自從以蕭特基接觸為基礎的氫氣感測機制被提出之後，一些相關的半導體式氫氣感測器已被廣泛地製作與研究。而鑒於鈀金屬對於氫氣的優越觸媒特性以及高電子移動率場效電晶體極佳放大器功能和穩定成熟的半導體製程技術，因此在本論文中，我們首先研製了以鈀金屬作為觸媒金屬的砷化鋁鎵/砷化銦鎵/砷化鎵擬晶性高電子移動率場效電晶體式氫氣感測器，並且在砷化鋁鎵表面成長一層極薄(50Å)之砷化鎵，來抑制砷化鋁鎵因接觸空氣產生原生氧化層而導致費米能階釘住效應，接著為了提升電子的移動速率、電流密度等傳輸特性，所以我們也研製了一個具有高銦含量之砷化銦鎵傳導層的砷化銦鋁/砷化銦鎵/砷化鎵變晶性高電子移動率場效電晶體式氫氣感測器並且以相同的鈀金屬作為觸媒金屬，繼而在不同溫度與濃度條件下來作一連串穩態和暫態響應的電性分析與動力學探討。並期許在未來多功能氣體感測器半導體晶片的實現化。

Since the hydrogen-sensing mechanism based on Schottky contact has been proposed, the related semiconductor-type hydrogen sensors are extensively fabricated and demonstrated. In this thesis, due to the good catalytic activity of palladium and the advantages of high electron mobility transistor (HEMT), hydrogen sensors based on AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor (PHEMT) with an undoped GaAs cap layer, and InAlAs/InGaAs/GaAs metamorphic high electron mobility transistor (MHEMT), are fabricated and demonstrated with depositing identical catalytic palladium metal. First, a 50 Å undoped GaAs cap layer is grown to prevent the Al0.24Ga0.76As Schottky layer from oxidizing and to reduce the Fermi level pinning effect. Second, the metamorphic buffer is used to accommodate the large lattice mismatch between the active layer and the GaAs substrate in order to obtain better carrier transport property. In accordance with these two structures, we exhibit a series of analyses of steady-state and transient response behaviors under hydrogen-containing atmospheres at different operating temperatures for practical hydrogen-sensing applications in the future.

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