本論文主要研究週期性介質結構於N型氮化鎵層發光二極體光電特性的影響。實驗中將週期性介質置於氮化鎵層上，其後配合磊晶側向成長(Epitaxial Lateral Overgrowth；ELOG)，使其週期性介質包覆於氮化鎵層中，此外並降低缺陷密度，再者利用介質結構與氮化鎵的折射率差，增加光在內部散射的機會，提升元件的出光效率。
　　在發光二極體光電特性方面，首先比較不同二氧化矽柱(SiO2 pillar)結合空隙(Air gap)的結構，在電流20mA注入下，其順向導通電壓比傳統結構的LED增加0.04～0.07V，其光輸出功率約為4.23～4.66mW，增加約39.14%～53.29%。然而不同空氣洞(Air void)發光二極體，在電流20mA注入下，順向導通電壓比傳統結構的LED增加0.03～0.07V，光輸出功率約為3.36～4.16mW，增加約10.53%～36.84%。在本實驗中，SiO2 pillar高5000Å and air gap高5000Å，在電流20mA注入下，其光輸出功率的增加量將大於50%。

In this thesis, we discussed optoelectronic characteristics of InGaN-based light emitting diodes with embedded periodic dielectric array structures in n-type GaN. The GaN layer was overgrown on the periodic dielectric array structures. The epitaxial lateral overgrowth mode on periodic dielectric array structures could effectively reduced the dislocations. Meanwhile, the refractive index difference between dielectric array structure and GaN could enhance guided-light scattering efficiency.
In the optoelectronic characteristics of light emitting diodes, first we compared the difference of SiO2 pillars and air gaps structure. At 20 mA current injections, the output powers were 3.04, 4.23, 4.66, and 4.44 mW for conventional LED, LEDs with embedded 2000 and 5000 Å-height of SiO2 pillars and air gaps, 5000 and 5000 Å-height of SiO2 pillars and air gaps, 7000 and 4000 Å-height of SiO2 pillars and air gaps, respectively. However, the difference of air voids structure, at 20 mA current injections, output powers were 3.04, 3.36, 4.16, and 3.83 mW for conventional LED, LEDs with embedded 3000Å-height and 1μm-wide of air pillars and air gaps, 6000Å-height and 2μm-wide of air pillars and air gaps, 8000Å-height and 1μm-wide of air pillars and air gaps, respectively. We found that the embedded 5000 and 5000 Å-height of SiO2 pillars and air gaps array structure could enhance LED output power by more than 50% due to the enhanced guided-light scattering efficiency in our study.

第一章
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