近年來，由於製程技術日新月異，使得微波及毫米波之單晶積體電路之高頻特性有顯著的提升，透過III-V化合物半導體製程所製作之主、被動元件，具有優異的電性，其中Schottky二極體相當適用於被動混頻器之設計，因此採用0.15-μm pHEMT製程技術來實現各式新穎被動混頻器。此外，在現今微波及毫米波領域裡，單一晶片系統 (SOC) 整合天線、射頻區塊與基頻區塊的類比、數位電路已蔚為風潮，其中矽製程技術具有極佳的積體整合度，然而受限於主動元件之低崩潰電壓，導致矽製程不利於高功率放大器之製作，因此目前主流依舊採用單一封裝系統 (SIP) 為主，本論文中以提升積體整合度為目標，使用0.18-μm CMOS製程設計微小化之新式被動混頻器有其研究價值。另一方面，印刷電路板 (PCB) 技術已廣泛的使用在收發系統的整合，且成本相對低廉，基於此，新式射頻被動電路的設計能提供一較佳的選擇於各式射頻電路與系統之應用。
在Ku、K與Ka頻帶混頻器之設計上，本論文致力於寬頻與微小化之研發標的，提出新穎的設計概念針對操作頻寬、中頻頻寬、埠際隔離度、簡化佈局與被動電路微小化進行改良。在雙平衡星型混頻器的設計上，本論文提出兩種改良架構，藉此簡化電路架構進而縮小晶片面積，相較於傳統的設計，中頻端的精簡佈局可提升中頻頻寬至15 GHz以上，在雙平衡環型混頻器的研發上，為求電路佈局的簡潔，提出一新穎的設計概念，將原本高頻段的射頻巴倫電路改由C頻段的微小化中頻巴倫代替，而本振埠與射頻埠分別為新式180°混成器之差埠與和埠，其中本振訊號會以0°與180°輸入至環型二極體，在升頻操作時，射頻端可將輸出的訊號同相取出，如此將不需要額外的訊號輸出電路，並可獲得30GHz的操作頻寬與20dB以上的埠際隔離度。本論文亦提出一新穎的環型混頻器架構，將射頻螺旋巴倫的接地端改由一低通濾波器取代，對射頻訊號提供一接地功能，對中頻訊號提供一傳輸路徑，因此中頻訊號將可順利取出，且大幅減小電路之面積，同時亦具有良好的埠際隔離度。
隨著操作頻率的提升，高Q值之被動元件不易獲得，導致高功率輸出與低相位雜訊之壓控振盪器設計難度增加，此時次諧波混頻器提供一個極佳解決方案，傳統的次諧波混頻器由於電路架構上使用λLO/4的開路與短路微帶線，不利寬頻操作，本論文使用一TFMS為基礎的兩級Wilkinson功率結合器達成晶片縮小化的目的，並且可獲得10-40GHz的超寬頻特性。四次諧波混頻器僅使用四分之一的本振頻率即可達成混頻效果，基於此優點，本論文採用一集總式雙工濾波器，將這射頻與本振訊號結合輸入至並聯反接二極體對，如此一來不僅提高RF/LO隔離度，且可有效的拓展操作頻寬，並達成微小化的目的。經由新架構的研發，本論文所設計的混頻器業已達成寬頻操作、埠技隔離度之提升、中頻頻寬之擴展與晶片微小化之要求。
最後，本論文運用電磁能隙架構 (EBG) 的慢波效應以及低通特性來設計一小型化可抑制n次諧波的功率分波器，由實作的成果得知EBG的應用可減少30%的四分之波長微帶線長度，另外EBG亦可改良DGS架構在接地面多一道製程的缺點，本論文亦使用EBG與指叉式電容來實現一微小化巴倫電路，平面式且小型化的設計有助於射頻電路的製作與整合，並降低其設計與製作時之難度。

Due to the rapid advances of semiconductor technologies, the performance of monolithic microwave/millimeter-wave integrated circuits (MMICs) has been progressed significantly. The active and passive devices fabricated in III-V compound semiconductor technologies exhibit superior radio frequency (RF) characteristics. Particularly, the Schottky barrier diode is rather appropriate for the passive mixer designs. Thus a 0.15-μm pHEMT technology is used to realize various novel passive mixers. The current trend of microwave/millimeter-wave regime is towards system on chip (SOC). The SOC means that all the circuits, including RF front-end, analog, and digital circuits are integrated on the same chip. The silicon-based technologies have the highest level integration. Owing to the lower breakdown voltage of silicon-based devices, however, these technologies have poor output power capability to limit the development of the high power amplifier. Subsequently, the main trend still prefers system in package (SIP). In order to achieve high-level integration, it is very interesting in the investigation of miniature passive mixer by using a 0.18-μm CMOS technology. Moreover, the printed circuit broad (PCB) technologies are used extensively to integrate the transceiver systems, and further reduce cost. Based on these reasons, it is cost-effective if the novel passive circuits are fabricated in PCB technologies with a compact structure. These passive circuits can also be applied to various RF components and systems.
In this dissertation, the design purpose of passive mixers will focus on the extension of operating bandwidth and circuit miniaturization for Ku-, K-, and Ka-band applications. We proposed several novel design concepts to improve operating bandwidth, IF bandwidth, port-to-port isolation, and compact layout. Based on the conventional doubly-balanced star mixer (star DBM), both novel configurations were utilized to simplify circuit structure and further reduce chip area. Consequently, the compact layout of IF extraction can be achieved to improve IF bandwidth up to 15 GHz. Additionally, based on the conventional ring DBM, a novel design concept is proposed to obtain the compact circuit layout. The RF balun used in the conventional ring DBM is instead of a C-band miniature IF balun. The LO signal and RF signal were excited into the difference port and sum port of a new 180° hybrid, respectively, Hence, the LO signal can be divided into two parts with equal amplitude and anti-phase, and then fed into ring quad diodes. Furthermore, the in-phase RF signal can be extracted from sum port of the 180° hybrid for up-converter mode without any additional extraction circuit. As the results, a 30 GHz operating bandwidth, and more than 20 dB port-to-port isolations can be attained. Another novel architecture of ring DBM also shows in this dissertation. The common ground of the RF spiral balun is replaced by a low-pass filter used to shorten RF signal and from an IF transmission path. This method is suitable to extract IF signal conveniently, reduce chip size more efficiently, and maintain superior port-to-port isolations as well.
While the operating frequency increases, the Q-factor of passive elements will be degraded that is consequent on the degradation of output power and increase of phase noise of VCO. The subharmonic mixers (SHMs) provide an attractive choice to solve this problem. However, the conventional SHMs employ both λLO/4 open and short stubs to enhance isolations. Without doubt, the operating bandwidth is decreased distinctly. Accordingly, a two-stage Wilkinson power combiner using thin-film microstrip structure (TFMS) is utilized to design SHM and extend operating bandwidth ranging form 10 to 40 GHz. Furthermore, a quadruple SHM can be performed by a one- quarter of the LO frequency of a fundamental mixer. We propose a lumped frequency diplexer to combine high frequency RF and low frequency LO signals with superior LO-to-RF isolation. Moreover, the lumped structure is efficient to reduce chip size. Through the development of the novel architectures, the proposed mixers have accomplished broadband operation, superior port-to-port isolations, wider IF bandwidth, and chip miniaturization.
Finally, based on the slow-wave effect and stop-band property of electromagnetic c bandgap (EBG), this dissertation presents a planar power divider with an effective technique for nth harmonics suppression. The proposed technique served by a microstrip EBG cell is used to suppress the nth harmonics and reduce the length of a quarter-wave line over 30% as compared to the conventional divider. In addition, a planar compact balun composed of an EBG cell and an interdigital capacitor is proposed. The planar and miniature design is beneficial to integrate RF circuits and degrade the practical difficulty.

Chapter 1 Introduction

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Chapter 2

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Chapter 3

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Chapter 4

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