本研究以燃料輔助法製備氧化鎳薄膜，並探討其應用在電致變色元件與電阻式隨機存取記憶體兩個部分。第一部分以硫脲輔助製備氧化鎳薄膜，藉由改變燃料硫脲的添加量及後續熱處理的溫度，探討氧化鎳的電致變色性質。研究結果顯示，隨著燃料硫脲的添加比例上升，所製備的氧化鎳薄膜展現出良好的電致變色性質，包括高穿透率變化、高著褪色效率、快速的著褪色反應時間及良好的可靠度。由材料分析得知，硫脲添加比例越高薄膜之晶粒粒徑越小，產生較多的晶粒表面，造成反應面積增加，降低氧化鎳薄膜中的電荷轉換阻力。更進一步降低薄膜熱處理的溫度，使電致變色元件有更高的穿透度變化。第二部分以甘胺酸輔助製備氧化鎳薄膜於導電基板，利用不同厚度之鋁上電極組成電阻式隨機存取記憶體元件，因鋁上電極好氧化之特性，奪取氧化鎳之氧原子使薄膜中產生氧空缺，造成薄膜內組成發生變化。並隨著厚度增加，薄膜內氧空缺濃度提高，使元件有較佳的電阻式隨機存取記憶體性質，包括較低的電阻轉換臨界電壓、較大的電阻比值、較佳的穩定性、較高的元件成功率及較長的記憶保持時間。

Nickel oxide films have been formed on transparent conductive substrates by fuel-assisted routes for use in electrochromic devices and resistance random access memories (RRAM). For application to electrochromic devices, the nickel oxide films are fabricated using thiourea-assisted method. The effects of the amount of thiourea addition and the post-treatment temperature on the microstructures and electrochromic properties of the films are investigated. With increasing the amount of thiourea addition, the grain sizes of the nanoparticles within the films decrease. Superior electrochromic properties of the nickel oxide films, including larger optical modulation, higher coloration and bleaching efficiency, faster response time and better durability are therefore obtained due to the increase of surface area for charge transfer. In addition, lowering of the post-treatment temperature decreases the grain size further, resulting in the improvement of the electrochromic properties of the nickel oxide films. For application to ReRAM, the glycine-assisted nickel oxide films are fabrication on ITO substrates with Al top electrodes. The effect of Al-electrode thickness on the performances of nickel oxide ReRAM is investigated in this study. The device with thicker Al electrode demonstrates superior resistive switching properties, including smaller working voltage, larger ON/OFF ratio, better reliability, higher device yield, and better retention. It is attributed to higher oxygen vacancies formed in the nickel oxide films via the reduction of NiO by Al.

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