本篇論文研究中，我們在半導體材料銻化銦(InSb)之中外加磁場，先將結構設置為SIS(Semiconductor-Insulator-Semiconductor)結構，由於InSb內部電子產生迴旋運動(Cyclotron Motion)，使其介電係數變更為張量(Tensor)形式，操縱SIS內部中的電漿共振波變化。
利用SIS內部的表面電漿隨著結構尺寸的變化，將六段不同長度的SIS結構結合起來，可以讓每一段SIS結構的共振波相位產生差異，再加上外加磁場的作用，達到入射光入射後產生偏折的效果，利用此偏折效果，設計出多層半導體的磁控式透鏡，藉由結構的排列，設計出發散透鏡與匯聚透鏡，利用磁場調控輻射角度，可應用於〖TH〗_z波段的光束。
我們也將透鏡區分上下部分，分別對其外加不同強度的磁場，完成一個發散元件可以有兩種不同方位的偵測，匯聚透鏡可以轉變輸出波位置。
本研究使用有限元素分析軟體 COMSOL Multiphysics來對物理問題進行設計與模擬分析。

We apply a magnetic field to the semiconductor material InSb and set the structure as a SIS (Semiconductor-Insulator-Semiconductor) structure first. Due to the cyclotron motion of the electrons inside InSb, the permittivity is changed to the form of a tensor, and the plasmonic resonance wave change in the interior of the SIS is manipulated. Using the surface plasmon inside the SIS to change with the size of the structure, combining six SIS structures with different lengths can make the resonant wave phase of each SIS structure different, plus the effect of an external magnetic field to achieve the deflection of incident light. Using this deflection effect, a multilayer semiconductor magnetic lens is designed.

Through the arrangement of the structure, we designed the divergent lens and the converging lens, and the output wave angle is controlled by the magnetic field, which can be applied to the beam in the THz band. We also distinguish the upper and lower parts of the lens, and apply magnetic fields of different intensities to them respectively, so that a divergent lens can be detected in two different directions, and the converging lens can change the position of the output wave.

This study uses the finite element analysis software COMSOL Multiphysics to design and simulate physical problems.

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