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研究生: 林姸佑
Lin, Yen-Yu
論文名稱: 基於 MIM 結構之多波段兆赫茲超材料吸收器設計與實驗分析
Design and Experimental Analysis of Multiband Terahertz Metamaterial Absorbers Based on MIM Structures
指導教授: 莊文魁
Chuang, Ricky W.
學位類別: 碩士
Master
系所名稱: 智慧半導體及永續製造學院 - 半導體製程學位學程
Program on Semiconductor Manufacturing Technology
論文出版年: 2025
畢業學年度: 113
語文別: 中文
論文頁數: 144
中文關鍵詞: 超材料兆赫茲波段MIM 結構多頻吸收器感測應用共振機制CST 模擬THz-TDS
外文關鍵詞: Metamaterials, Sensing applications, Terahertz band, MIM structure, Multiband absorber, Resonance mechanism, CST simulation, THz-TDS
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  • 本研究設計與分析一系列具有多波段吸收特性的兆赫茲超材料吸收器,結構採用金屬–介電–金屬(Metal–Insulator–Metal, MIM)形式,並以高阻值矽為介電基板,銀為上下金屬層材料。藉由調整上層金屬的幾何圖形,設計出五種具代表性的單元結構(Meta1 至 Meta5),並利用 CST Microwave Studio 進行模擬,探討其電磁吸收性能及共振機制,並搭配 THz-TDS 系統進行反射模組實驗驗證。
    模擬與實驗結果顯示,所設計結構皆展現明顯的多頻吸收特性,吸收率最高可達 0.95,其中 Meta3 結構展現出最低平均誤差與最佳重現性。進一步分析場分布與表面電流特徵,揭示吸收峰主要來自偶極共振、LC 共振與高階模態耦合等多種共振機制,並觀察不同模態間之場能量集中現象。另從半峰全寬與 Q 值分析可知,Meta2 的共振峰最為尖銳、頻率選擇性最佳,Meta3 則擁有最多吸收峰但頻寬較寬,而 Meta5 在模擬與實驗間呈現良好一致性,顯示具備吸收穩定與設計潛力。此外,亦以傳輸矩陣法模擬理想平面 MIM 結構,驗證 Fabry–Pérot 型干涉效應在無圖形結構下之吸收能力,強調圖形設計對多頻共振實現之關鍵性。
    本研究亦探討材料參數變異對吸收效能之影響,發現高阻值矽基板具較佳吸收表現,適合作為中間層材料。並提出未來可透過氣體置換與除濕手段改善量測準確性。對於結構設計方面,建議可導入更薄之介電層材料以降低干涉效應,同時探索分形幾何與主動材料的應用,以實現多頻或可調式吸收器之功能性提升,或結合兆赫茲超材料波導耦合元件。整體研究成果驗證了 MIM 結構在兆赫茲波段的吸收能力,為後續感測器與濾波元件設計提供可行方向與理論依據。

    This study presents the design and analysis of a series of multiband terahertz metamaterial absorbers based on the metal–insulator–metal (MIM) structure. The proposed absorbers utilize high-resistivity silicon as the dielectric substrate and silver as the top and bottom metallic layers. Five representative unit-cell designs (Meta1 to Meta5) were developed by tailoring the geometry of the top metal patterns. Electromagnetic absorption characteristics and resonance mechanisms were investigated through CST Microwave Studio simulations, and experimental validation was performed using a terahertz time-domain spectroscopy (THz-TDS) system in reflection mode.
    Simulation and experimental results demonstrate that all proposed structures exhibit distinct multiband absorption characteristics, with peak absorptance values of up to 0.95. Among them, Meta3 shows the lowest average error and best reproducibility. Field and surface current distribution analyses reveal that the observed absorption peaks originate from various resonance mechanisms, including dipole resonance, LC resonance, high-order mode coupling, and localized field concentration across different modes. Additionally, analysis of the full width at half maximum (FWHM) and quality factor (Q) shows that Meta2 exhibits the sharpest and most frequency-selective resonance peaks; Meta3 supports the most significant number of absorption modes but with broader bandwidths; and Meta5 demonstrates strong consistency between simulation and experiment, indicating good absorption stability and design potential. A complementary simulation using the transfer matrix method for an ideal planar MIM structure further confirms that Fabry–Pérot-type interference contributes to the absorption behavior in non-patterned configurations, highlighting the critical role of pattern geometry in achieving multiband resonance.
    This study also examines the influence of material parameter variation on absorption performance and confirms that high-resistivity silicon provides superior absorption, making it a suitable dielectric layer. Gas purging and dehumidification methods are suggested to improve measurement accuracy. For future design enhancements, thinner dielectric layers are recommended to suppress interference effects. The exploration of fractal geometries and active materials is also proposed to realize tunable or multifunctional absorbers, potentially combined with terahertz metamaterial waveguide-coupled components. The overall results verify the effectiveness of the MIM structure in the terahertz regime and provide theoretical and practical guidance for future sensor and filter device development.

    中文摘要II SUMMARYIV 誌謝XXII 目錄XXIV 表目錄XXVII 圖目錄XXVIII 第一章 緒論1 1.1 兆赫茲波段1 1.2 超材料3 1.3 研究動機9 1.4 論文架構簡介11 1.5 第一章參考文獻12 第二章 超料吸收器理論及模型14 2.1 電磁理論基礎14 2.1.1 馬克斯威方程組14 2.1.2 電磁波動方程式15 2.2 相對介電常數及相對磁導率17 2.2.1 德魯德模型17 2.2.2 勞倫茲模型18 2.3 吸收機制分析20 2.3.1 干涉理論20 2.3.2 共振機制21 2.3.3 阻抗匹配理論24 2.4 集膚深度26 2.5 超材料吸收器文獻回顧與設計比較28 2.5.1 可調式結構29 2.5.2 寬頻結構32 2.5.3 極薄型吸收器34 2.5.4 超材料吸收器文獻比較36 2.6 第二章參考文獻37 第三章 吸收特性分析與建模結果39 3.1 建模與參數設置39 3.1.1 建立模型39 3.2 中間層說明43 3.3 數值結果分析44 3.4 各結構設計之吸收效分析49 第四章 元件製作與量測52 4.1 吸收器結構設計52 4.2 元件製程流程53 4.2.1 元件製程流程圖53 4.2.2 基板切割、清潔53 4.2.3 黃光微影製作54 4.2.4 金屬沉積55 4.2.5 舉離製程(Lift-Off)56 4.3 製程問題與優化57 4.3.1 單層光阻製程之限制57 4.3.2 雙層光阻(Bi-layer)製程導入58 4.3.3 負光阻製程導入與舉離改善60 4.4 元件製作結果對比光罩62 4.5 實驗量測環境介紹64 4.5.1 實際量測流程65 4.6 第四章參考文獻66 第五章 結果與討論67 5.1 材料參數與理想結構模擬67 5.1.1 高阻值矽與金屬層之介電常數67 5.1.2 理想平面 MIM 結構之吸收特性68 5.2 中間層材料比較實驗72 5.2.1 吸收頻譜比較(高阻矽 vs N型矽)72 5.2.2 結論73 5.3 MIM 結構數值分析與實驗結果對比74 5.3.1 Meta1–Meta5結果比較75 5.3.2 結論84 5.4 平均吸收率誤差分析87 5.5 MIM 結構電、磁場強度及表面電流結果88 5.5.1 結論103 5.6 吸收率與場強度之間的對應性探討105 5.6.1 吸收率 = 場強度(Absorption = Field Magnitude)105 5.6.2 吸收率 ≠ 場強度(Absorption ≠ Field Magnitude)106 5.6.3 結論107 第六章 結論與未來工作109 6.1 研究總結109 6.2 未來研究111 6.3 第六章參考文獻113

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