石墨稀是只有一個碳原子厚度的二維材料，由於石墨稀的特殊碳鍵結，即便是單層石墨稀，原子、分子、離子是穿不透的，也已經被證明有極高的抗氧滲透的特性，也有很好的熱與化學穩定性。超薄(1 nm)石墨稀當積體電路銅內連線之擴散阻障層已被證實，其優異之阻障特性給了延續使用銅內連線之希望，因為1nm遠超越ITRS技術藍圖之要求，然而石墨稀優異之平面阻障特性並不意味著有3D阻障功能。本論文研究3D之銅薄膜表面是否可形成石墨稀及石墨稀於銅晶粒間之連續程度。
實驗結果顯示由於濺鍍之銅薄膜於高溫(900度C)退火時，銅晶粒成長相當不規則，銅表面呈現高低起伏極大之粗糙表面，石墨稀僅能在與平坦的SiO2交接之界面形成，銅薄膜上表面及側面退火後極為粗糙，TEM下找不到石墨稀之蹤影。另外，微影形成之銅線，因為高溫後de-wetting不規則，亦無法形成平滑之銅表面，因此亦未能達到石墨烯覆蓋銅線的目標石墨烯要能完整覆蓋在奈米之銅線上，未來仍有一段長遠的路需要努力。

Graphene, a two-dimensional allotrope of carbon atoms with a hexagonal lattice structure, is impermeable to atoms, molecules, and ions, even when it is a single layer. Strong oxidation resistance has been reported. One nanometer thin graphene as a Cu diffusion barrier layer had also been reported. The diffusion barrier performance of a 1-nm thick graphene is superior to any material studied and thickness also exceeds ITRS’s requirement. However, superior plane diffusion barrier performance does not mean its 3D performance in a real Cu interconnect. In this thesis, study of 3D graphene growth on sputtered Cu thin film has been carried out. Graphene growth in the junctions of Cu grain boundaries are observed. Preliminary results show that graphene grows only at the interface between Cu and SiO2 (substrate). No graphene was found in all other surfaces (side and top) because the Cu film became very rough after the 900C annealing which resulted in Cu grains growth. In addition, a lithography patterned Cu lines are not possible to grow continuous graphene because Cu surfaces are very rough due to uneven de-wetting during the annealing. The path to implement graphene as a diffusion barrier layer for IC Cu interconnect is still far away, it definite will need a lot more efforts in research.

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