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研究生： 林凱祥
Lin, Kai-Hsiang
論文名稱： 紫外偏振光耳語廊模態共振n型氧化鋅與p型氮化鎵發光二極體
Ultraviolet polarization emission from individual horizontal n-ZnO MR/p-GaN LED with whispering-gallery-mode oscillation
指導教授： 徐旭政
Hsu, Hsu-Cheng
學位類別： 碩士
Master
系所名稱： 理學院 - 光電科學與工程學系
Department of Photonics
論文出版年： 2015
畢業學年度： 103
語文別： 英文
論文頁數： 78
中文關鍵詞： 氧化鋅微米柱 、偏振 、耳語廊模態 、發光二極體
外文關鍵詞： ZnO microrod, polarization emission, whispering-gallery-mode, light-emitting-diode
相關次數： 點閱：174  下載：0 
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    • 氧化鋅因為其具有寬能隙(3.37eV)與大激子束縛能(60meV)，以及其與氮化鎵晶體的晶格匹配性，使得氧化鋅成為一個具有潛力的LED與LD半導體材料。氧化鋅微米柱具有良好的六角柱結構，透過光在內部全反射共振的形式可以產生耳語廊模態共振雷射，擁有低雷射閥值的特性。
    我們製作了水平放置氧化鋅微米柱與氮化鎵複合異質接面二極體並觀察其特性。在電極的製作上使用了鎳金與氧化銦錫透明導電玻璃作為與氧化鋅和p型氮化鎵形成歐姆接觸的電極。元件在低電流時即可觀察到耳語廊模態的共振產生，並且具有紫外偏振發光的特性，增加了其在半導體雷射表現上的可能。

    Zinc oxide has wide direct band gap (3.37eV) and large exciton binding energy (60 meV) and also a similar crystallography with GaN which makes it a promising material for light emitting diode (LED) and laser diode (LD). ZnO microrod has well hexagonal shape which can confine light inside by totally reflectivity and perform whispery-gallery-mode (WGM) lasing. WGM cavity provides a low loss that makes it has lower Q factor than traditional lasers.
    Here, a horizontal n-ZnO microrod/ p-GaN thin film LED were produced in a simple fabrication process. The WGM emission and optical anisotropic properties of individual microrod-based LEDs were studied. The electroluminescence spectra of LED show a dominate peak at 380 nm with partially polarization behavior and WGM oscillation at low injection current, which has shown great potential for ZnO microrod base laser diode.

    摘要 I Abstract II 致謝 III Contents IV List of Tables VII List of Figures VIII 1 Introduction 1 1-1 Preface 1 1-2Motivation 7 2 Background Theories 9 2-1 Characteristics of Zinc Oxide 9 2-2 The Spontaneous Emission of Zinc Oxide 11 2-2-1 Ultraviolet Emission 11 2-2-2 Green Emission 13 2-3 Whispering-Gallery-Mode of Zinc Oxide 14 2-4 Polarization Emission of the Near-Band-Edge emission 19 2-5 p-n Heterojunction 22 2-5-1 Structure of a p-n junction 22 2-5-2 Properties of a p-n junction 23 2-5-2-1 Equilibrium (zero bias) 23 2-5-2-2 Forward bias 23 2-5-2-3 Reverse bias 24 2-6 The parasitic resistance estimation 25 2-7 The contact between metal and semiconductors 27 2-7-1 Schottky barrier 27 2-7-2 Ohmic contact 31 2-7-3 The metal choose for n-ZnO and p-GaN for ohmic contact 35 3 Experiment Process 36 3-1 Experimental Procedure 36 3-2 Chemical and Consumable 37 3-3 The Growth System of ZnO Microrods 38 3-3-1 Chemical Vapor Transport System 38 3-3-2 Substrate cleaning 40 3-3-3 The Growth of ZnO Microrods 41 3-3-4 The Transfer of ZnO Microrod 42 3-4 Devices Fabrication 43 4 Measurement Instrument 45 4-1 Raman Spectroscope 45 4-2 Field-Emission Scanning Electron Microscopy 48 4-3 Photoluminescence 48 4-4 Electroluminescence 50 4-5 Semiconductor Characterization System 52 5 Experiment Results and Discussions 53 5-1 SEM & Raman Analysis 53 5-2 Continuous-wave PL Analysis 54 5-3 Electrical and Optical Characterization Analysis 56 5-3-1 IV Characteristic 56 5-3-1-1 I-V Characteristic of the electrode 56 5-3-1-2 I-V Characteristic of the device 58 5-3-2 Electroluminescence 59 5-3-3 Whispering-Gallery-Mode Analysis 60 5-3-4 Polarization Emission Analysis 64 5-3-5 Light-Output Power & Wall-Plug Efficiency Analysis 68 6 Conclusion 70 7 Prospective Aspects 71 8 Reference 72

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