties of the film library. The favorable Ba(Hf,Ta,Mo,Zr,Ti)O3 dielectric films exhibited high dielectric constant (k) in the range of 325-374 and low dielectric loss of 0.01-0.08 values with an equivalent oxide thickness (EOT) of approximately 0.8-0.94 nm at 1 kHz. The Ba(Hf,Ta,Mo,Zr,Ti)O3 film was subjected to the RTA at 900 oC to investigate the thermal stability. The sample after RTA exhibited favorable thermal stability and reasonably low leakage current density of approximately 2.8 ×10^-9 A/cm^2 at 1V. The excellent electrical performance, including a subthreshold swing of 0.062 V·dec^-1, a threshold voltage (VT) of 0.03 V, a saturated field-effect mobility of 138.4 cm^2·V^-1·s^-1, and an on/off current ratio of 8×10^6 was achieved for the resulting MOSFET after RTA. These results indicate the great potential of Ba(Hf,Ta,Mo,Zr,Ti)O3 in next-generation electronic devices. Secondly, Nitrogen was doped into the Ba(Hf,Ta,Mo,Zr,Ti)O3 thin films to further enhance the dielectric and electrical performances of the devices. The N-doped Ba(Hf,Ta,Mo,Zr,Ti)O3 dielectric was fabricated on indium tin oxide (ITO) substrate through combinatorial sputtering. The N-doped Ba(Hf,Ta,Mo,Zr,Ti)O3 dielectric thin films based MIM devices were fabricated to deduce the dielectric properties of the film libraries. The N-Ba(Hf,Ta,Mo,Zr,Ti)O3 film library exhibited high-k values in the range of 262-322 and low dielectric loss of 0.01-0.3 at 1 kHz. The excellent electrical performance, including a subthreshold swing of 0.062 V·dec^-1, a threshold voltage (VT) of 0.02 V, a saturated field-effect mobility of 60 cm^2·V^-1·s^-1, and an on/off current ratio of 10^8 was achieved for the resulting TFT. The resulting ZnSnO channel-based TFTs also exhibited a great stable performance under various gate bias stress conditions and remarkable long-term stability after being maintained for five months. Furthermore, the excellent Ultraviolet (UV)-sensing performance, including the sensitivity of approximately 2 × 10^6 and responsivity of approximately 1171.9 A/W, was obtained for the TFT-based UV detector.

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